Alan Michael Hynes

Bio: Alan Michael Hynes is an academic researcher from University College Dublin. The author has contributed to research in topics: Etching (microfabrication) & Reactive-ion etching. The author has an hindex of 16, co-authored 34 publications receiving 1112 citations. Previous affiliations of Alan Michael Hynes include Durham University & Harvard University.

Method of surface treatment of semiconductor substrates

Abstract: This invention relates to methods for treatment of semiconductor substrates and in particular a method of etching a trench in a semiconductor substrate in a reactor chamber using alternatively reactive ion etching and depositing a passivation layer by chemical vapour deposition, wherein one or more of the following parameters: gas flow rates, chamber pressure, plasma power, substrate bias, etch rate, deposition rate, cycle time and etching/deposition ratio vary with time.

Recent advances in silicon etching for MEMS using the ASE™ process

Abstract: In the ongoing enhancement of MEMS applications, the STS Advanced Silicon Etch, ASE™, process satisfies the demanding requirements of the industry. Typically, highly anisotropic, high aspect ratios profiles with fine CD control are required. Selectivities to photoresist of 150:1 with Si etch rates of up to 7 μm/min are achievable. Applications range from shallow etched optical devices to through wafer membrane etches. This paper details some of the fundamental trends of the ASE™ process and goes on to discuss how the process has been enhanced to meet product specifications. Parameter ramping is a powerful technique used to achieve the often conflicting requirements of high etch rate with good profile/CD control. The results are presented in this paper.

A method and apparatus for etching a substrate

Abstract: There is disclosed a method and apparatus for etching a substrate. The method comprises the steps of etching a substrate or alternately etching and depositing a passivation layer. A bias frequency, which may be pulsed, may be applied to the substrate and may be at or below the ion plasma frequency.

A methodology for curve‐fitting of the XPS Si 2p core level from thin siloxane coatings

Abstract: Plasma-enhanced coating processes are recognised as a route to well-adhered, conformal coatings, and are often used as a means of modifying the surface properties of materials, while having a minimal effect on the bulk characteristics of the substrate. Here, a method for providing an understanding of the chemistry of siloxane coatings prepared by plasma liquid deposition in atmospheric pressure (AP) is described. An iterative Si 2p–C 1s method for curve-fitting the C 1s and Si 2p core levels of siloxane coatings thinner than the depth of analysis of XPS has been developed when the substrate is poly(ethylene terephthalate) (PET) film. In addition to the determination of unambiguous binding energy positions for four siloxy environments, this has allowed the elemental composition of the coating to be determined in isolation of the substrate. Application of the binding energies to the Si 2p core levels of industrially relevant materials where the composition is not known by any other means can now be carried out. This can be used to provide understanding of the relationship between coating chemistry and plasma parameters, which is essential in the development of novel processes such as AP plasma liquid deposition, and will result in the deposition of coatings with controlled properties. Copyright © 2007 John Wiley & Sons, Ltd.

Pulsed Plasma Polymerization of Perfluorocyclohexane

Abstract: Pulsed versus continuous wave plasma polymerization of perfluorocyclohexane is compared as a function of duty cycle off-time, on-time, and peak power. The chemical composition of the deposited films has been determined by X-ray photoelectron spectroscopy (XPS). A greater retention of the chemical structure associated with the precursor molecule is found for the pulsed plasma polymerization experiments. This can be rationalized in terms of the relative perturbation of reactive species contained in the electrical discharge.

Etch rates for micromachining processing-Part II

Abstract: Samples of 53 materials that are used or potentially can be used or in the fabrication of microelectromechanical systems and integrated circuits were prepared: single-crystal silicon with two doping levels, polycrystalline silicon with two doping levels, polycrystalline germanium, polycrystalline SiGe, graphite, fused quartz, Pyrex 7740, nine other preparations of silicon dioxide, four preparations of silicon nitride, sapphire, two preparations of aluminum oxide, aluminum, Al/2%Si, titanium, vanadium, niobium, two preparations of tantalum, two preparations of chromium, Cr on Au, molybdenum, tungsten, nickel, palladium, platinum, copper, silver, gold, 10 Ti/90 W, 80 Ni/20 Cr, TiN, four types of photoresist, resist pen, Parylene-C, and spin-on polyimide. Selected samples were etched in 35 different etches: isotropic silicon etchant, potassium hydroxide, 10:1 HF, 5:1 BHF, Pad Etch 4, hot phosphoric acid, Aluminum Etchant Type A, titanium wet etchant, CR-7 chromium etchant, CR-14 chromium etchant, molybdenum etchant, warm hydrogen peroxide, Copper Etchant Type CE-200, Copper Etchant APS 100, dilute aqua regia, AU-5 gold etchant, Nichrome Etchant TFN, hot sulfuric+phosphoric acids, Piranha, Microstrip 2001, acetone, methanol, isopropanol, xenon difluoride, HF+H/sub 2/O vapor, oxygen plasma, two deep reactive ion etch recipes with two different types of wafer clamping, SF/sub 6/ plasma, SF/sub 6/+O/sub 2/ plasma, CF/sub 4/ plasma, CF/sub 4/+O/sub 2/ plasma, and argon ion milling. The etch rates of 620 combinations of these were measured. The etch rates of thermal oxide in different dilutions of HF and BHF are also reported. Sample preparation and information about the etches is given.

