A.L. Allred

Bio: A.L. Allred is an academic researcher from Harvard University. The author has contributed to research in topics: Electronegativity & Formal charge. The author has an hindex of 1, co-authored 1 publications receiving 851 citations.

Conceptual density functional theory.

Abstract: I. Introduction: Conceptual vs Fundamental andComputational Aspects of DFT1793II. Fundamental and Computational Aspects of DFT 1795A. The Basics of DFT: The Hohenberg−KohnTheorems1795B. DFT as a Tool for Calculating Atomic andMolecular Properties: The Kohn−ShamEquations1796C. Electronic Chemical Potential andElectronegativity: Bridging Computational andConceptual DFT1797III. DFT-Based Concepts and Principles 1798A. General Scheme: Nalewajski’s ChargeSensitivity Analysis1798B. Concepts and Their Calculation 18001. Electronegativity and the ElectronicChemical Potential18002. Global Hardness and Softness 18023. The Electronic Fukui Function, LocalSoftness, and Softness Kernel18074. Local Hardness and Hardness Kernel 18135. The Molecular Shape FunctionsSimilarity 18146. The Nuclear Fukui Function and ItsDerivatives18167. Spin-Polarized Generalizations 18198. Solvent Effects 18209. Time Evolution of Reactivity Indices 1821C. Principles 18221. Sanderson’s Electronegativity EqualizationPrinciple18222. Pearson’s Hard and Soft Acids andBases Principle18253. The Maximum Hardness Principle 1829IV. Applications 1833A. Atoms and Functional Groups 1833B. Molecular Properties 18381. Dipole Moment, Hardness, Softness, andRelated Properties18382. Conformation 18403. Aromaticity 1840C. Reactivity 18421. Introduction 18422. Comparison of Intramolecular ReactivitySequences18443. Comparison of Intermolecular ReactivitySequences18494. Excited States 1857D. Clusters and Catalysis 1858V. Conclusions 1860VI. Glossary of Most Important Symbols andAcronyms1860VII. Acknowledgments 1861VIII. Note Added in Proof 1862IX. References 1865

Thermal decomposition of the non-interstitial hydrides for the storage and production of hydrogen.

Abstract: This review focuses on key aspects of the thermal decomposition of multinary or mixed hydride materials, with a particular emphasis on the rational control and chemical tuning of the strategically important thermal decomposition temperature of such hydrides, Tdec. An attempt is also made to predict the thermal stability of as-yet unknown, elusive or even unknown hydrides. The future of a particularly promising class of materials for hydrogen storage, namely the catalytically enhanced complex metal hydrides, is discussed. The predictions are supported by thermodynamics considerations, calculations derived from molecular orbital (MO) theory and backed up by simple chemical insights and intuition.

Chemical reactivity indexes in density functional theory

Abstract: The theoretical description of charge distribution, and related properties, such as chemical reactivity descriptors of chemical compounds, has greatly benefited from the development of density functional theory (DFT) methods. Indeed, most concepts stemmed from DFT but, up to now, they have been used mostly within semiempirical MO methods, Hartree–Fock, or post-Hartree–Fock methods. During the last decade, however, DFT has enabled theoretical chemistry to predict accurately structures and energetics of clusters and molecules. Therefore, more attention should also now be paid to these reactivity descriptors determined directly from DFT calculations. In this work, chemical reactivity is explored in DFT through a functional Taylor expansion of energy that introduces various energy derivatives of chemical significance. This review summarizes their main features and examines the limitations of some indexes presently used for the characterization of reactivity. Also, several perspectives are given. © 1999 John Wiley & Sons, Inc. J Comput Chem 20: 129–154, 1999

The physics and chemistry of the Schottky barrier height

Abstract: The formation of the Schottky barrier height (SBH) is a complex problem because of the dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface. Existing models of the SBH are too simple to realistically treat the chemistry exhibited at MS interfaces. This article points out, through examination of available experimental and theoretical results, that a comprehensive, quantum-mechanics-based picture of SBH formation can already be constructed, although no simple equations can emerge, which are applicable for all MS interfaces. Important concepts and principles in physics and chemistry that govern the formation of the SBH are described in detail, from which the experimental and theoretical results for individual MS interfaces can be understood. Strategies used and results obtained from recent investigations to systematically modify the SBH are also examined from the perspective of the physical and chemical principles of the MS interface.