A. A. Semakova

Abstract: Photoluminescence of HgCdTe epitaxial films and nanostructures and electroluminescence of InAs(Sb,P) light-emitting diode (LED) nanoheterostructures were studied. For HgCdTe-based structures, the presence of compositional fluctuations, which localized charge carriers, was established. A model, which described the effect of the fluctuations on the rate of the radiative recombination, the shape of luminescence spectra and the position of their peaks, was shown to describe experimental photoluminescence data quite reasonably. For InAs(Sb,P) LED nanoheterostructures, at low temperatures (4.2–100 K) stimulated emission was observed. This effect disappeared with the temperature increasing due to the resonant ‘switch-on’ of the Auger process involving transition of a hole to the spin-orbit-splitted band. Influence of other Auger processes on the emissive properties of the nanoheterostructures was also observed. Prospects of employing II–VI and III–V nanostructures in light-emitting devices operating in the mid-infrared part of the spectrum are discussed.

TL;DR: In this paper, an active layer made of InAsSb films grown on InAs substrates was studied in the temperature range T = 4.2 −300 K and stimulated emission was observed with an optical cavity formed normal to the growth plane.

TL;DR: In this paper, the electroluminescence of InAs/InAsSbP and InAsSBS/InSBSP LED heterostructures with an optical cavity formed normal to the growth plane at wavelengths of 3.03 and 3.55 μm were studied.

TL;DR: In this article, the photoluminescence spectra of single-quantum-well HgCdTe-based structures and electroluminecence studies of multiplequantum well InAsSbbased structures are reported.

TL;DR: In this paper, the authors derived expressions for the Auger and radiative-recombination rates for materials with a band-gap width close to the spin-orbit splitting energy, which is the case for InAs, InAsSb solid solutions, etc.