High aspect ratio silicon etch: A review

Abstract: High aspect ratio (HAR) silicon etch is reviewed, including commonly used terms, history, main applications, different technological methods, critical challenges, and main theories of the technologies. Chronologically, HAR silicon etch has been conducted using wet etch in solution, reactive ion etch (RIE) in low density plasma, single-step etch at cryogenic conditions in inductively coupled plasma (ICP) combined with RIE, time-multiplexed deep silicon etch in ICP-RIE configuration reactor, and single-step etch in high density plasma at room or near room temperature. Key specifications are HAR, high etch rate, good trench sidewall profile with smooth surface, low aspect ratio dependent etch, and low etch loading effects. Till now, time-multiplexed etch process is a popular industrial practice but the intrinsic scalloped profile of a time-multiplexed etch process, resulting from alternating between passivation and etch, poses a challenge. Previously, HAR silicon etch was an application associated primarily with microelectromechanical systems. In recent years, through-silicon-via (TSV) etch applications for three-dimensional integrated circuit stacking technology has spurred research and development of this enabling technology. This potential large scale application requires HAR etch with high and stable throughput, controllable profile and surface properties, and low costs.

Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates

Abstract: A method for forming a MEMS device is disclosed, where a final release step is performed just prior to a wafer bonding step to protect the MEMS device from contamination, physical contact, or other deleterious external events. Without additional changes to the MEMS structure between release and wafer bonding and singulation, except for an optional stiction treatment, the MEMS device is best protected and overall process flow is improved. The method is applicable to the production of any MEMS device and is particularly beneficial in the making of fragile micromirrors.

Surface tension-powered self-assembly of microstructures - the state-of-the-art

Abstract: Because of the low dimensional power of its force scaling law, surface tension is appropriate for carrying out reshaping and assembly in the microstructure size domain. This paper reviews work on surface tension powered self-assembly of microstructures. The existing theoretical approaches for rotational assembly are unified. The demonstrated fabrication processes are compared. Mechanisms for accurately determining the assembled shape are discussed, and the limits on accuracy and structural distortion are considered. Applications in optics, electronics and mechanics are described. More complex operations (including the combination of self-assembly and self-organization) are also reviewed.

Chemical Vapor Deposition of Conformal, Functional, and Responsive Polymer Films

Abstract: Chemical vapor deposition (CVD) polymerization utilizes the delivery of vapor-phase monomers to form chemically well-defined polymeric films directly on the surface of a substrate. CVD polymers are desirable as conformal surface modification layers exhibiting strong retention of organic functional groups, and, in some cases, are responsive to external stimuli. Traditional wet-chemical chain- and step-growth mechanisms guide the development of new heterogeneous CVD polymerization techniques. Commonality with inorganic CVD methods facilitates the fabrication of hybrid devices. CVD polymers bridge microfabrication technology with chemical, biological, and nanoparticle systems and assembly. Robust interfaces can be achieved through covalent grafting enabling high-resolution (60 nm) patterning, even on flexible substrates. Utilizing only low-energy input to drive selective chemistry, modest vacuum, and room-temperature substrates, CVD polymerization is compatible with thermally sensitive substrates, such as paper, textiles, and plastics. CVD methods are particularly valuable for insoluble and infusible films, including fluoropolymers, electrically conductive polymers, and controllably crosslinked networks and for the potential to reduce environmental, health, and safety impacts associated with solvents. Quantitative models aid the development of large-area and roll-to-roll CVD polymer reactors. Relevant background, fundamental principles, and selected applications are reviewed.