Author
Albert A. Burk
Bio: Albert A. Burk is an academic researcher from Cree Inc.. The author has contributed to research in topics: Layer (electronics) & Doping. The author has an hindex of 20, co-authored 57 publications receiving 1230 citations.
Topics: Layer (electronics), Doping, Wafer, Epitaxy, Silicon carbide
Papers published on a yearly basis
Papers
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15 Jun 2014
TL;DR: In this article, the 4H-SiC MOSFETs were further optimized for high power, high-frequency, and high-voltage energy conversion and transmission applications and achieved new breakthrough performance for voltage ratings from 900 V up to 15 kV.
Abstract: Since Cree, Inc.'s 2
nd
generation 4H-SiC MOSFETs were commercially released with a specific on-resistance (R
ON, SP
) of 5 mΩ·cm
2
for a 1200 V-rating in early 2013, we have further optimized the device design and fabrication processes as well as greatly expanded the voltage ratings from 900 V up to 15 kV for a much wider range of high-power, high-frequency, and high-voltage energy-conversion and transmission applications. Using these next-generation SiC MOSFETs, we have now achieved new breakthrough performance for voltage ratings from 900 V up to 15 kV with a R
ON, SP
as low as 2.3 mΩ·cm
2
for a breakdown voltage (BV) of 1230 V and 900 V-rating, 2.7 mΩ·cm
2
for a BV of 1620 V and 1200 V-rating, 3.38 mΩ·cm
2
for a BV of 1830 V and 1700 V-rating, 10.6 mΩ·cm
2
for a BV of 4160 V and 3300 V-rating, 123 mΩ·cm
2
for a BV of 12 kV and 10 kV-rating, and 208 mΩ·cm
2
for a BV of 15.5 kV and 15 kV-rating. In addition, due to the lack of current tailing during the bipolar device switching turn-off, the SiC MOSFETs reported in this work exhibit incredibly high frequency switching performance over their silicon counter parts.
236 citations
13 Nov 2014
TL;DR: In this article, the authors developed 10 kV/20 A SiC MOSFETs with a chip size of 8.1 × 8 mm2 and a specific on-resistance (RON, SP) of 100 MΩ-cm2 at 25 °C.
Abstract: Advanced high-voltage (10 kV-15 kV) silicon carbide (SiC) power MOSFETs described in this paper have the potential to significantly impact the system performance, size, weight, high-temperature reliability, and cost of next-generation energy conversion and transmission systems. In this paper, we report our recently developed 10 kV/20 A SiC MOSFETs with a chip size of 8.1 × 8.1 mm2 and a specific on-resistance (RON, SP) of 100 MΩ-cm2 at 25 °C. We also developed 15 kV/10 A SiC power MOSFETs with a chip size of 8 × 8 mm2 and a RON, SP of 204 mQ cm2 at 25 °C. To our knowledge, this 15 kV SiC MOSFET is the highest voltage rated unipolar power switch. Compared to the commercial 6.5 kV Silicon (Si) IGBTs, these 10 kV and 15 kV SiC MOSFETs exhibit extremely low switching losses even when they are switched at 2-3× higher voltage. The benefits of using these 10 kV and 15 kV SiC MOSFETs include simplifying from multilevel to two-level topology and removing the need for time-interleaving by improving the switching frequency from a few hundred Hz for Si based systems to ≥ 10 kHz for hard-switched SiC based systems.
126 citations
01 Nov 2008
TL;DR: In this paper, the authors discuss the recent progress in large area silicon carbide (SiC) DMOSFETs and junction barrier Schottky (JBS) diodes.
