A. D. D. Dwivedi

Bio: A. D. D. Dwivedi is an academic researcher from VIT University. The author has contributed to research in topics: Wafer & Renewable energy. The author has an hindex of 1, co-authored 1 publications receiving 4 citations.

Advances in high efficiency crystalline silicon homo junction solar cell technology

Abstract: Due to the high energy crisis all over the world, the use of renewable energy resources such as solar energy and wind energy are becoming more common all over the world. One of the most popular types of renewable energy is solar energy. The semiconductor device that converts sunlight (solar energy) into electricity is termed as Solar cell or photovoltaic (PV) cell. Photovoltaic cells with materials involving, mainly silicon in both crystalline and amorphous form, II-IV and III-V semiconductor materials and many other inorganic and organic materials are used in this industry. Among all these materials, crystalline Silicon (c-Si) is one of the most commonly used material for photovoltaic cells because of its abundance and non-toxicity and Silicon homojunctions are the building blocks of many microelectronics devices and standard crystalline silicon (c-Si) solar cells. In Silicon homo junction solar cell, the inability to absorb all the incident sunlight fundamentally limits the Si solar cell efficiency. Therefore, for single-junction devices, there is a theoretical limit for solar cell efficiency depending on the absorbing material, called the Shockley-Queisser limit. Other challenges involved in the use of silicon homo junction solar cells in the PV industry are their high manufacturing cost and lengthy manufacturing processes required for fabrication. To lower costs and increase efficiency many solution approaches such as –to reduce the number of processing steps involved in the manufacture of N-type PERT silicon solar cell, to improve the c-Si material quality, development of passivating layers to prevent surface recombination of carriers, development of metal contacts with low contact resistivity, texturing of c-Si wafer and deposition of ARC coating etc. have been proposed. This paper reviews the current methods designed and developed to achieve the high efficiency in crystalline Silicon Homo junction solar cells with low process cost.

Recent Issues and Configuration Factors in Perovskite-Silicon Tandem Solar Cells towards Large Scaling Production

Abstract: The unprecedented development of perovskite-silicon (PSC-Si) tandem solar cells in the last five years has been hindered by several challenges towards industrialization, which require further research. The combination of the low cost of perovskite and legacy silicon solar cells serve as primary drivers for PSC-Si tandem solar cell improvement. For the perovskite top-cell, the utmost concern reported in the literature is perovskite instability. Hence, proposed physical loss mechanisms for intrinsic and extrinsic instability as triggering mechanisms for hysteresis, ion segregation, and trap states, along with the latest proposed mitigation strategies in terms of stability engineering, are discussed. The silicon bottom cell, being a mature technology, is currently facing bottleneck challenges to achieve power conversion efficiencies (PCE) greater than 26.7%, which requires more understanding in the context of light management and passivation technologies. Finally, for large-scale industrialization of the PSC-Si tandem solar cell, the promising silicon wafer thinning, and large-scale film deposition technologies could cause a shift and align with a more affordable and flexible roll-to-roll PSC-Si technology. Therefore, this review aims to provide deliberate guidance on critical fundamental issues and configuration factors in current PSC-Si tandem technologies towards large-scale industrialization. to meet the 2031 PSC-Si Tandem road maps market target.

Computing Carrier Densities in Heterostructure Solar Cell with Gaussian Diffusion Length Profile

Abstract: Carrier densities in heterostructure solar cell are analytically computed by solving Poisson’s equation where diffusion length is approximated as Gaussian distribution The root cause of variable diffusion length estimation is that all the generated carriers within the depletion region can’t reach the external contact due to different loss mechanisms, and therefore a certain percentage can contribute to current Moreover, generated minority carriers are considered as a function of widths for both the material layers, and result is worked out under realistic considerations Variation of incident wavelength is measured on the carrier densities, and result is computed with that obtained for homojunction device These findings will help to compute current for quantum wellbased solar cell close to actual findings

Computing Photocurrent in Heterojunction Solar Cell with Gaussian Diffusion Profile

Abstract: The Photocurrent and corresponding net current in heterojunction solar cell is analytically computed considering variable diffusion length approximation, i.e., it is assumed that all the photogenerated carriers are not susceptible to contribute current owing to various internal scattering processes. It is also taken into account that generated minority carriers are function of depletion region widths, i.e., they have dependence on material properties. Results show variation of photocurrent on device width and incident wavelength, and are much higher when compared with homojunction device with equivalent dimensional configuration. Decrease in photocurrent with increasing wavelength suggests trapping is taken place through quantum well. Corresponding net current is computed as a function of leakage current. Findings are important for calculating figure of merit of the device.