Alex Zunger

TL;DR: In this article, the electronic structure and the breathing mode relaxation for tetrahedral interstitial 3D transition atom impurities in silicon were studied in the local density approximation and it was shown that although the interstitial impurities constitute a very large perturbation locally, they interact with the surrounding crystal in the sense that they perturb the spatial distribution of electrons on the surrounding atoms only weakly.

TL;DR: In this article, the authors combine a kinetic model of MBE growth with the empirical pseudopotential band structure method to study the effects of interfacial disorder and segregation on the optical properties of InAs/GaSb superlattices.

TL;DR: In this paper, the atomistic pseudopotential many-body theory of InGaAs/GaAs addresses some important effects, including the fine-structure splittings (originating from interband spin exchange), the optical spectra of charged quantum dots and the degree of entanglement in a quantum dot molecule.

TL;DR: A Comment on the Letter by J. M. Zuo, J. C. Spence, and M. H. O'Keeffe as discussed by the authors, Phys. Rev. 61, 353 (1988).

TL;DR: In this paper, the electronic properties of this type of lattice structure in a GaInAs alloy were studied, predicting valence band splittings into distinctly polarized components, a ⩽100-meV band-gap reduction and strong, type I electron and hole confinement in the In-rich lateral channels.