Abstract: This paper discusses the recent progress in large area silicon carbide (SiC) DMOSFETs and junction barrier Schottky (JBS) diodes 12 kV and 10 kV SiC DMOSFETs have been produced with die areas greater than 064 cm2 SiC JBS diode dies also rated at 12 kV and 10 kV have been produced with die areas exceeding 15 cm2 These results demonstrate that SiC power devices provide a significant leap forward in performance for industrial electronics applications At 12 kV, SiC DMOSFETs offer a reduction of power loss of greater than 50 % with dies less than half the size when compared to silicon (Si) IGBTs The SiC JBS diodes offer significant reductions in reverse recovery losses At 10 kV, there are no Si devices that can compete with SiC on a single device basis Data on 12 kV and 10 kV devices are presented along with future trends
90 citations
15 Jun 2014
TL;DR: In this article, a thermal oxidation process was applied to enhance the carrier lifetime prior to the device fabrication, and the lifetime enhanced devices displayed nearly 1 V lower forward voltage drop with little increase in switching energy and no degradation of static blocking.
Abstract: In this paper, we report our recently developed large area 4H-SiC n-IGBTs that have a chip size of 1 cm 2 and an active conducting area of 0.37 cm 2 . A blocking voltage of 22.6 kV has been demonstrated with a leakage current of 9 μA at a gate bias of 0 V at room-temperature. This is the highest breakdown voltage of a single MOS-controlled semiconductor switch reported to date. To improve the conductivity modulation and lower the conduction losses during the on-state, a thermal oxidation process was applied to enhance the carrier lifetime prior to the device fabrication. Compared to the devices that did not receive this lifetime enhancement process, the lifetime enhanced devices displayed nearly 1 V lower forward voltage drop with little increase in switching energy and no degradation of static blocking characteristics. A specific differential on-resistance of 55 mΩ-cm 2 at 20 A and 125 °C was achieved, suggesting that bipolar power devices with thick drift regions can benefit from further enhancement of the ambipolar carrier lifetime.
73 citations
24 Nov 2014
TL;DR: In this paper, reliability and stability data based on a large body of data accumulated from high volume production of SiC power MOSFETs was presented, and a wide range of blocking voltages, from 900 V to 15 kV, was also demonstrated.
Abstract: In this paper, we present reliability and stability data based on a large body of data accumulated from high volume production of SiC power MOSFETs. The SiC MOSFETs (Gen2, C2M) showed excellent body diode and threshold voltage stability after 1000 hours of accelerated stressing tests. Results from next generation SiC power MOSFET development efforts are also presented. A significant reduction in specific on-resistance was demonstrated, and a wide range of blocking voltages, from 900 V to 15 kV, has also been demonstrated.
63 citations
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TL;DR: In this article, a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation is presented.
Abstract: Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.
1,648 citations
07 Nov 2002
TL;DR: It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300/spl deg/C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog VLSI in this temperature range.
Abstract: The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300/spl deg/C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog VLSI in this temperature range. However practical operation of silicon power devices at ambient temperatures above 200/spl deg/C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.
863 citations
TL;DR: The technology progress of SiC power devices and their emerging applications are reviewed and the design challenges and future trends are summarized.
Abstract: Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and higher temperature. This paper reviews the technology progress of SiC power devices and their emerging applications. The design challenges and future trends are summarized at the end of the paper.
806 citations
TL;DR: In this article, the features and present status of SiC power devices are briefly described, and several important aspects of the material science and device physics of the SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed.
Abstract: Power semiconductor devices are key components in power conversion systems. Silicon carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable for high-voltage and low-loss power devices. Through recent progress in the crystal growth and process technology of SiC, the production of medium-voltage (600?1700 V) SiC Schottky barrier diodes (SBDs) and power metal?oxide?semiconductor field-effect transistors (MOSFETs) has started. However, basic understanding of the material properties, defect electronics, and the reliability of SiC devices is still poor. In this review paper, the features and present status of SiC power devices are briefly described. Then, several important aspects of the material science and device physics of SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed. Fundamental issues regarding SiC SBDs and power MOSFETs are also discussed.
750 citations
Book•
23 Sep 2014
TL;DR: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications is provided in this paper. But the authors focus on the SiC Schottky barrier diodes (SBDs) and do not provide an in-depth reference for scientists and engineers working in this field.
Abstract: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field . Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are:
658 citations