Atomic Spectra Database

Precision positioning of an object relative to a reference point is a common task in many activities of production engineering. Sensor technologies for single axis measurement, either linear or rotary, which form the fundamentals of measurement technologies for precision positioning, are reviewed. Multi-axis coordinate measurement methods such as triangulation and multilateration, as well as Cartesian and polar systems for specifying the position in a plane or three-dimensional (3D) space are then presented, followed by a discussion on traceability and standards. Some advanced applications of measurement technologies for precision positioning in manufacturing industries are also demonstrated.

Measurement technologies for precision positioning

The semiconductor industry continues to produce ever smaller devices that are ever more complex in shape and contain ever more types of materials. The ultimate sizes and functionality of these new devices will be affected by fundamental and engineering limits such as heat dissipation, carrier mobility and fault tolerance thresholds. At present, it is unclear which are the best measurement methods needed to evaluate the nanometre-scale features of such devices and how the fundamental limits will affect the required metrology. Here, we review state-of-the-art dimensional metrology methods for integrated circuits, considering the advantages, limitations and potential improvements of the various approaches. We describe how integrated circuit device design and industry requirements will affect lithography options and consequently metrology requirements. We also discuss potentially powerful emerging technologies and highlight measurement problems that at present have no obvious solution.

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Metrology for the next generation of semiconductor devices

Advances in Scanning Force Microscopy for Dimensional Metrology

Nanometre accuracy and resolution metrology over technically relevant areas is becoming a necessity for the progress of nanomanufacturing. At the National Institute of Standards and Technology, we are developing the Molecular Measuring Machine, a scanned probe microscope (SPM) and Michelson interferometer based metrology instrument, designed to achieve nanometre measurement uncertainty for point-to-point measurements over a 50 mm by 50 mm working area. The salient design features are described, along with example measurements that demonstrate the measurement capabilities so far achieved. Both long-range measurements of sub-micrometre pitch gratings over 10 mm, and short-range, high-resolution measurements of a molecular crystal lattice have been accomplished. The estimated relative measurement uncertainty so far attained for pitch measurements is 6 × 10−5, coverage factor k = 2. We have also used this instrument and scanning probe oxidation lithography for creating some simple nanometre dimension patterns that could serve as prototype calibration standards, utilizing the SPM probe tip positioning accuracy.

https://iopscience.iop.org/article/10.1088/0957-0233/16/11/001/pdf

Nanometre resolution metrology with the Molecular Measuring Machine

Accurate and traceable calibration of lateral standards (1D and 2D gratings) is a basic metrological task for nano- and microtechnology. Both the mean pitch and the uniformity of the gratings should be measured quantitatively. Although optical diffractometers are effective for measuring the mean pitch, they are not able to measure the uniformity of gratings. In this study, the calibration of gratings is performed using a metrological large range scanning probe microscope with optimized measurement strategies. Two different kinds of data evaluation methods, a gravity centre method and a Fourier transform method, have been developed and investigated. Cosine error, a significant error source of the measurement, is analysed and corrected. Calibrations on several 1D gratings have been carried out. The calibrated mean pitch values have an excellent agreement with those measured by optical diffractometry. Nevertheless, irregularities of the gratings were only deduced from the SPM results. Finally, the usage of the 1D/2D gratings for the calibration of a typical SPM is illustrated.

https://iopscience.iop.org/article/10.1088/0957-0233/18/2/S13/pdf

Accurate and traceable calibration of two-dimensional gratings

A new optical diffractometer has been developed and set up at the Physikalisch-Technische Bundesanstalt (PTB). It offers the possibility of high-accuracy calibrations of the lateral period of gratings (pitch) in the micro- and nanometre scale. The measurement principle is based on a modified Littrow configuration, where the incident and the diffracted laser beams are almost collinear. The grating is mounted on a rotary table, and a high-precision rotary encoder is used to measure its angular positions. The profiles of the diffracted laser beams are recorded by means of a line array image detector. To determine the centre positions of the imaged laser beam profiles, different analysis methods can be applied, among others a new correlation method. A variety of laser wavelengths, ranging from 266 nm to 633 nm, can be used. Due to the optional UV wavelength, the smallest measurable pitch is about 150 nm. Depending on the quality of the sample, the measurement uncertainty can be smaller than 10 pm. For two-dimensional gratings the pitch of the two main and the diagonal directions can be measured and thus, also the angle between the two main grating orientations can be determined.

https://iopscience.iop.org/article/10.1088/0957-0233/18/3/017/pdf

Multi-wavelength VIS/UV optical diffractometer for high-accuracy calibration of nano-scale pitch standards

In this contribution we demonstrate goniometric scatterometry measurements of gratings with linewidths down to 25 nm on silicon wafers with an inspection wavelength of 266 nm. For each sample, measurements have been performed in four different configurations and the obtained data have been evaluated in parallel. As results we present the reconstruction of the complete cross-section profile. We introduce a novel geometry parameterization which overcomes some limitations of the default parameterization. A co-variance analysis of the parameters is offered to indicate the soundness of the results. A qualitative comparison with cross-section scanning electron microscope (SEM) images shows excellent agreement.

Metrology of nanoscale grating structures by UV scatterometry

To test the applicability of scatterometry on EUV masks we measured a prototype EUV mask both with an EUV scatterometer and a conventional scatterometer operated at 193 nm and compared the results with AFM and CD-SEM measurements provided to us by the mask supplier. The results of both CD-SEM and EUV- and DUV scatterometry show a quite good agreement in linearity despite constant CD offsets for these different metrology tools. The influences of the multilayer and Si capping layer on top of the multilayer thickness on EUV scatterometry results have been modelled with the help of FEM based simulations. A strong correlation has been found between the thickness of the capping layer and the sidewall angle. 
In general these results demonstrate the applicability both of EUV and DUV scatterometry for the characterisation of absorber structures on EUV masks. The application of DUV scatterometry allows to omit any influence from multilayer features and is only sensitive to the absorber structure. In this way EUV and DUV scatterometry complement each other for metrology on EUV masks. For applications in process optimisation and in process control the use of a conventional VIS/DUV-scatterometer may be sufficient in many cases.

EUV and DUV scatterometry for CD and edge profile metrology on EUV masks

We measured the pitch of a 144-nm pitch, two-dimensional grid in two different laboratories. Optical Diffraction gave very high accuracy for mean pitch and Atomic Force Microscopy measured individual pitch values, gaining additional information about local pitch variation. The measurements were made traceable to the international meter. Optical diffraction gave mean value 143.928 ± 0.015 nm (95% confidence limit, per GUM). AFM gave mean value 143.895 ± 0.079 nm. Individual pitch values had standard deviation 0.55 nm and expanded uncertainty ± 1.1 nm. Mean values measured by the two methods agreed within 0.033 nm. Because this was less than the uncertainty due to random variation in the AFM results, it suggests that the AFM measuring and analysis procedures have successfully corrected all systematic errors of practical significance in microscopy. We also discuss what precision may be expected from the AFM method when it is applied to measure smaller pitches.

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Alexander Diener

Papers

Accurate and traceable calibration of two-dimensional gratings

Multi-wavelength VIS/UV optical diffractometer for high-accuracy calibration of nano-scale pitch standards

Metrology of nanoscale grating structures by UV scatterometry

EUV and DUV scatterometry for CD and edge profile metrology on EUV masks

Picometer-scale accuracy in pitch metrology by optical diffraction and atomic force microscopy