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A. S. Roy
Researcher at Intel
Publications - 37
Citations - 840
A. S. Roy is an academic researcher from Intel. The author has contributed to research in topics: Flicker noise & Transistor. The author has an hindex of 15, co-authored 37 publications receiving 778 citations. Previous affiliations of A. S. Roy include École Polytechnique Fédérale de Lausanne.
Papers
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Journal ArticleDOI
A Design Oriented Charge-based Current Model for Symmetric DG MOSFET and its Correlation with the EKV Formalism
Jean-Michel Sallese,Francois Krummenacher,Fabien Prégaldiny,Christophe Lallement,A. S. Roy,Christian Enz +5 more
TL;DR: In this article, a charge-based model for undoped DG MOSFETs under symmetrical operation is proposed, which aims at giving a comprehensive understanding of the device from the design strategy.
Proceedings Article
Compact Modeling of Thermal Noise in the MOS Transistor
A. S. Roy,Christian Enz +1 more
TL;DR: A new, completely analytical thermal noise model based on consistent physical assumptions for MOS transistors is presented.
Journal ArticleDOI
Compact modeling of thermal noise in the MOS transistor
A. S. Roy,Christian Enz +1 more
TL;DR: In this paper, the authors present a new, completely analytical thermal noise model based on consistent physical assumptions, including the absence of carrier heating, incorrect modeling of velocity saturation effect, wrong modeling of diffusivity, etc.
Journal ArticleDOI
Best Practices for Compact Modeling in Verilog-A
Colin C. McAndrew,Geoffrey Coram,Kiran Kumar Gullapalli,J. Robert Jones,Laurence W. Nagel,A. S. Roy,Jaijeet Roychowdhury,Andries J. Scholten,G.D.J. Smit,Xufeng Wang,Sadayuki Yoshitomi +10 more
TL;DR: Best practices for writing compact models in Verilog-A are detailed to try to help raise the quality of compact modeling throughout the industry.
Proceedings ArticleDOI
22FFL: A high performance and ultra low power FinFET technology for mobile and RF applications
Sell Bernhard,B. Bigwood,S. Cha,Zhanping Chen,P. Dhage,Pengyu Fan,M. Giraud-Carrier,Ayan Kar,Eric Karl,Ku Chieh-Jen,Ranjith Kumar,Lajoie Travis W,H.-J. Lee,Guannan Liu,S. Liu,Yunzhe Ma,S. Mudanai,L. Nguyen,L. Paulson,K. Phoa,K. Pierce,A. S. Roy,R. Russell,J. Sandford,J. Stoeger,Nikola Stojanovic,A. Sultana,James Waldemer,J. Wan,W. Xu,Dale Young,Jingyan Zhang,Yuegang Zhang,P. Bai +33 more
TL;DR: A FinFET technology named 22FFL has been developed that combines high-performance, ultra-low power logic and RF transistors as well as single-pattern backend flow for the first time to create a new 6T low-leakage SRAM with bit cell leakage of sub 1pA/cell.