A.S. Clorfeine

Bio: A.S. Clorfeine is an academic researcher from Princeton University. The author has contributed to research in topics: Monolithic microwave integrated circuit & Diode. The author has an hindex of 1, co-authored 1 publications receiving 11 citations.

Basic Principles and Properties of Avalanche Transit-Time Devices

Abstract: The basic principles and characteristics of the various modes of operation of avalanche transit-time devices are presented. Theoretical and experimental results are also presented in order to indicate the present state of development and the kind of performance which has been achieved in these devices.

Frequency conversion in IMPATT diodes

Abstract: A large-signal model of the Read-type IMPATT diode has been used to analyze the frequency-mixing properties of the oscillating diode. The self-oscillating, two-port frequency converter is described in terms of its short-circuit admittance parameters. It is shown that in the proper circuit, parametric frequency conversion may result in a negative conductance at the input and output ports of the converter. Therefore, high-gain frequency conversion and parametric amplification are possible. Under some conditions, spurious oscillations may occur due to this negative conductance. Experimental circuits have been built which demonstrate conversion gain and parametric amplification and confirm qualitatively the theoretical results. It is also shown experimentally that some of the sideband noise of the IMPATT oscillator is due to low-frequency noise which is up converted from the bias circuit. Some of this noise can be eliminated by proper circuit design.

Noise in avalanche transit-time devices

Abstract: The work performed on noise in avalanche transit-time devices is reviewed and presented in detail. Both theoretical and experimental results on the noise mechanisms and performance of these devices when employed as oscillators, amplifiers, and self-oscillating mixers are included. Suggestions for further studies in this area are also given.

Subharmonic generation and the trapped-plasma mode in avalanching silicon p + -n-n + junctions

Abstract: Experimental evidence is presented which distinguishes two mechanisms whereby an avalanche diode can efficiently generate microwaves at transit angles below those of classical transit-time oscillations. Measurements of external current waveforms and subsequent calculations of terminal voltage waveforms demonstrated that efficient generation (η ∼10 percent) of microwaves was possible at sub-harmonics of transit-time excitations. This subharmonic generation occurred when various harmonic components interacted such that the peak total voltage was delayed with respect to the fundamental. In such cases of multiharmonic synergetic excitations, the peak displacement currents were less than 0.25 of that required for avalanche shock-front initiation. The distinguishing features of high-efficiency operation (η ∼50 percent) were found to be completely consistent with a trapped-plasma mode interpretation. Experimental external current and dV/dt waveforms have substantiated Evans' circuit analysis [28]. dV/dt waveforms indicated peak displacement currents at breakdown which were on the order of 1.5 times that required for shock-front initiation. Approximate conduction current waveforms exhibited larger currents during the shock-front transit than during the extraction period. General features were consistent with calculations made by Cottam [29]. Circuit characteristics for both subharmonic generation and the trapped-plasma mode were similar. Circuit analysis also indicated the critical importance of each separate harmonic of a trapped-plasma mode fundamental. Harmonic generation utilizing the trapped-plasma mode enabled an extension of the upper bound of the frequency of efficient generation.

Resonance and parametric effects in IMPATT diodes

Abstract: The theory of nonlinear fundamental and subharmonic resonances in the avalanche region of IMPATT diodes is developed by use of the method of harmonic balance. Due to the high resonance strength of the subharmonic mode, and as a consequence of large-signal parametric interaction, the negative resistance of the diode is markedly increased at the presence of a self-pumped oscillation of twice the frequency of the fundamental mode, especially for low-transit angles across the drift region.