Alex Zunger

Bio: Alex Zunger is an academic researcher from University of Colorado Boulder. The author has contributed to research in topics: Band gap & Quantum dot. The author has an hindex of 128, co-authored 826 publications receiving 78798 citations. Previous affiliations of Alex Zunger include Tel Aviv University & University of Wisconsin-Madison.

Erratum: Self-consistent pseudopotential calculation of the bulk properties of Mo and W

Abstract: The bulk properties of Mo and W are calculated using the recently developed momentum-space approach for calculating total energy via a nonlocal pseudopotential. This approach avoids any shape approximation to the variational charge density (e.g., muffin tins), is fully self-consistent, and replaces the multidimensional and multicenter integrals akin to real-space representations by simple and readily convergent reciprocal-space lattice sums. We use first-principles atomic pseudopotentials which have been previously demonstrated to yield band structures and charge densities for both semiconductors and transition metals in good agreement with experiment and all-electron calculations. Using a mixed-basis representation for the crystalline wave function, we are able to accurately reproduce both the localized and itinerant features of the electronic states in these systems. These first-principles pseudopotentials, together with the self-consistent density-functional representation for both the exchange and the correlation screening, yields agreement with experiment of 0.2% in the lattice parameters, 2% and 11% for the binding energies of Mo and W, respectively, and 12% and 7% for the bulk moduli of Mo and W, respectively.

Multiple charging of InAs/GaAs quantum dots by electrons or holes : Addition energies and ground-state configurations

Abstract: Atomistic pseudopotential plus configuration interaction calculations of the energy needed to charge dots by either electrons or holes are described, and contrasted with the widely used, but highly simplified two-dimensional parabolic effective mass approximation (2D-EMA). Substantial discrepancies are found, especially for holes, regarding the stable electronic configuration and filling sequence which defies both Hund's rule and the Aufbau principle.

A molecular calculation of electronic properties of layered crystals. I. Truncated crystal approach for hexagonal boron nitride

Abstract: A truncated crystal approach is applied to the hexagonal boron nitride structure and electronic properties such as work function, different band widths, energy of band-to-band transition and cohesion energy are studied and compared with tight binding, OPW methods and experimental optical and thermochemical data. It is demonstrated that whenever the relation between one-electron energy levels of a finite molecular cluster and energy states at the Brillouin zone of the crystal are established, good results can be obtained. Properties that are not amenable to calculation by simple band theories, like energy of Frenkel pair formation, point defect states and dependence on interatomic distance of various energy states, are computed by the same method and discussed with reference to experiment.

Excitons in InP quantum dots

Abstract: The excitonic spectrum of InP quantum dots is investigated using an atomistic pseudopotential approach for the single-particle problem and a state-dependent screened Coulomb interaction for the many-body problem. Our calculations show a different energy distribution of single-particle states relative to the commonly used $\mathbf{k}\mathbf{\ensuremath{\cdot}}\mathbf{p}$ theory as well as significant parity mixing in the envelope functions, forbidden in $6\ifmmode\times\else\texttimes\fi{}6$ $\mathbf{k}\ensuremath{\cdot}\mathbf{p}$. The calculated excitonic spectrum, including seven excitons, explains well the recent experimental measurements.

Separation of one- and many-electron effects in the excitation spectra of 3d impurities in semiconductors

Abstract: We present a new multiplet theory that separates mean-field from multiplet effects in the excitation and donor-acceptor ionization spectra of localized impurities. Analysis of the experimental data for all 3d impurities in ZnO, ZnS, ZnSe, and GaP for which sufficient data exist and for the bulk Mott insulators CoO, MnO, and NiO reveals, for the first time, regular chemical trends in many-electron effects with the impurity and the host-crystal covalency and delineates the regime where one-electron theory is applicable from the region where it is not.

Ab initio molecular-dynamics simulation of the liquid-metal-amorphous-semiconductor transition in germanium.

Abstract: We present ab initio quantum-mechanical molecular-dynamics simulations of the liquid-metal--amorphous-semiconductor transition in Ge. Our simulations are based on (a) finite-temperature density-functional theory of the one-electron states, (b) exact energy minimization and hence calculation of the exact Hellmann-Feynman forces after each molecular-dynamics step using preconditioned conjugate-gradient techniques, (c) accurate nonlocal pseudopotentials, and (d) Nos\'e dynamics for generating a canonical ensemble. This method gives perfect control of the adiabaticity of the electron-ion ensemble and allows us to perform simulations over more than 30 ps. The computer-generated ensemble describes the structural, dynamic, and electronic properties of liquid and amorphous Ge in very good agreement with experiment. The simulation allows us to study in detail the changes in the structure-property relationship through the metal-semiconductor transition. We report a detailed analysis of the local structural properties and their changes induced by an annealing process. The geometrical, bonding, and spectral properties of defects in the disordered tetrahedral network are investigated and compared with experiment.

Self-interaction correction to density-functional approximations for many-electron systems

Abstract: The exact density functional for the ground-state energy is strictly self-interaction-free (i.e., orbitals demonstrably do not self-interact), but many approximations to it, including the local-spin-density (LSD) approximation for exchange and correlation, are not. We present two related methods for the self-interaction correction (SIC) of any density functional for the energy; correction of the self-consistent one-electron potenial follows naturally from the variational principle. Both methods are sanctioned by the Hohenberg-Kohn theorem. Although the first method introduces an orbital-dependent single-particle potential, the second involves a local potential as in the Kohn-Sham scheme. We apply the first method to LSD and show that it properly conserves the number content of the exchange-correlation hole, while substantially improving the description of its shape. We apply this method to a number of physical problems, where the uncorrected LSD approach produces systematic errors. We find systematic improvements, qualitative as well as quantitative, from this simple correction. Benefits of SIC in atomic calculations include (i) improved values for the total energy and for the separate exchange and correlation pieces of it, (ii) accurate binding energies of negative ions, which are wrongly unstable in LSD, (iii) more accurate electron densities, (iv) orbital eigenvalues that closely approximate physical removal energies, including relaxation, and (v) correct longrange behavior of the potential and density. It appears that SIC can also remedy the LSD underestimate of the band gaps in insulators (as shown by numerical calculations for the rare-gas solids and CuCl), and the LSD overestimate of the cohesive energies of transition metals. The LSD spin splitting in atomic Ni and $s\ensuremath{-}d$ interconfigurational energies of transition elements are almost unchanged by SIC. We also discuss the admissibility of fractional occupation numbers, and present a parametrization of the electron-gas correlation energy at any density, based on the recent results of Ceperley and Alder.

A comprehensive review of zno materials and devices

Abstract: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...