Abubakkar Siddik

Bio: Abubakkar Siddik is an academic researcher from Cooch Behar Panchanan Barma University. The author has contributed to research in topics: Resistive random-access memory & Flexible electronics. The author has an hindex of 2, co-authored 3 publications receiving 14 citations.

Nonvolatile resistive switching and synaptic characteristics of lead-free all-inorganic perovskite-based flexible memristive devices for neuromorphic systems

Abstract: Recently, several types of lead halide perovskites have been actively researched for resistive switching (RS) memory or artificial synaptic devices due to their current–voltage hysteresis along with the feasibility of fabrication, low-temperature processability and superior charge mobility. However, the toxicity and environmental pollution potential of lead halide perovskites severely restrict their large-scale commercial prospects. In the present work, the environmentally friendly and uniform CsSnCl3 perovskite films are introduced to act as an active layer in the flexible memristors. Ag/CsSnCl3/ITO devices demonstrate bipolar RS with excellent electrical properties such as forming free characteristics, good uniformity, low operating voltages, a high ON/OFF ratio (102) and a long retention time (>104 s). The RS mechanism has been well explained in the outline of electric field-induced formation and rupture of Ag filaments in the CsSnCl3 layer. The metallic nature of the conducting filament has been further confirmed by temperature-dependent variation of low and high resistance states. Additionally, various pulse measurements have been carried out to mimic some of the basic synaptic functions including postsynaptic current, paired-pulse facilitation, long-term potentiation and long-term depression under normal as well as bending conditions. Our work provides the opportunity for exploring artificial synapses based on lead-free halide perovskites for the development of next-generation flexible electronics.

Enhancement of data storage capability in a bilayer oxide-based memristor for wearable electronic applications

Abstract: In this work, a ZnO/NiO bilayer architecture is introduced to fabricate transparent and flexible resistive random access memory (RRAM) device (Cu/ZnO/NiO/ITO) on polyethylene terephthalate (PET) substrate. The device exhibits excellent RS characteristics, such as forming free characteristic, low operating voltages, outstanding uniformity, long retention time (>104 s), high ON/OFF current ratio ~103, reliable multilevel cell (MLC) characteristics and excellent mechanical flexibility. The multilevel properties has been systematically evaluated by varying the compliance current and by tuning the stopping voltage, which shows that all the resistance state are distinguishable and remained stable without any considerable deprivation over 103 s. Intrinsic tailoring of RS mechanism has been well explained in the framework of electric field-induced formation and rupture of the reproducible Cu filaments in ZnO/NiO layer. Further, the metallic nature of conducting filament has further been confirmed by temperature-dependent variation of the high and low resistance states. Owing to the increasing demand of flexible electronics, the mechanical robustness of the proposed device has been examined by varying bending time and radius. The present RS device shows potential toward integration in many transparent, flexible and high-density storage devices, such as electronic skins and flexible displays.

Recent Advances in Halide Perovskite-Based Nonvolatile Resistive Random-Access Memory

Abstract: Nonvolatile resistive random-access memory devices have emerged as a potential entrant for future-generation memory technology due to their fast switching operation, low power consumption, and multibit storage capability. Among them, halide perovskite (HP)-based resistive random-access memory (RRAM) devices are considered to represent a new class of data storage devices because of the excellent switching features of HP materials. Compared with conventional, charge-based memory devices, the virtues of RRAM devices include multilevel data storage capability, smaller size, and lower energy per bit (~ fJ/bit). Although many investigations have been performed on switching materials, the analysis of HPs as switching material for RRAM devices is still in the early research stages. Herein, recent progress on HP-based RRAM devices is extensively and systematically summarized. Firstly, the conducting filament-based switching mechanism is introduced, then various aspects of RRAM devices based on different HPs are discussed. Also, the significance and recent advances of RRAM to human-brain-like artificial synaptic systems are introduced briefly. Finally, a brief conclusion is given on the development and challenges of HP-based RRAMs.

Nanostructured perovskites for nonvolatile memory devices.

