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Akbar Doostaregan

Bio: Akbar Doostaregan is an academic researcher from Shahid Beheshti University. The author has contributed to research in topics: Nanoelectronics & CMOS. The author has an hindex of 4, co-authored 4 publications receiving 266 citations.

Papers
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Journal ArticleDOI
TL;DR: These circuits are designed based on the unique properties of CNFETs, such as the capability of setting the desired threshold voltage by changing the diameters of the nanotubes, which makes them very suitable for the multiple- V t design method.
Abstract: Novel high-performance ternary circuits for nanotechnology are presented here. Each of these carbon nanotube field-effect transistor (CNFET)-based circuits implements all the possible kinds of ternary logic, including negative, positive and standard ternary logics, in one structure. The proposed designs have good driving capability and large noise margins and are robust. These circuits are designed based on the unique properties of CNFETs, such as the capability of setting the desired threshold voltage by changing the diameters of the nanotubes. This property of CNFETs makes them very suitable for the multiple- V t design method. The proposed circuits are simulated exhaustively, using Synopsys HSPICE with 32 nm-CNFET technology in various test situations and different supply voltages. Simulation results demonstrate great improvements in terms of speed, power consumption and insusceptibility to process variations with respect to other conventional and state-of-the-art 32 nm complementary metal-oxide semiconductor and CNFET-based ternary circuits. For instance at 0.9 V, the proposed ternary logic and arithmetic circuits consume on average 53 and 40 less energy, respectively, compared to the CNFET-based ternary logic and arithmetic circuits, recently proposed in the literature.

202 citations

Journal ArticleDOI
TL;DR: Improvements in terms of power consumption, energy efficiency, robustness and specifically static power dissipation with respect to the other state-of-the-art ternary and quaternary circuits are demonstrated.
Abstract: This study presents new low-power multiple-valued logic (MVL) circuits for nanoelectronics. These carbon nanotube field effect transistor (FET) (CNTFET)-based MVL circuits are designed based on the unique characteristics of the CNTFET device such as the capability of setting the desired threshold voltages by adopting correct diameters for the nanotubes as well as the same carrier mobility for the P- and N-type devices. These characteristics make CNTFETs very suitable for designing high-performance multiple- V th circuits. The proposed MVL circuits are designed based on the conventional CMOS architecture and by utilising inherently binary gates. Moreover, each of the proposed CNTFET-based ternary circuits includes all the possible types of ternary logic, that is, negative, positive and standard, in one structure. The method proposed in this study is a universal technique for designing MVL logic circuits with any arbitrary number of logic levels, without static power dissipation. The results of the simulations, conducted using Synopsys HSPICE with 32 nm-CNTFET technology, demonstrate improvements in terms of power consumption, energy efficiency, robustness and specifically static power dissipation with respect to the other state-of-the-art ternary and quaternary circuits.

92 citations

Journal ArticleDOI
TL;DR: Simulation results demonstrate that the proposed designs have excellent functionality and are very suitable for implementing MVL and fuzzy arithmetic circuits.

21 citations

Proceedings ArticleDOI
09 Nov 2010
TL;DR: A novel low-power and high-performance Standard Ternary Inverter for CMOS technology is proposed, which consists of only MOS transistors and capacitors without any area consuming resistors in its structure.
Abstract: A novel low-power and high-performance Standard Ternary Inverter (STI) for CMOS technology is proposed in this paper. This inverter could be used as a fundamental block for designing other ternary basic logic gates. This circuit consists of only MOS transistors and capacitors without any area consuming resistors in its structure. Another great advantage of this design in comparison with the other designs, introduced before, is the elimination of the static power dissipation, which is very important in nano scale CMOS and leads to less power consumption. The proposed design has been simulated, using Synopsys HSPICE tool with 90nm CMOS technology. The simulation results demonstrate the superiority of the presented design with respect to other conventional designs in terms of power consumption and performance.

14 citations


Cited by
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Journal ArticleDOI
TL;DR: Improvements in terms of power consumption, energy efficiency, robustness and specifically static power dissipation with respect to the other state-of-the-art ternary and quaternary circuits are demonstrated.
Abstract: This study presents new low-power multiple-valued logic (MVL) circuits for nanoelectronics. These carbon nanotube field effect transistor (FET) (CNTFET)-based MVL circuits are designed based on the unique characteristics of the CNTFET device such as the capability of setting the desired threshold voltages by adopting correct diameters for the nanotubes as well as the same carrier mobility for the P- and N-type devices. These characteristics make CNTFETs very suitable for designing high-performance multiple- V th circuits. The proposed MVL circuits are designed based on the conventional CMOS architecture and by utilising inherently binary gates. Moreover, each of the proposed CNTFET-based ternary circuits includes all the possible types of ternary logic, that is, negative, positive and standard, in one structure. The method proposed in this study is a universal technique for designing MVL logic circuits with any arbitrary number of logic levels, without static power dissipation. The results of the simulations, conducted using Synopsys HSPICE with 32 nm-CNTFET technology, demonstrate improvements in terms of power consumption, energy efficiency, robustness and specifically static power dissipation with respect to the other state-of-the-art ternary and quaternary circuits.

