We have studied the effect of low-intensity (I ∼ 1.2 × 105 cm−2 s−1) β radiation on the exfoliation of thin amorphous AlN films (with thicknesses on the order of 100 nm) from (100)-oriented silicon substrate as a result of scratching with a Berkovich pyramid at a linearly increasing load. It is established that AlN film beta-irradiated to a fluence of f = 2.16 × 1010 cm−2 exfoliates at about 10% lower load, while the lateral force acting upon the indenter decreases by about 40%. The obtained results can be used for improving the bonding technology and must be taken into account in assessment of the reliability of thin-film structures subjected to (intentional or accidental) electron irradiation.

β-Radiation-induced decrease of adhesion in AlN/Si structure

Regularities of changes in the mechanical properties (micro- or nanohardness, fracture toughness at indentation, and steady-state creep rate) and electrical characteristics (Hall constant, conductivity, and concentration of electrically active defects) of silicon single crystals under low-dose (F < 1012 cm–2) low-intensity (I ~ 106 cm–2∙s–1) beta-irradiation are described. The mechanism of nonmonotonic beta-induced softening of silicon is discussed.

A. A. Dmitrievskiy

Papers

Regularities of Changes in the Properties of Silicon Single Crystals under Low-Dose Beta-Irradiation