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Alban Gassenq

Bio: Alban Gassenq is an academic researcher from University of Grenoble. The author has contributed to research in topics: Germanium & Silicon photonics. The author has an hindex of 23, co-authored 87 publications receiving 1747 citations. Previous affiliations of Alban Gassenq include University of Lyon & Intec, Inc..


Papers
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Journal ArticleDOI
TL;DR: This work demonstrates that GeSn/Ge heterostructures can be used to developed SOI waveguide integrated photodetectors for short-wave infrared applications.
Abstract: A surface-illuminated photoconductive detector based on Ge0.91Sn0.09 quantum wells with Ge barriers grown on a silicon substrate is demonstrated. Photodetection up to 2.2µm is achieved with a responsivity of 0.1 A/W for 5V bias. The spectral absorption characteristics are analyzed as a function of the GeSn/Ge heterostructure parameters. This work demonstrates that GeSn/Ge heterostructures can be used to developed SOI waveguide integrated photodetectors for short-wave infrared applications.

184 citations

Journal ArticleDOI
TL;DR: In this article, the authors reported a longer emitted wavelength and a significant improvement in lasing temperature using higher Sn content GeSn layers of optimized crystalline quality, grown on graded Sn content buffers using Reduced Pressure CVD.
Abstract: Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 um wavelength up to 130 K. In this work, we report a longer emitted wavelength and a significant improvement in lasing temperature. The improvements resulted from the use of higher Sn content GeSn layers of optimized crystalline quality, grown on graded Sn content buffers using Reduced Pressure CVD. The fabricated GeSn micro-disks with 13% and 16% of Sn showed lasing operation at 2.6 um and 3.1 um wavelengths, respectively. For the longest wavelength (i.e 3.1 um), lasing was demonstrated up to 180 K, with a threshold of 377 kW/cm2 at 25 K.

157 citations

Journal ArticleDOI
TL;DR: In this article, a longer emitted wavelength and a significant improvement in lasing temperature were reported for GeSn micro-disks with higher Sn content GeSn layers of optimized crystalline quality.
Abstract: Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 μm wavelength up to 130 K. In this work, we report a longer emitted wavelength and a significant improvement in lasing temperature. The improvements resulted from the use of higher Sn content GeSn layers of optimized crystalline quality, grown on graded Sn content buffers using reduced pressure CVD. The fabricated GeSn micro-disks with 13% and 16% of Sn showed lasing operation at 2.6 μm and 3.1 μm wavelengths, respectively. For the longest wavelength (i.e., 3.1 μm), lasing behavior was demonstrated up to 180 K, with a threshold of 377 kW/cm2 at 25 K.

137 citations

Journal ArticleDOI
TL;DR: In this paper, the authors review the work on heterogeneous III-V-on-silicon photonic components and circuits for applications in optical communication and sensing and elaborate on the integration strategy and describe a broad range of devices realized on this platform.
Abstract: In the paper, we review our work on heterogeneous III-V-on-silicon photonic components and circuits for applications in optical communication and sensing. We elaborate on the integration strategy and describe a broad range of devices realized on this platform covering a wavelength range from 850 nm to 3.85 μm.

131 citations

Journal ArticleDOI
TL;DR: In this paper, a silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range is discussed, where the strong nonlinearity of silicon combined with the low nonlinear absorption in the mid-infrared is exploited to generate picosecond pulse based supercontinuum sources, optical parametric oscillators and wavelength translators connecting the tele communication wavelength range and the midinfrared.
Abstract: In this paper we discuss silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range. Silicon-on-insulator and germanium-on-silicon passive waveguide circuits are described, as well as the integration of III-V semiconductors, IV-VI colloidal nanoparticles and GeSn alloys on these circuits for increasing the functionality. The strong nonlinearity of silicon combined with the low nonlinear absorption in the mid-infrared is exploited to generate picosecond pulse based supercontinuum sources, optical parametric oscillators and wavelength translators connecting the telecommunication wavelength range and the mid-infrared.

116 citations


Cited by
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Journal ArticleDOI
TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.
Abstract: Lasing is experimentally demonstrated in a direct bandgap GeSn alloy, grown directly onto Si(001). The authors observe a clear lasing threshold as well as linewidth narrowing at low temperatures.

