A
A.V. Voitsekhovsky
Researcher at Tomsk State University
Publications - 6
Citations - 57
A.V. Voitsekhovsky is an academic researcher from Tomsk State University. The author has contributed to research in topics: Epitaxy & Molecular beam epitaxy. The author has an hindex of 4, co-authored 6 publications receiving 47 citations.
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Journal ArticleDOI
Optical and electrical studies of arsenic–implanted HgCdTe films grown with molecular beam epitaxy on GaAs and Si substrates
I. I. Izhnin,A.V. Voitsekhovsky,A. G. Korotaev,O. I. Fitsych,A. Yu. Bonchyk,H. V. Savytskyy,K. D. Mynbaev,K. D. Mynbaev,V. S. Varavin,Sergey A. Dvoretsky,Sergey A. Dvoretsky,Nikolay N. Mikhailov,M. V. Yakushev,Rafal Jakiela +13 more
TL;DR: A defect study was performed on arsenic-implanted Hg 1-x Cd x Te (x ǫ = 0.23-0.30) films with graded-gap surface layers, grown with molecular-beam epitaxy on GaAs and Si substrates and designed for fabrication of p + -n-type photodiodes.
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Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis
I. I. Izhnin,K. D. Mynbaev,A.V. Voitsekhovsky,A. G. Korotaev,Ihor I. Syvorotka,O. I. Fitsych,V. S. Varavin,S. A. Dvoretsky,N. N. Mikhailov,V. G. Remesnik,M. V. Yakushev,Z. Swiatek,Jerzy Morgiel,O. Yu. Bonchyk,H. V. Savytskyy +14 more
TL;DR: In this paper, the authors used mobility spectrum analysis (MSA) to extract parameters of different carrier species and identify specific donor defects in a HgCdTe film by implantation of arsenic ions.
Journal ArticleDOI
Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis
I. I. Izhnin,Ihor I. Syvorotka,O. I. Fitsych,V. S. Varavin,S. A. Dvoretsky,D. V. Marin,N. N. Mikhailov,V. G. Remesnik,M. V. Yakushev,K. D. Mynbaev,A.V. Voitsekhovsky,A. G. Korotaev +11 more
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Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs
I. I. Izhnin,A. I. Izhnin,K. D. Mynbaev,N. L. Bazhenov,A. V. Shilyaev,N. N. Mikhailov,V. S. Varavin,S. A. Dvoretsky,O. I. Fitsych,A.V. Voitsekhovsky +9 more
TL;DR: In this article, the photoluminescence of HgCdTe-based hetero-epitaxial nanostructures with 50 to 1100 nm-wide potential wells was studied.
Journal ArticleDOI
Background donor concentration in HgCdTe
I. I. Izhnin,K. D. Mynbaev,A.V. Voitsekhovsky,A. G. Korotaev,O. I. Fitsych,M. Pociask−Bialy,S. A. Dvoretsky +6 more
TL;DR: In this article, the background donor concentration (BDC) in HgCdTe samples grown with different types of technology were performed with the use of ion milling as a means of eliminating the compensating acceptors.