Alex K.-Y. Jen

Bio: Alex K.-Y. Jen is an academic researcher from City University of Hong Kong. The author has contributed to research in topics: Perovskite (structure) & Polymer solar cell. The author has an hindex of 128, co-authored 921 publications receiving 61811 citations. Previous affiliations of Alex K.-Y. Jen include University of Nebraska–Lincoln & Zhejiang California International NanoSystems Institute.

Silicon-organic hybrid (SOH) modulators for intensity-modulation / direct-detection links with line rates of up to 120 Gbit/s.

Abstract: High-speed interconnects in data-center and campus-area networks crucially rely on efficient and technically simple transmission techniques that use intensity modulation and direct detection (IM/DD) to bridge distances of up to a few kilometers. This requires electro-optic modulators that combine low operation voltages with large modulation bandwidth and that can be operated at high symbol rates using integrated drive circuits. Here we explore the potential of silicon-organic hybrid (SOH) Mach-Zehnder modulators (MZM) for generating high-speed IM/DD signals at line rates of up to 120 Gbit/s. Using a SiGe BiCMOS signal-conditioning chip, we demonstrate that intensity-modulated duobinary (IDB) signaling allows to efficiently use the electrical bandwidth, thereby enabling line rates of up to 100 Gbit/s at bit error ratios (BER) of 8.5 × 10−5. This is the highest data rate achieved so far using a silicon-based MZM in combination with a dedicated signal-conditioning integrated circuit (IC). We further show four-level pulse-amplitude modulation (PAM4) at lines rates of up to 120 Gbit/s (BER = 3.2 × 10−3) using a high-speed arbitrary-waveform generator and a 0.5 mm long MZM. This is the highest data rate hitherto achieved with a sub-millimeter MZM on the silicon photonic platform.

Efficient cyano-containing electron-transporting polymers for light-emitting diodes

Abstract: Two copolymers composed of 9,9-di-n-hexylfluorene and 2,5-dicyanobenzene (PF−CNP (3:1) and PF−CNP (1:1)) were synthesized via the Suzuki coupling reaction. By attaching two electron-withdrawing cyano groups onto the phenylene ring, the electron affinity and conduction of polyfluorenes are greatly enhanced. The device based on PF−CNP (3:1) has a low turn-on voltage (3.4 V), bright blue emission (5430 cd/m2 at a bias voltage of 7.4 V), and a maximum external quantum efficiency of 0.50% due to both optimized electron affinity and conduction.

Open-Circuit Voltage Losses in Selenium-Substituted Organic Photovoltaic Devices from Increased Density of Charge-Transfer States

Abstract: Using an analysis based on Marcus theory, we characterize losses in open-circuit voltage (VOC) due to changes in charge-transfer state energy, electronic coupling, and spatial density of charge-transfer states in a series of polymer/fullerene solar cells. We use a series of indacenodithiophene polymers and their selenium-substituted analogs as electron donor materials and fullerenes as the acceptors. By combining device measurements and spectroscopic studies (including subgap photocurrent, electroluminescence, and, importantly, time-resolved photoluminescence of the charge-transfer state) we are able to isolate the values for electronic coupling and the density of charge-transfer states (NCT), rather than the more commonly measured product of these values. We find values for NCT that are surprisingly large (∼4.5 × 1021–6.2 × 1022 cm–3), and we find that a significant increase in NCT upon selenium substitution in donor polymers correlates with lower VOC for bulk heterojunction photovoltaic devices. The inc...

Electron-hole diffusion lengths exceeding 1 micrometer in an organometal trihalide perovskite absorber.

Abstract: Organic-inorganic perovskites have shown promise as high-performance absorbers in solar cells, first as a coating on a mesoporous metal oxide scaffold and more recently as a solid layer in planar heterojunction architectures. Here, we report transient absorption and photoluminescence-quenching measurements to determine the electron-hole diffusion lengths, diffusion constants, and lifetimes in mixed halide (CH3NH3PbI(3-x)Cl(x)) and triiodide (CH3NH3PbI3) perovskite absorbers. We found that the diffusion lengths are greater than 1 micrometer in the mixed halide perovskite, which is an order of magnitude greater than the absorption depth. In contrast, the triiodide absorber has electron-hole diffusion lengths of ~100 nanometers. These results justify the high efficiency of planar heterojunction perovskite solar cells and identify a critical parameter to optimize for future perovskite absorber development.

Electron-Hole Diffusion Lengths Exceeding 1 Micrometer in an Organometal Trihalide Perovskite Absorber

Abstract: Organic-inorganic perovskites have shown promise as high-performance absorbers in solar cells, first as a coating on a mesoporous metal oxide scaffold and more recently as a solid layer in planar heterojunction architectures. Here, we report transient absorption and photoluminescence-quenching measurements to determine the electron-hole diffusion lengths, diffusion constants, and lifetimes in mixed halide (CH3NH3PbI(3-x)Cl(x)) and triiodide (CH3NH3PbI3) perovskite absorbers. We found that the diffusion lengths are greater than 1 micrometer in the mixed halide perovskite, which is an order of magnitude greater than the absorption depth. In contrast, the triiodide absorber has electron-hole diffusion lengths of ~100 nanometers. These results justify the high efficiency of planar heterojunction perovskite solar cells and identify a critical parameter to optimize for future perovskite absorber development.

Interface engineering of highly efficient perovskite solar cells

Abstract: Advancing perovskite solar cell technologies toward their theoretical power conversion efficiency (PCE) requires delicate control over the carrier dynamics throughout the entire device. By controlling the formation of the perovskite layer and careful choices of other materials, we suppressed carrier recombination in the absorber, facilitated carrier injection into the carrier transport layers, and maintained good carrier extraction at the electrodes. When measured via reverse bias scan, cell PCE is typically boosted to 16.6% on average, with the highest efficiency of ~19.3% in a planar geometry without antireflective coating. The fabrication of our perovskite solar cells was conducted in air and from solution at low temperatures, which should simplify manufacturing of large-area perovskite devices that are inexpensive and perform at high levels.

Aggregation-Induced Emission: Together We Shine, United We Soar!

Abstract: Ju Mei,†,‡,∥ Nelson L. C. Leung,†,‡,∥ Ryan T. K. Kwok,†,‡ Jacky W. Y. Lam,†,‡ and Ben Zhong Tang*,†,‡,§ †HKUST-Shenzhen Research Institute, Hi-Tech Park, Nanshan, Shenzhen 518057, China ‡Department of Chemistry, HKUST Jockey Club Institute for Advanced Study, Institute of Molecular Functional Materials, Division of Biomedical Engineering, State Key Laboratory of Molecular Neuroscience, Division of Life Science, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China Guangdong Innovative Research Team, SCUT-HKUST Joint Research Laboratory, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China

High-performance photovoltaic perovskite layers fabricated through intramolecular exchange

Abstract: The band gap of formamidinium lead iodide (FAPbI3) perovskites allows broader absorption of the solar spectrum relative to conventional methylammonium lead iodide (MAPbI3). Because the optoelectronic properties of perovskite films are closely related to film quality, deposition of dense and uniform films is crucial for fabricating high-performance perovskite solar cells (PSCs). We report an approach for depositing high-quality FAPbI3 films, involving FAPbI3 crystallization by the direct intramolecular exchange of dimethylsulfoxide (DMSO) molecules intercalated in PbI2 with formamidinium iodide. This process produces FAPbI3 films with (111)-preferred crystallographic orientation, large-grained dense microstructures, and flat surfaces without residual PbI2. Using films prepared by this technique, we fabricated FAPbI3-based PSCs with maximum power conversion efficiency greater than 20%.