scispace - formally typeset
Search or ask a question

Showing papers by "Akira Kinbara published in 1977"


Journal ArticleDOI
TL;DR: In this paper, the authors reported that the transverse magnetoresistance had a tendency of saturation with increasing magnetic fields, which was attributed to the scattering at the grain-boundary planes parallel to the electric field.
Abstract: Electromagnetic measurements on thin epitaxial Bi films (thickness: 350–6350 A) were carried out in magnetic fields up to 85 kG. The transverse magnetoresistance had a tendency of saturation with increasing magnetic fields. The tendency was stronger for thinner films. This behavior was attributed to the scattering at the grain‐boundary planes parallel to the electric field. In the measurements of longitudinal magnetoresistance, the momentum value of carriers estimated from the positions of peaks or shoulders in the magnetoresistance–vs–magnetic‐field curve was about 0.8×10−21 g cm/sec and agrees with the bulk Bi value. The appearance of peaks or shoulders can be interpreted by the partial diffuse scattering of carriers at film surfaces. Shubnikov–de Haas oscillations were observed in (dρ/dH) ‐H measurements. The oscillation period Δ (H−1) was found to depend on film thickness and the dependence was attributed to the thickness dependence of carrier densities in films. The oscillations caused by quantum siz...

9 citations


Journal ArticleDOI
TL;DR: In the activated tunneling model of electrical conductance of discontinuous thin metal films, non-Ohmic conductance has thus far been explained by a field-dependent activation energy at a high electric field as discussed by the authors.
Abstract: In the activated tunneling model of electrical conductance of discontinuous thin metal films, non‐Ohmic conductance has thus far been explained by a field‐dependent activation energy at a high electric field. We point out that this interpretation is not appropriate. Alternatively, the field effect should be ascribed to the non‐Ohmicity of the tunneling current density at a high electric field. Results of the computation are presented.

8 citations