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Albert Chin
Researcher at National Chiao Tung University
Publications - 432
Citations - 9147
Albert Chin is an academic researcher from National Chiao Tung University. The author has contributed to research in topics: Gate dielectric & High-κ dielectric. The author has an hindex of 46, co-authored 428 publications receiving 8626 citations. Previous affiliations of Albert Chin include Syracuse University & Bell Labs.
Papers
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Journal ArticleDOI
N-type Schottky barrier source/drain MOSFET using ytterbium silicide
Shiyang Zhu,J.D. Chen,Ming-Fu Li,Ming-Fu Li,Sungjoo Lee,Janak Singh,Chunxiang Zhu,Anyan Du,C.H. Tung,Albert Chin,Dim-Lee Kwong +10 more
TL;DR: Ytterbium silicide, for the first time, was used to form the Schottky barrier source/drain (S/D) of N-channel MOSFETs.
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Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric
TL;DR: Pentacene organic thin-film transistors (OTFTs) with a high-kappa HfLaO dielectric were integrated onto flexible polyimide substrates as discussed by the authors.
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Electrical characteristics of high quality La 2 O 3 gate dielectric with equivalent oxide thickness of 5 /spl Aring/
TL;DR: In this article, the electrical and reliability properties of ultrathin La/sub 2/O/sub 3/ gate dielectric have been investigated and the measured capacitance of 33 /spl Aring/La/sub 1/2O/Sub 3/3/ gate is 7.2 /spl mu/F/cm/sup 2/ that gives an effective K value of 27 and an equivalent oxide thickness of 4.8 /spl aring.
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High-density MIM capacitors using Al 2 O 3 and AlTiO x dielectrics
TL;DR: In this article, the electrical properties of Al/sub 2/O/sub 3/ and AlTiO/Sub x/ MIM capacitors from the IF (100 KHz) to RF (20 GHz) frequency range were investigated.
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Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate
Nan Wu,Qingchun Zhang,Chunxiang Zhu,Chia Chin Yeo,S.J. Whang,D.S.H. Chan,M.F. Li,Byung Jin Cho,Albert Chin,Dim-Lee Kwong,Anyan Du,C.H. Tung,N. Balasubramanian +12 more
TL;DR: In this article, a surface annealing step in NH3 ambient before the HfO2 deposition could result in significant improvement in both gate leakage current and the equivalent oxide thickness (EOT).