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Alexandros T. Demos

Bio: Alexandros T. Demos is an academic researcher from Applied Materials. The author has contributed to research in topics: Dielectric & Layer (electronics). The author has an hindex of 15, co-authored 60 publications receiving 1701 citations.


Papers
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Patent
21 Nov 2006
TL;DR: In this article, a remote plasma source is used to generate reactive species that clean interior surfaces of a processing chamber in the absence of RF power in the chamber, such as amorphous carbon films, barrier films comprising silicon and carbon, and low dielectric constant films.
Abstract: Methods for cleaning semiconductor processing chambers used to process carbon-containing films, such as amorphous carbon films, barrier films comprising silicon and carbon, and low dielectric constant films including silicon, oxygen, and carbon are provided. The methods include using a remote plasma source to generate reactive species that clean interior surfaces of a processing chamber in the absence of RF power in the chamber. The reactive species are generated from an oxygen-containing gas, such as O2, and/or a halogen-containing gas, such as NF3. An oxygen-based ashing process may also be used to remove carbon deposits from the interior surfaces of the chamber before the chamber is exposed to the reactive species from the remote plasma source.

268 citations

Patent
21 Apr 2004
TL;DR: In this article, a method of depositing a low dielectric constant film on a substrate and post-treating the low-dielectric-constant film is provided.
Abstract: A method of depositing a low dielectric constant film on a substrate and post-treating the low dielectric constant film is provided. The post-treatment includes rapidly heating the low dielectric constant film to a desired high temperature and then rapidly cooling the low dielectric constant film such that the low dielectric constant film is exposed to the desired high temperature for about five seconds or less. In one aspect, the post-treatment also includes exposing the low dielectric constant film to an electron beam treatment and/or UV radiation.

255 citations

Patent
08 Sep 2003
TL;DR: In this article, a method for depositing a thin film on a substrate in a process chamber with reduced incidence of plasma charge damage is described. But the method is not suitable for the case of high temperature.
Abstract: A method is provided for depositing a thin film on a substrate in a process chamber with reduced incidence of plasma charge damage. A process gas containing a precursor gases suitable for forming a plasma is flowed into a process chamber, and a plasma is generated from the process gas to deposit the thin film on the substrate. The precursor gases are flowed into the process chamber such that the thin film is deposited at the center of the substrate more rapidly than at an edge of the substrate.

166 citations

Patent
21 Oct 2011
TL;DR: In this paper, an improved method for depositing an ultra low dielectric constant film stack is provided, which reduces a thickness of an oxide adhesion layer in the ultra low Dielectric film stack, thereby lowering the thickness non-uniformity of the film stack to less than 2%.
Abstract: An improved method for depositing an ultra low dielectric constant film stack is provided. Embodiments of the invention minimize k (dielectric constant) impact from initial stages of depositing the ultra low dielectric constant film stack by reducing a thickness of an oxide adhesion layer in the ultra low dielectric film stack, thereby lowering the thickness non-uniformity of the film stack to less than 2%. The improved process deposits the oxide adhesion layer and the bulk layer in the ultra low dielectric film stack at lower deposition rate and lower plasma density in combination with higher total flow rate, resulting in better packing/ordering of the co-deposited species during film deposition which causes higher mechanical strength and lower porosity.

150 citations

Patent
29 Sep 2011
TL;DR: In this article, an ultraviolet processing chamber defining a processing region, a substrate support, a window disposed between a UV radiation source and substrate support and a transparent showerhead disposed within the processing region between the window and the substrate support was described.
Abstract: Embodiments of the invention generally provide apparatuses and methods for controlling the gas flow profile within a processing chamber. In one embodiment, a processing tool includes an ultraviolet processing chamber defining a processing region, a substrate support, a window disposed between a UV radiation source and the substrate support, and a transparent showerhead disposed within the processing region between the window and the substrate support and having one or more transparent showerhead passages between upper and lower processing regions. The processing tool also includes a gas distribution ring having one or more gas distribution ring passages between a gas distribution ring inner channel and the upper processing region and a gas outlet ring positioned below the gas distribution ring, the gas outlet ring having one or more gas outlet passages between a gas outlet ring inner channel within the gas outlet ring and the lower processing region.

144 citations


Cited by
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Patent
01 Aug 2008
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

1,501 citations

Patent
16 Feb 2005
TL;DR: In this article, a bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the booster pump to prevent the exhaust gas from diffusing back to the inside of a process chamber.
Abstract: Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

644 citations

Patent
26 Oct 2004
TL;DR: In this paper, a silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential deposition/anneal technique, and the layer is then annealed, ideally at a moderate temperature, to remove water and thereby fully densify the film.
Abstract: A silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential deposition/anneal technique. The deposited layer thickness is insufficient to prevent substantially complete penetration of annealing process agents into the layer and migration of water out of the layer. The dielectric layer is then annealed, ideally at a moderate temperature, to remove water and thereby fully densify the film. The deposition and anneal processes are then repeated until a desired dielectric film thickness is achieved.

431 citations

Patent
30 May 2007
TL;DR: In this paper, the authors described methods of depositing a silicon oxide layer on a substrate, which may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber and introducing the atomic oxygen precursors into the chamber.
Abstract: Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.

380 citations

Patent
29 Mar 2007
TL;DR: In this paper, a method of forming a layer on a substrate in a chamber, wherein the substrate has at least one formed feature across its surface, is provided, which includes exposing the substrate to a silicon-containing precursor in the presence of a plasma to deposit a layer, treating the deposited layer with a plasma, and repeating the exposing and treating until a desired thickness of the layer is obtained.
Abstract: A method of forming a layer on a substrate in a chamber, wherein the substrate has at least one formed feature across its surface, is provided. The method includes exposing the substrate to a silicon-containing precursor in the presence of a plasma to deposit a layer, treating the deposited layer with a plasma, and repeating the exposing and treating until a desired thickness of the layer is obtained. The plasma may be generated from an oxygen-containing gas.

379 citations