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Alex Panchula

Researcher at First Solar

Publications -  47
Citations -  6233

Alex Panchula is an academic researcher from First Solar. The author has contributed to research in topics: Magnetoresistance & Spin polarization. The author has an hindex of 24, co-authored 47 publications receiving 5798 citations. Previous affiliations of Alex Panchula include Samsung & Iowa State University.

Papers
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Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

TL;DR: Sputter-deposited polycrystalline MTJs grown on an amorphous underlayer, but with highly oriented MgO tunnel barriers and CoFe electrodes, exhibit TMR values of up to ∼220% at room temperature and ∼300% at low temperatures, which will accelerate the development of new families of spintronic devices.
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Magnetically engineered spintronic sensors and memory

TL;DR: The magnetic tunnel junction (MTJ) as discussed by the authors is an example of spintronic materials in which the flow of spin-polarized electrons is manipulated by controlling, via magnetic fields, the orientation of magnetic moments in inhomogeneous magnetic thin film systems.
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Spin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory

TL;DR: In this paper, experimental and numerical results of current-driven magnetization switching in magnetic tunnel junctions were presented, and three distinct switching modes, thermal activation, dynamic reversal, and precessional process, were identified within the experimental parameter space.
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Thermodynamics of spin S = 1 / 2 antiferromagnetic uniform and alternating-exchange Heisenberg chains

TL;DR: In this paper, the magnetic susceptibility and specific heat of the Heisenberg chain were studied for the entire range $0l~\ensuremath{\alpha}l~1$ of the alternation parameter of the alternating-exchange parameter.
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Spin transfer switching in dual MgO magnetic tunnel junctions

TL;DR: In this article, a dual magnetic tunnel junction (MTJ) structure consisting of two MgO insulating barriers of different resistances, two pinned reference layers aligned antiparallel to one another, and a free layer embedded between the two barriers has been developed.