Author
A. F. Tsatsul’nikov
Other affiliations: Technical University of Berlin, Saint Petersburg State University of Information Technologies, Mechanics and Optics
Bio: A. F. Tsatsul’nikov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum dot & Photoluminescence. The author has an hindex of 28, co-authored 224 publications receiving 3388 citations. Previous affiliations of A. F. Tsatsul’nikov include Technical University of Berlin & Saint Petersburg State University of Information Technologies, Mechanics and Optics.
Papers published on a yearly basis
Papers
More filters
TL;DR: In this article, the authors used the concept of electronically-coupled quantum dots (QDs) and oxide-defined 10 μm apertures for surface-emitting QD lasers (300 K).
213 citations
TL;DR: In this article, a model of self-organized quantum dots overgrown with an InGa(Al)As alloy layer is investigated as a means to control the structural and electronic properties.
Abstract: Strain-driven decomposition of an alloy layer is investigated as a means to control the structural and electronic properties of self-organized quantum dots. Coherent InAs/GaAs islands overgrown with an InGa(Al)As alloy layer serve as a model system. Cross-section and plan-view transmission electron microscopy as well as photoluminescence (PL) studies consistently indicate an increase in height and width of the island with increasing indium content and/or thickness of the alloy layer. The increasing island size is attributed to the phase separation of the alloy layer driven by the surface strain introduced by the initial InAs islands. The decomposition is enhanced by the addition of aluminum to the alloy layer. The ground-state transition energy in such quantum dots is significantly (up to 200 meV) redshifted compared to the original InAs/GaAs quantum dots, allowing to reach the 1.3 \ensuremath{\mu}m spectral region maintaining the high PL efficiency and the low defect density typical for Stranski-Krastanow growth. The possibility of degradation less stacking of such quantum dot layers enables injection lasing on the ground-state transition with a differential efficiency of 57% and a continuous-wave output power of 2.7 W.
196 citations
TL;DR: In this paper, low threshold current density (Jth = 65 A/cm2) operation near 1.3 µm at room temperature (RT) was realized for lasers using InAs/InGaAs/GaAs quantum dots (QDs).
Abstract: Low threshold current density (Jth = 65 A/cm2) operation near 1.3 µm at room temperature (RT) is realised for lasers using InAs/InGaAs/GaAs quantum dots (QDs). The lasing occurs via the QD ground state for cavity length L > 1 mm. The differential efficiency is 40% and internal losses are 1.5 cm–1. The characteristic temperature near RT is 160 K.
129 citations
TL;DR: An InAs quantum dot array covered by a thin InGaAs layer was used as the active region of diode lasers grown by molecular beam epitaxy on GaAs substrates as mentioned in this paper.
Abstract: An InAs quantum dot (QD) array covered by a thin InGaAs layer was used as the active region of diode lasers grown by molecular beam epitaxy on GaAs substrates. The wavelength of the ground-state transition in such heterostructures is in the 1.3 μm range. In the laser based on the single layer of QDs, lasing proceeds via the excited states due to insufficient gain of the ground level. Stacking of three QD planes prevents gain saturation and results in a low threshold (85 A/cm2 in broad-area 1.9-mm-long stripe) long-wavelength (1.25 μm) lasing at room temperature via the QD ground state with relatively high differential efficiency (>50%).
122 citations
TL;DR: In this article, a resonant photoluminescence (PL) of InGaN inclusions in a GaN matrix was reported, where the structures were grown on sapphire substrates using metal-organic chemical vapor deposition.
Abstract: We report on resonant photoluminescence (PL) of InGaN inclusions in a GaN matrix. The structures were grown on sapphire substrates using metal-organic chemical vapor deposition. Nonresonant pulsed excitation results in a broad PL peak, while resonant excitation into the nonresonant PL intensity maximum results in an evolution of a sharp resonant PL peak, having a spectral shape defined by the excitation laser pulse and a radiative decay time close to that revealed for PL under nonresonant excitation. Observation of a resonantly excited narrow PL line gives clear proof of the quantum dot nature of luminescence in InGaN-GaN samples. PL decay demonstrates strongly nonexponential behavior evidencing coexistence of quantum dots having similar ground-state transition energy, but very different electron-hole wave-function overlap.
106 citations
Cited by
More filters
TL;DR: Bergh and P.J.Dean as discussed by the authors proposed a light-emitting diode (LEDD) for light-aware Diodes, which was shown to have promising performance.
Abstract: Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.
1,560 citations
TL;DR: In this article, a review highlights the recent progress of the state-of-the-art research on synthesis, characterization and isolation of single and few layer nanosheets and their assembly.
1,090 citations
TL;DR: In this paper, the authors focus on recent progress in advanced nanostructured materials (NSMs) as building blocks for EEDs (such as fuel cells, supercapacitors, and Li-ion batteries) based on investigations at the 0D, 1D, 2D and 3D NSMs.
845 citations
TL;DR: In a wider sense, ionic liquids are molten salts that melt below 100 degrees C and give access to a number of elements that cannot be electrodeposited from aqueous solutions, such as the light and refractory metals, as well as elemental and compound semiconductors.
Abstract: In a wider sense, ionic liquids are molten salts that melt below 100 °C. As their name suggests, they are solely composed of ions and many combinations of organic and/or inorganic cations and anions exist. Depending on the systems they can reach electrochemical windows of more than 4 V and thus they give access to a number of elements that cannot be electrodeposited from aqueous solutions, such as the light and refractory metals, as well as elemental and compound semiconductors. Presumably, ionic liquids will become important for electrochemical nanotechnology.
637 citations
TL;DR: The InGaAs-GaAs QD emission can be tuned between 0.95 /spl mu/m and 1.37 /spl middot/cm/sup -2/m at 300 K as mentioned in this paper.
Abstract: Quantum-dot (QD) lasers provide superior lasing characteristics compared to quantum-well (QW) and QW wire lasers due to their delta like density of states. Record threshold current densities of 40 A/spl middot/cm/sup -2/ at 77 K and of 62 A/spl middot/cm/sup -2/ at 300 K are obtained while a characteristic temperature of 385 K is maintained up to 300 K. The internal quantum efficiency approaches values of /spl sim/80 %. Currently, operating QD lasers show broad-gain spectra with full-width at half-maximum (FWHM) up to /spl sim/50 meV, ultrahigh material gain of /spl sim/10/sup 5/ cm/sup -1/, differential gain of /spl sim/10/sup -13/ cm/sup 2/ and strong nonlinear gain effects with a gain compression coefficient of /spl sim/10/sup -16/ cm/sup 3/. The modulation bandwidth is limited by nonlinear gain effects but can be increased by careful choice of the energy difference between QD and barrier states. The linewidth enhancement factor is /spl sim/0.5. The InGaAs-GaAs QD emission can be tuned between 0.95 /spl mu/m and 1.37 /spl mu/m at 300 K.
512 citations