1,027 citations

Journal ArticleDOI
TL;DR: In this article, the authors provide an overview and outlook for the silicon waveguide platform, optical sources, optical modulators, photodetectors, integration approaches, packaging, applications of silicon photonics and approaches required to satisfy applications at mid-infrared wavelengths.
Abstract: Silicon photonics research can be dated back to the 1980s. However, the previous decade has witnessed an explosive growth in the field. Silicon photonics is a disruptive technology that is poised to revolutionize a number of application areas, for example, data centers, high-performance computing and sensing. The key driving force behind silicon photonics is the ability to use CMOS-like fabrication resulting in high-volume production at low cost. This is a key enabling factor for bringing photonics to a range of technology areas where the costs of implementation using traditional photonic elements such as those used for the telecommunications industry would be prohibitive. Silicon does however have a number of shortcomings as a photonic material. In its basic form it is not an ideal material in which to produce light sources, optical modulators or photodetectors for example. A wealth of research effort from both academia and industry in recent years has fueled the demonstration of multiple solutions to these and other problems, and as time progresses new approaches are increasingly being conceived. It is clear that silicon photonics has a bright future. However, with a growing number of approaches available, what will the silicon photonic integrated circuit of the future look like? This roadmap on silicon photonics delves into the different technology and application areas of the field giving an insight into the state-of-the-art as well as current and future challenges faced by researchers worldwide. Contributions authored by experts from both industry and academia provide an overview and outlook for the silicon waveguide platform, optical sources, optical modulators, photodetectors, integration approaches, packaging, applications of silicon photonics and approaches required to satisfy applications at mid-infrared wavelengths. Advances in science and technology required to meet challenges faced by the field in each of these areas are also addressed together with predictions of where the field is destined to reach.

939 citations

Journal ArticleDOI
TL;DR: In this paper, the underlying concepts, breakthroughs and remaining challenges in photodetector technologies based on lead sulphide (PbS) nanocrystals have been reviewed and compared.
Abstract: Light detection is the underlying principle of many optoelectronic systems. For decades, semiconductors including silicon carbide, silicon, indium gallium arsenide and germanium have dominated the photodetector industry. They can show excellent photosensitivity but are limited by one or more aspects, such as high production cost, high-temperature processing, flexible substrate incompatibility, limited spectral range or a requirement for cryogenic cooling for efficient operation. Recently lead sulphide (PbS) nanocrystals have emerged as one of the most promising new materials for photodetector fabrication. They offer several advantages including low-cost manufacturing, solution processability, size-tunable spectral sensitivity and flexible substrate compatibility, and they have achieved figures of merit outperforming conventional photodetectors. We review the underlying concepts, breakthroughs and remaining challenges in photodetector technologies based on PbS nanocrystals.

504 citations

01 Jan 2002
TL;DR: In this article, a review of numerical and experimental studies of supercontinuum generation in photonic crystal fiber is presented over the full range of experimentally reported parameters, from the femtosecond to the continuous-wave regime.
Abstract: A topical review of numerical and experimental studies of supercontinuum generation in photonic crystal fiber is presented over the full range of experimentally reported parameters, from the femtosecond to the continuous-wave regime. Results from numerical simulations are used to discuss the temporal and spectral characteristics of the supercontinuum, and to interpret the physics of the underlying spectral broadening processes. Particular attention is given to the case of supercontinuum generation seeded by femtosecond pulses in the anomalous group velocity dispersion regime of photonic crystal fiber, where the processes of soliton fission, stimulated Raman scattering, and dispersive wave generation are reviewed in detail. The corresponding intensity and phase stability properties of the supercontinuum spectra generated under different conditions are also discussed.

360 citations

Journal ArticleDOI
TL;DR: In this article, the state of this emerging photonic circuit design flow and its synergies with electronic design automation (EDA) is reviewed. And the similarities and differences between photonic and electronic design, and the challenges and opportunities that present themselves in the new photonic design landscape, such as variability analysis, photonic-electronic co-simulation and compact model definition.
Abstract: Silicon Photonics technology is rapidly maturing as a platform for larger-scale photonic circuits. As a result, the associated design methodologies are also evolving from componentoriented design to a more circuit-oriented design flow, that makes abstraction from the very detailed geometry and enables design on a larger scale. In this paper, we review the state of this emerging photonic circuit design flow and its synergies with electronic design automation (EDA). We cover the design flow from schematic capture, circuit simulation, layout and verification. We discuss the similarities and the differences between photonic and electronic design, and the challenges and opportunities that present themselves in the new photonic design landscape, such as variability analysis, photonic-electronic co-simulation and compact model definition. Silicon Photonics Circuit Design: Methods, Tools and

355 citations