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Achim Trampert
Researcher at Leibniz Institute for Neurobiology
Publications - 399
Citations - 11926
Achim Trampert is an academic researcher from Leibniz Institute for Neurobiology. The author has contributed to research in topics: Molecular beam epitaxy & Nanowire. The author has an hindex of 52, co-authored 390 publications receiving 11215 citations. Previous affiliations of Achim Trampert include Max Planck Society & University of California, Santa Barbara.
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Journal ArticleDOI
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Patrick Waltereit,Oliver Brandt,Achim Trampert,Holger T. Grahn,J. Menniger,Manfred Ramsteiner,M. Reiche,Klaus H. Ploog +7 more
TL;DR: It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.
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On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy
Jelena Ristic,Enrique Calleja,Sergio Fernández-Garrido,Laurent Cerutti,Achim Trampert,Uwe Jahn,Klaus H. Ploog +6 more
TL;DR: In this article, a study of the GaN nanocolumns nucleation and growth by molecular beam epitaxy on Si(111) is presented, where Ga droplets with different diameters (340-90 nm) were deposited on the substrate prior to growth, to determine any effect on the Nanocolumn's size and distribution.
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X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films
TL;DR: In this article, the authors analyzed the line shape of x-ray diffraction profiles of GaN epitaxial layers with large densities of randomly distributed threading dislocations.
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Origin of high-temperature ferromagnetism in (Ga,Mn)N layers grown on 4H–SiC(0001) by reactive molecular-beam epitaxy
Subhabrata Dhar,Oliver Brandt,Achim Trampert,Lutz Däweritz,K.-J. Friedland,K. H. Ploog,J. Keller,Bernd Beschoten,Gernot Güntherodt +8 more
TL;DR: In this article, the growth, structural and magnetic characterization of (Ga,Mn)N epitaxial layers grown directly on 4H-SiC(0001) by reactive molecular-beam epitaxy is reported.
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Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells
Werner Bergbauer,Werner Bergbauer,Martin Strassburg,Ch. Kölper,N. Linder,Claudia Roder,Jonas Lähnemann,Achim Trampert,Sönke Fündling,Shunfeng Li,Hergo-Heinrich Wehmann,Andreas Waag +11 more
TL;DR: This work demonstrates the fabrication of N-face GaN nanorods by metal organic vapour phase epitaxy (MOVPE), using continuous-flux conditions, in contrast to other approaches reported so far, which have been based on growth modes far off the conventional growth regimes.