92 citations

Journal ArticleDOI
TL;DR: An algorithm for synthesis that combines a geometrical representation with unary operators of multivalued logic that facilitates scanning appropriately to obtain simple sum-of-products expressions in terms of unary Operators is presented.
Abstract: Automatic synthesis of digital circuits has played a key role in obtaining high-performance designs. While considerable work has been done in the past, emerging device technologies call for a need to re-examine the synthesis approaches, so that better circuits that harness the true power of these technologies can be developed. This paper presents a methodology for synthesis applicable to devices that support ternary logic. We present an algorithm for synthesis that combines a geometrical representation with unary operators of multivalued logic . The geometric representation facilitates scanning appropriately to obtain simple sum-of-products expressions in terms of unary operators. An implementation based on Python is described. The power of the approach lies in its applicability to a wide variety of circuits. The proposed approach leads to the savings of 26% and 22% in transistor-count, respectively, for a ternary full-adder and a ternary content-addressable memory (TCAM) over the best existing designs. Furthermore, the proposed approach requires, on an average, less than 10% of the number of the transistors in comparison with a recent decoder-based design for various ternary benchmark circuits. Extensive HSPICE simulation results show roughly 92% reduction in power-delay product (PDP) for a $12\times 12$ TCAM and 60% reduction in PDP for a 24-ternary digit barrel shifter over recent designs.

72 citations

Journal ArticleDOI
TL;DR: In this article, two new efficient ternary Full Adder cells for nanoelectronics were proposed based on the unique characteristics of the CNTFET device, such as the capability of setting the desired threshold voltages by adopting proper diameters for the nanotubes as well as the same carrier mobilities for the N-type and P-type devices.
Abstract: This paper presents two new efficient ternary Full Adder cells for nanoelectronics. These CNTFET-based ternary Full Adders are designed based on the unique characteristics of the CNTFET device, such as the capability of setting the desired threshold voltages by adopting proper diameters for the nanotubes as well as the same carrier mobilities for the N-type and P-type devices. These characteristics of CNTFETs make them very suitable for designing high-performance multiple-Vth structures. The proposed structures reduce the number of the transistors considerably and have very high driving capability. The presented ternary Full Adders are simulated using Synopsys HSPICE with 32 nm CNTFET technology to evaluate their performance and to confirm their correct operation.

70 citations

Journal ArticleDOI
TL;DR: The results of simulation, using Hspice software and Stanford 32 nm CNTFET library with the voltage of 0.9 (v), indicate much lower power dissipation and power delay product (PDP) in comparison with the previous works.
Abstract: In the following paper, a single bit ternary multiplier utilizing carbon nanotube field-effect transistor (CNTFET) has been presented. Almost in the ternary circuit design, only one supply voltage VDD is used and a voltage division circuit is activated to produce VDD/2 for logic ‘1’, So the direct current from VDD to ground increases the static power considerably. In This paper, using two supply voltages, VDD and VDD/2, the circuit is designed so as VDD/2 could be transmitted to output directly for logic ‘1’ to eliminate direct current from source to ground. This is provided by proper division of truth table and using two level output gates. Also for extending to multi bit multiplier in this way, three type of half adders and one full adder are designed using two supply voltages and removing direct current. The implementation for two bits is reported. The results of simulation, using Hspice software and Stanford 32 nm CNTFET library with the voltage of 0.9 (v), as expected, indicate much lower power dissipation and power delay product (PDP) in comparison with the previous works.

69 citations

Journal ArticleDOI
TL;DR: These Carbon Nanotube FET-based circuits are compatible with the recent technologies and are designed based on the conventional CMOS architecture, while the previous quaternary designs used methods which are not suitable for nanoelectronics and have become obsolete.
Abstract: This paper presents novel high-performance and PVT tolerant quaternary logic circuits as well as efficient quaternary arithmetic circuits for nanoelectronics. These Carbon Nanotube FET (CNFET)-based circuits are compatible with the recent technologies and are designed based on the conventional CMOS architecture, while the previous quaternary designs used methods which are not suitable for nanoelectronics and have become obsolete. The proposed designs are robust and have large noise margins and high driving capability. The singular characteristics of CNFETs, such as the capability of having the desired threshold voltage by regulating the diameters of the nanotubes, make them very appropriate for voltage-mode multiple-threshold circuits design. The proposed circuits are examined, using Synopsys HSPICE with the standard 32 nm-CNFET technology in various situations and different supply voltages. Simulation results demonstrate the correct and high-performance operation of the proposed circuits even in the presence of process, voltage and temperature variations.

67 citations