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Alessandro Tocchio

Researcher at STMicroelectronics

Publications -  87
Citations -  932

Alessandro Tocchio is an academic researcher from STMicroelectronics. The author has contributed to research in topics: Gyroscope & Capacitive sensing. The author has an hindex of 16, co-authored 84 publications receiving 811 citations. Previous affiliations of Alessandro Tocchio include Polytechnic University of Milan & Royal Institute of Technology.

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A Resonant Microaccelerometer With High Sensitivity Operating in an Oscillating Circuit

TL;DR: In this article, a micromachined uniaxial silicon resonant accelerometer characterized by a high sensitivity and very small dimensions is presented, which is based on the frequency variations of two resonating beams coupled to a proof mass.
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$Z$ -Axis Magnetometers for MEMS Inertial Measurement Units Using an Industrial Process

TL;DR: A very compact device that can fit in the same package of the gyroscope to realize an all-MEMS seven-degree-of-freedom IMU is proposed and experimentally tested.
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High Scale-Factor Stability Frequency-Modulated MEMS Gyroscope: 3-Axis Sensor and Integrated Electronics Design

TL;DR: This paper reports the developments toward an integrated, tri-axial, frequency-modulated, consumer-grade, and microelectromechanical system (MEMS) gyroscope with yaw- and pitch-rate sensing systems demonstrated.
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Design Criteria of Low-Power Oscillators for Consumer-Grade MEMS Resonant Sensors

TL;DR: The constraints in the design of circuits for microelectromechanical systems (MEMS) resonant sensors in consumer applications are discussed, a novel integrated circuit implementation is presented, and it is shown that this approach can be competitive with respect to the mostly used capacitive readout.
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Operation of Lorentz-Force MEMS Magnetometers With a Frequency Offset Between Driving Current and Mechanical Resonance

TL;DR: In this article, the authors discuss the operation of Lorentz-force-based microelectromechanical magnetometers at a driving-current frequency slightly lower than the device resonance frequency.