Author
A. B. Khan
Bio: A. B. Khan is an academic researcher from Integral University. The author has contributed to research in topics: Quantum well laser & Quantum well. The author has an hindex of 1, co-authored 1 publications receiving 4 citations.
Papers
More filters
TL;DR: In this paper, the effects of variation of number of quantum wells in material gain characteristics and lasing wavelength of step index separately confined type-I InGaAsP/InP lasing nano-heterostructure for different carrier concentrations at room temperature in TE (Transverse Electric) mode of polarization.
Abstract: This paper reports the effects of variation of number of quantum wells in material gain characteristics and lasing wavelength of step index separately confined type-I InGaAsP/InP lasing nano-heterostructure for different carrier concentrations at room temperature in TE (Transverse Electric) mode of polarization. Peak material gain is found to be highest when the number of quantum well is one in the structure. However, for the case of 3QWs, 5QWs and 7QWs, it is almost same at a particular carrier density. Lasing wavelength at peak material gain considerably increases as the number of quantum well layers vary from single quantum well layer to three quantum well layers in the active region and after that it will remain almost same by any further increase in number of quantum wells for a particular carrier density. Furthermore, negative gain condition in the material gain spectra exists in the case of multiple quantum wells only at carrier concentration of 2×10 18 /cm 3 . The results suggest that the proposed nano-heterostructure is highly suitable as a light source in fiber optic links for long distance communication.
4 citations
Cited by
More filters
TL;DR: In this article, the authors reported the variation in optical gain that has been calculated for the different well width of AlGaN/GaN QW (quantum well) heterostructure.
3 citations
13 Sep 2021
TL;DR: In this paper, the impact of temperature on optical properties of InGaAs/GaAsSb/InAlAs nano-scale heterostructure which has been assumed to grow on GaAs substrate was reported.
Abstract: The present article reports the impact of temperature on optical properties of InGaAs/GaAsSb/InAlAs nano-scale heterostructure which has been assumed to grow on GaAs substrate. For this heterostructure, the optical properties such as optical gain and transition wavelength have been simulated under the variable temperature with the help of 6 band k.p approach. The outcomes of the calculations inform that the increased temperature can reduce the optical gain appreciably with the red shift in wavelength in near infrared (NIR) region.
2 citations
01 Jan 2019
TL;DR: In this article, the authors reported the existence of ultraviolet (UV) optical gain in AlN/AlGaN//AlN nanoscale heterostructure consisting of 50 nm quantum well of AlGaN material sandwiched between layers of AlN material.
Abstract: This paper reports the existence of ultraviolet (UV) optical gain in AlN/AlGaN/AlN nanoscale heterostructure consisting of 50 nm quantum well (QW) of AlGaN material sandwiched between layers of AlN material. The designed heterostructure is of type-I and assumed to be grown on GaN substrate. The optical gain of the heterostructure has been optimized utilizing k.p method. The simulation result shows that the peak optical gain in the AlGaN QW heterostructure lies at ~2400 A (UV region) of the order of ~760 cm, which proves the potentiality of the AlN/AlGaN/AlN heterostructure as a source of UV radiations.
1 citations
01 Jan 2010
TL;DR: InGaAsP/InP as mentioned in this paper is a combination of multiple-quantum-well (MQW) and FabryPerot (F-P) cladding.
Abstract: 我们制作 1.5 m InGaAsP/InP 隧道注射 multiple-quantum-well (TI-MQW ) FabryPerot (F-P ) 山脉激光。包括内部 cladding 层和 InP 隧道障碍层，激光 heterostructures 被金属器官的化学蒸汽的免职(MOCVD ) 种。在 20 点的 160 K 的典型温度 T0 ?????????? 贈 ?????????????? 雨 ? 雨？？
1 citations