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Alex Zunger

Researcher at University of Colorado Boulder

Publications -  838
Citations -  85746

Alex Zunger is an academic researcher from University of Colorado Boulder. The author has contributed to research in topics: Band gap & Electronic structure. The author has an hindex of 128, co-authored 826 publications receiving 78798 citations. Previous affiliations of Alex Zunger include Tel Aviv University & University of Wisconsin-Madison.

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Shell-Tunneling Spectroscopy of the Single-Particle Energy Levels of Insulating Quantum Dots

TL;DR: In this paper, the energy levels of CdSe quantum dots are studied by scanning tunneling spectroscopy, where the tip-dot distance of the quantum dot can be varying to switch from shell-filling to shell-tunneling.
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Al on GaAs(110) interface: Possibility of adatom cluster formation

TL;DR: In this paper, a reexamination of the experimental data and previous electronic-structure calculations on the prototype Schottky system Al/GaAs(110), together with new calculations, indicates that at low coverages and temperatures neither a covalent bond nor a metallic bond is likely to be formed between Al and the substrate.
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Lifetime and polarization of the radiative decay of excitons, biexcitons, and trions in CdSe nanocrystal quantum dots

TL;DR: In this paper, a pseudopotential configuration-interaction method was used to calculate the intrinsic lifetime and polarization of the radiative decay of single excitons, positive and negative trions, and biexcitons in CdSe nanocrystal quantum dots.
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Confinement, surface, and chemisorption effects on the optical properties of Si quantum wires

TL;DR: The calculated energy dependence of the transition lifetimes is too strong to explain the observed low-energy slow emission band in porous Si purely in terms of transitions in an ideal wire, however, an alternative model, which introduces a mixture of wires and boxes, can account for the experimental slope.
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Effects of interfacial atomic segregation and intermixing on the electronic properties of InAs/GaSb superlattices

TL;DR: In this paper, the effect of interfacial atomic mixing on the electronic structure of InAs/GaSb superlattices, including electron and hole energies and wave function localization, interband transition energies, and dipole matrix elements, was studied.