Author
A.N. Daw
Bio: A.N. Daw is an academic researcher. The author has an hindex of 1, co-authored 1 publications receiving 2 citations.
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TL;DR: In this article, a three-layer Pd/Ru/Au electrolessly deposited ohmic contact to p-InGaAs, suitable for use in a self-aligned process, was presented.
Abstract: A three-layer Pd/Ru/Au electrolessly deposited ohmic contact to p-InGaAs, suitable for use in a self-aligned process, is presented. Cross-sectional transmission electron microscopy shows that the electrolessly plated metal layers are dense with a thin uniform reaction between the Pd and InGaAs. This contact metallization remains shallow and electrically stable even after aging for 4 h at 250°C. An average specific contact resistance of (1.6 ± 0.6) × 10 -6 Ω cm 2 was obtained for as-deposited contacts with an HCl surface treatment. When a UV ozone and NH 4 OH surface treatment was used, specific contact resistances as low as (2.1 ± 0.9) X 10 -7 Ω cm 2 were obtained.
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