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Alan T. Dorsey
Researcher at University of Florida
Publications - 62
Citations - 6060
Alan T. Dorsey is an academic researcher from University of Florida. The author has contributed to research in topics: Superconductivity & Magnetic field. The author has an hindex of 26, co-authored 62 publications receiving 5649 citations. Previous affiliations of Alan T. Dorsey include University of Virginia & University of Illinois at Urbana–Champaign.
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Journal ArticleDOI
Dynamics of the dissipative two-state system
Anthony J. Leggett,Sudip Chakravarty,Alan T. Dorsey,Matthew P. A. Fisher,Anupam Garg,Wilhelm Zwerger +5 more
TL;DR: In this article, a functional-integral approach to the dynamics of a two-state system coupled to a dissipative environment is presented, and an exact and general prescription for the reduction, under appropriate circumstances, of the problem of a system tunneling between two wells in the presence of dissipative environments to the spin-boson problem is given.
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Effect of fluctuations on the transport properties of type-II superconductors in a magnetic field
Salman Ullah,Alan T. Dorsey +1 more
TL;DR: The transport coefficients in the self-consistent Hartree approximation are evaluated which interpolates smoothly between the high-tem temperature regime, dominated by Gaussian fluctuations, and the low-temperature flux-flow regime, with no intervening divergence.
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Vortex motion and the Hall effect in type-II superconductors: A time-dependent Ginzburg-Landau theory approach
TL;DR: Using a method due to Gor'kov and Kopnin, an equation of motion for a single vortex (B<
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Critical fluctuations in high-temperature superconductors and the Ettingshausen effect
Salman Ullah,Alan T. Dorsey +1 more
TL;DR: Examining the fluctuation Ettingshausen effect in a type-II superconductor using the time-dependent Ginzburg-Landau equation eliminates the divergence and provides a quantitative explanation of the experiments.
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Dissipative quantum tunneling in a biased double-well system at finite temperatures.
TL;DR: On etudie l'effet tunnel quantique dans un potentiel puits double asymetrique en presence de dissipation ohmique avec un coefficient de frottement α>1.