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Alexandra Boltasseva

Researcher at Purdue University

Publications -  504
Citations -  31555

Alexandra Boltasseva is an academic researcher from Purdue University. The author has contributed to research in topics: Plasmon & Metamaterial. The author has an hindex of 76, co-authored 458 publications receiving 25649 citations. Previous affiliations of Alexandra Boltasseva include Oak Ridge National Laboratory & University of Michigan.

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Planar Photonics with Metasurfaces

TL;DR: Progress in the optics of metasurfaces is reviewed and promising applications for surface-confined planar photonics components are discussed and the studies of new, low-loss, tunable plasmonic materials—such as transparent conducting oxides and intermetallics—that can be used as building blocks for metAsurfaces will complement the exploration of smart designs and advanced switching capabilities.
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Alternative Plasmonic Materials: Beyond Gold and Silver

TL;DR: This review explores different material classes for plasmonic and metamaterial applications, such as conventional semiconductors, transparent conducting oxides, perovskiteOxides, metal nitrides, silicides, germanides, and 2D materials such as graphene.
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Searching for better plasmonic materials

TL;DR: A comparative study of various materials including metals, metal alloys and heavily doped semiconductors is presented in this article, where the performance of each material is evaluated based on quality factors defined for each class of plasmonic devices.
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Searching for Better Plasmonic Materials

TL;DR: A comparative study of various materials including metals, metal alloys and heavily doped semiconductors is presented and an approach for realizing optimal plasmonic material properties for specific frequencies and applications is outlined.
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Low-Loss Plasmonic Metamaterials

TL;DR: The development of new materials for low-loss MM components and telecommunication devices is required because metals have traditionally been the material of choice for the building blocks, but they suffer from high resistive losses.