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A.G.M. Das
Researcher at Monash University, South Africa campus
Publications - 9
Citations - 36
A.G.M. Das is an academic researcher from Monash University, South Africa campus. The author has contributed to research in topics: Deep-level transient spectroscopy & Doping. The author has an hindex of 4, co-authored 9 publications receiving 34 citations.
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Journal ArticleDOI
A study of the T2 defect and the emission properties of the E3 deep level in annealed melt grown ZnO single crystals
Wilbert Mtangi,Matthias Schmidt,F.D. Auret,Walter E. Meyer,P.J. Janse van Rensburg,Mmantsae Diale,Jackie M. Nel,A.G.M. Das,Francis Chi-Chung Ling,Albert Chawanda +9 more
TL;DR: In this paper, the authors report on the space charge spectroscopy studies performed on thermally treated melt-grown single crystal ZnO, where the samples were annealed in different ambients at 700 °C and also in oxygen ambient at different temperatures.
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A study of the dependence of electron-induced defects on the doping impurity density in n-type germanium by deep-level transient spectroscopy (DLTS)
TL;DR: In this paper, the electrical characteristics of electron irradiation-induced defects in n-type (1, 1, 0), (1, 1, 1) and germanium doped with antimony (Sb) were measured using DLTS and Laplace-DLTS.
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A comparative study of electronic properties of the defects introduced in p-Si: (i) During electron beam deposition of Ti/Mo, (ii) by proton irradiation, and (iii) by electron irradiation
TL;DR: The electronic properties of defects introduced unintentionally, during electron beam deposition (EBD) of Ti and Mo on Cz grown, B-doped Si and those deliberately introduced by proton and electron irradiation are presented in this article.
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Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation
TL;DR: In this paper, deep level transient spectroscopy (DLTS) and Laplace-DLTS have been used to investigate the defects created in Sb doped Ge after irradiation with 2-MeV protons having a fluence of 1×1013-protons/cm2.
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Thermal stability of Ti/Mo schottky contacts on p-Si and defects introduced in p-Si during electron beam deposition of Ti/Mo
TL;DR: In this paper, the authors investigated the thermal stability (in the range 100 oC - 900 oC) of defects introduced in p-Si by electron beam deposition (EBD) of Ti and Ti/Mo Schottky contacts.