A. E. Schmid

Bio: A. E. Schmid is an academic researcher. The author has contributed to research in topics: Dissipation & Cantilever. The author has an hindex of 1, co-authored 1 publications receiving 818 citations.

Energy dissipation in tapping-mode atomic force microscopy

Abstract: A method is presented to measure the energy dissipated by the tip–sample interaction in tapping-mode atomic force microscopy (AFM). The results show that if the amplitude of the cantilever is held constant, the sine of the phase angle of the driven vibration is then proportional to changes in the tip–sample energy dissipation. This means that images of the cantilever phase in tapping-mode AFM are closely related to maps of dissipation. The maximum dissipation observed for a 4 N/m cantilever with an initial amplitude of 25 nm tapping on a hard substrate at 74 kHz is about 0.3 pW.

Imaging Atomic Structure, Strain, and Disorder By Atomic Electron Tomography

Abstract: Knowledge of the atomic structure of materials is critical to understanding their functionality in many fields such as biology, microelectronics, condensed matter, and nanotechnology. Traditionally, x-ray crystallography has been the main method used to solve structures of all types. New techniques such as micro electron diffraction and single particle cryo electron microscopy are now utilizing electrons to study crystals that cannot be crystallized at the scales necessary for x-ray experiments. However, these techniques require ensembles of identical unit cells (like molecules or proteins) to solve the structure from a series of images or diffraction patterns. The need to average over many unit cells means that important material properties such as defects, dopants, and disorder are not captured. Investigations of unique arrangements of atoms requires a direct imaging method that does not rely on structural averaging or the assumption of crystallinity. Transmission electron microscopy (TEM) provides the ability to directly image atomic structure, and the development of powerful, stable aberration correctors in the last decade now routinely provide sub-Angstrom imaging resolution. Scanning TEM (STEM) has also become an effective method for measuring the atomic structure of inorganic materials based on so-called Z-contrast where the image intensities are proportional to the atomic number of the material being imaged. However, by their nature TEMs are limited to producing only two-dimensional projections of a structure. Electron tomography is a technique that can reconstruct the three-dimensional structure of unique nanoscale objects from a series of two-dimensional images acquired at different viewing angles. Tomography was traditionally limited to nanoscale resolution due to experimental difficulties and a lack of high-quality reconstruction algorithms. We have developed atomic electron tomography (AET) by utilizing the sub-Angstrom real-space resolution of STEM with advanced tomographic reconstruction algorithms to solve the structure of materials at the single atom level without averaging or the assumption of crystallinity. This talk will present recent progress and capabilities in the field of AET for reconstructing order and disorder in materials with 20 picometer precision. Our success in resolving chemical order/disorder in metallic FePt nanoparticles was extended to include the time domain by capturing nucleation and growth or ordered phases in the same nanoparticle. Also, the ability to reconstruct atomic structure without the need for averaging or crystallinity led to the achievement of directly imaging three-dimensional atomic arrangements in amorphous solids. We determined the chemical and structural disorder of an eight-element metallic glass to quantitatively characterize short- and medium-range order, and we determined the disordered atomic packing of monatomic amorphous materials. The field of electron microscopy is rapidly changing with the advent of improved detectors, aberration correctors, and monochromators. We are exploring the use of these new hardware to implement new imaging algorithms such as ptychography to allow AET to explore all new classes of materials especially lightly scattering materials like oxygen. We have also established the Materials Databank to share experimentally determined 3D atomic structures with other scientists. As more structures and classes of materials are solved, we expect AET to become an important technique in the field of atomic structural characterization.

Steady-state junction current distribution in p-n GaN diodes measured using low-energy electron microscopy (LEEM)

Abstract: We report on the measurement of the lateral distribution of the junction current of an electrical biased p-n GaN diode by electron emission microscopy using a low-energy electron microscope. The vacuum level at the surface of the diode was lowered by deposition of cesium to achieve negative electron affinity, allowing overflow electrons at the surface of the biased diodes to be emitted and their spatial distribution imaged. The results were compared to the literature, and a good match with analytical solutions by Joyce and Wemple [J. Appl. Phys. 41, 3818 (1970)] was obtained.

Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation

Abstract: Unencapsulated, exfoliated black phosphorus (BP) flakes are found to chemically degrade upon exposure to ambient conditions. Atomic force microscopy, electrostatic force microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy are employed to characterize the structure and chemistry of the degradation process, suggesting that O2 saturated H2O irreversibly reacts with BP to form oxidized phosphorus species. This interpretation is further supported by the observation that BP degradation occurs more rapidly on hydrophobic octadecyltrichlorosilane self-assembled monolayers and on H-Si(111) versus hydrophilic SiO2. For unencapsulated BP field-effect transistors, the ambient degradation causes large increases in threshold voltage after 6 h in ambient, followed by a ∼103 decrease in FET current on/off ratio and mobility after 48 h. Atomic layer deposited AlOx overlayers effectively suppress ambient degradation, allowing encapsulated BP FETs to ma...

Hybrid zinc oxide conjugated polymer bulk heterojunction solar cells.

Abstract: Bulk heterojunction photovoltaic devices based on blends of a conjugated polymer poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) as electron donor and crystalline ZnO nanoparticles (nc-ZnO) as electron acceptor have been studied. Composite nc-ZnO:MDMO-PPV films were cast from a common solvent mixture. Time-resolved pump-probe spectroscopy revealed that a photoinduced electron transfer from MDMO-PPV to nc-ZnO occurs in these blends on a sub-picosecond time scale and produces a long-lived (milliseconds) charge-separated state. The photovoltaic effect in devices, made by sandwiching the active nc-ZnO:MDMO-PPV layer between charge-selective electrodes, has been studied as a function of the ZnO concentration and the thickness of the layer. We also investigated changing the degree and type of mixing of the two components through the use of a surfactant for ZnO and by altering the size and shape of the nc-ZnO particles. Optimized devices have an estimated AM1.5 performance of 1.6% with incident photon to current conversion efficiencies up to 50%. Photoluminescence spectroscopy, atomic force microscopy, and transmission electron microscopy have been used to gain insight in the morphology of these blends.