Abstract: Perovskite materials have driven tremendous advances in constructing electronic devices owing to their low cost, facile synthesis, outstanding electric and optoelectronic properties, flexible dimensionality engineering, and so on. Particularly, emerging nonvolatile memory devices (eNVMs) based on perovskites give birth to numerous traditional paradigm terminators in the fields of storage and computation. Despite significant exploration efforts being devoted to perovskite-based high-density storage and neuromorphic electronic devices, research studies on materials' dimensionality that has dominant effects on perovskite electronics' performances are paid little attention; therefore, a review from the point of view of structural morphologies of perovskites is essential for constructing perovskite-based devices. Here, recent advances of perovskite-based eNVMs (memristors and field-effect-transistors) are reviewed in terms of the dimensionality of perovskite materials and their potentialities in storage or neuromorphic computing. The corresponding material preparation methods, device structures, working mechanisms, and unique features are showcased and evaluated in detail. Furthermore, a broad spectrum of advanced technologies (e.g., hardware-based neural networks, in-sensor computing, logic operation, physical unclonable functions, and true random number generator), which are successfully achieved for perovskite-based electronics, are investigated. It is obvious that this review will provide benchmarks for designing high-quality perovskite-based electronics for application in storage, neuromorphic computing, artificial intelligence, information security, etc.

Nonvolatile resistive switching and synaptic characteristics of lead-free all-inorganic perovskite-based flexible memristive devices for neuromorphic systems

Abstract: Recently, several types of lead halide perovskites have been actively researched for resistive switching (RS) memory or artificial synaptic devices due to their current–voltage hysteresis along with the feasibility of fabrication, low-temperature processability and superior charge mobility. However, the toxicity and environmental pollution potential of lead halide perovskites severely restrict their large-scale commercial prospects. In the present work, the environmentally friendly and uniform CsSnCl3 perovskite films are introduced to act as an active layer in the flexible memristors. Ag/CsSnCl3/ITO devices demonstrate bipolar RS with excellent electrical properties such as forming free characteristics, good uniformity, low operating voltages, a high ON/OFF ratio (102) and a long retention time (>104 s). The RS mechanism has been well explained in the outline of electric field-induced formation and rupture of Ag filaments in the CsSnCl3 layer. The metallic nature of the conducting filament has been further confirmed by temperature-dependent variation of low and high resistance states. Additionally, various pulse measurements have been carried out to mimic some of the basic synaptic functions including postsynaptic current, paired-pulse facilitation, long-term potentiation and long-term depression under normal as well as bending conditions. Our work provides the opportunity for exploring artificial synapses based on lead-free halide perovskites for the development of next-generation flexible electronics.

Towards engineering in memristors for emerging memory and neuromorphic computing: A review

Abstract: Resistive random-access memory (RRAM), also known as memristors, having a very simple device structure with two terminals, fulfill almost all of the fundamental requirements of volatile memory, nonvolatile memory, and neuromorphic characteristics. Its memory and neuromorphic behaviors are currently being explored in relation to a range of materials, such as biological materials, perovskites, 2D materials, and transition metal oxides. In this review, we discuss the different electrical behaviors exhibited by RRAM devices based on these materials by briefly explaining their corresponding switching mechanisms. We then discuss emergent memory technologies using memristors, together with its potential neuromorphic applications, by elucidating the different material engineering techniques used during device fabrication to improve the memory and neuromorphic performance of devices, in areas such as ION/IOFF ratio, endurance, spike time-dependent plasticity (STDP), and paired-pulse facilitation (PPF), among others. The emulation of essential biological synaptic functions realized in various switching materials, including inorganic metal oxides and new organic materials, as well as diverse device structures such as single-layer and multilayer hetero-structured devices, and crossbar arrays, is analyzed in detail. Finally, we discuss current challenges and future prospects for the development of inorganic and new materials-based memristors.

Multilevel Programming and Light-Assisted Resistive Switching in a Halide-Tunable All-Inorganic Perovskite Cube for Flexible Memory Devices

Abstract: All-inorganic halide perovskites CsPbX3 (X = Cl, Br or I) have transpired to be utilized in several optoelectronic devices owing to their multifaceted optical and electrical features and superior t...

Halide Perovskites for Resistive Switching Memory.

Abstract: Resistive switching random access memory (RRAM), also known as memristor, is regarded as an emerging nonvolatile memory and computing-in-memory technology to address the intrinsic physical limitations of conventional memory and the bottleneck of von Neumann architecture. In particular, halide perovskite RRAMs have attracted widespread attention in recent years because of their ionic migration nature and excellent photoelectric properties. This Perspective first provides a condensed overview of halide perovskite RRAMs based on materials, device performance, switching mechanism, and potential applications. Moreover, this Perspective attempts to detail the challenges, such as the quality of halide perovskite films, the compatible processing of device fabrication, the reliability of memory performance, and clarification of the switching mechanism, and further discusses how the outstanding challenges of halide perovskite RRAMs could be met in future research.