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A. Declemy

Bio: A. Declemy is an academic researcher from University of Poitiers. The author has contributed to research in topics: Fluence & Ion implantation. The author has an hindex of 1, co-authored 1 publications receiving 23 citations.

Papers
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Journal ArticleDOI
TL;DR: In this article, the fraction of the implanted fluence used to pressurize blister cavities was deduced by combining experimental results with Finite Element Method (FEM) modeling.

34 citations


Cited by
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Journal ArticleDOI
TL;DR: In this paper, the microstructural changes induced by irradiation and subsequent annealing were investigated to assess the suitability of 6H-SiC as a structural material for nuclear applications.

62 citations

Journal ArticleDOI
TL;DR: The microstructure evolution of hydrogen-implanted 6H-SiC at different temperatures and fluences is investigated by using various experimental techniques in this article, where the authors found that both migration and coalescence are energetically cheaper in the case of H compared to He.

52 citations

Journal ArticleDOI
TL;DR: In this article, a single-crystalline semi-insulating 4H-SiC film on Si (100) substrate using the ion-cutting and layer transferring technique was demonstrated.

32 citations

Journal ArticleDOI
TL;DR: In this article, the effect of high-temperature helium irradiation on microstructural evolution of 3C-SiC wafers was investigated by the combination of Raman spectroscopy, conventional transmission electron microscopy (TEM) and high resolution transmission electron microscope (HRTEM).
Abstract: The effect of the high-temperature helium irradiation on microstructural evolution of 3C-SiC was investigated by the combination of Raman spectroscopy, conventional transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). 3C-SiC wafers were irradiated with 130 keV He+ ions at fluences of 2 × 1016 He+/cm2, 4 × 1016 He+/cm2 and 2 × 1017 He+/cm2 at 1000℃. Helium bubbles, dislocation loops, and their interaction with the stacking faults were focused on and characterized by TEM. Helium bubbles preferentially nucleate and grow on stacking faults. Bubble links on the (100) plane in 3C-SiC are formed. In addition, stacking faults can effectively trap irradiation-induced lattice defects to enhance their recovery. The type of irradiation-induced lattice defects and elemental distribution are also investigated. The research results are valuable for the 3C-SiC used in the advanced nuclear energy systems.

20 citations

Journal ArticleDOI
TL;DR: In this paper, the authors developed a mathematical method for the fundamental understanding of the deformation mechanisms in metallic multilayers subjected to radiation damage, where the cumulative strain within a layer is described as the combination of two contributions coming from the interfacial region and the inner region of the layers.

20 citations