Hybrid quantum circuits combine two or more physical systems, with the goal of harnessing the advantages and strengths of the different systems in order to better explore new phenomena and potentially bring about novel quantum technologies. This article presents a brief overview of the progress achieved so far in the field of hybrid circuits involving atoms, spins, and solid-state devices (including superconducting and nanomechanical systems). How these circuits combine elements from atomic physics, quantum optics, condensed matter physics, and nanoscience is discussed, and different possible approaches for integrating various systems into a single circuit are presented. In particular, hybrid quantum circuits can be fabricated on a chip, facilitating their future scalability, which is crucial for building future quantum technologies, including quantum detectors, simulators, and computers.

/pdf/hybrid-quantum-circuits-superconducting-circuits-interacting-52djng19hs.pdf

Hybrid quantum circuits: Superconducting circuits interacting with other quantum systems

Recently, films created by incorporating metallic nanoparticles into organic or polymeric materials have demonstrated electrical bistability, as well as the memory effect, when subjected to an electrical bias. Organic and polymeric digital memory devices based on this bistable electronic behavior have emerged as a viable technology in the field of organic electronics. These devices exhibit fast response speeds and can form multiple-layer stacking structures, demonstrating that organic memory devices possess a high potential to become flexible, ultrafast, and ultrahigh-density memory devices. This behavior is believed to be related to charge storage in the organic or polymer film, where devices are able to exhibit two different states of conductivity often separated by several orders of magnitude. By defining the two states as “1” and “0”, it is now possible to create digital memory devices with this technology. This article reviews electrically bistable devices developed in our laboratory. Our research has stimulated strong interest in this area worldwide. The research by other laboratories is reviewed as well.

/pdf/electrical-switching-and-bistability-in-organic-polymeric-2v12vfkf1h.pdf

Electrical Switching and Bistability in Organic/Polymeric Thin Films and Memory Devices

Recently, strongly modulated photonic crystals, fabricated by the state-of-the-art semiconductor nanofabrication process, have realized various novel optical properties. This paper describes the way in which they differ from other optical media, and clarifies what they can do. In particular, three important issues are considered: light confinement, frequency dispersion and spatial dispersion. First, I describe the latest status and impact of ultra-strong light confinement in a wavelength-cubic volume achieved in photonic crystals. Second, the extreme reduction in the speed of light is reported, which was achieved as a result of frequency dispersion management. Third, strange negative refraction in photonic crystals is introduced, which results from their unique spatial dispersion, and it is clarified how this leads to perfect imaging. The last two sections are devoted to applications of these novel properties. First, I report the fact that strong light confinement and huge light–matter interaction enhancement make strongly modulated photonic crystals promising for on-chip all-optical processing, and present several examples including all-optical switches/memories and optical logics. As a second application, it is shown that the strong light confinement and slow light in strongly modulated photonic crystals enable the adiabatic tuning of light, which leads to various novel ways of controlling light, such as adiabatic frequency conversion, efficient optomechanics systems, photon memories and photons pinning.

https://iopscience.iop.org/article/10.1088/0034-4885/73/9/096501/pdf

Manipulating light with strongly modulated photonic crystals

https://poggiolab.unibas.ch/full/2012PootPR.pdf

Mechanical systems in the quantum regime

http://people.bu.edu/parkhs/Papers/eomPR2011.pdf

Nanomechanical resonators and their applications in biological/chemical detection: Nanomechanics principles

A memory device includes a mechanical element that exhibits distinct bistable states under amplitude modulation. The states are dynamically bistable or multi-stable with the application of a drive signal of a given frequency. The natural resonance of the element in conjunction with a hysteretic effect produces distinct states over a specific frequency range. Devices with multiple elements that respond to different frequency ranges provided on a common contact are formed with improved density. The devices may be excited and read with magnetomotive, capacitive, piezoelectric and/or optical methods. The devices may be planar oriented or out of plane oriented to permit three dimensional memory structures. DC biases may be used to shift frequency responses to permit an alternate method for differentiating states of the element.

Controllable nanomechanical memory element

We report the realization of a completely controllable high-speed nanomechanical memory element fabricated from single-crystal silicon wafers. This element consists of a doubly-clamped suspended nanomechanical beam structure, which can be made to switch controllably between two stable and distinct states at a single frequency in the megahertz range. Because of their sub-micron size and high normal-mode frequencies, these nanomechanical memory elements offer the potential to rival the current state-of-the-art electronic data storage and processing.

A controllable nanomechanical memory element

We report the observation of discrete displacement of nanomechanical oscillators with gigahertz-range resonance frequencies at millikelvin temperatures. The oscillators are nanomachined single-crystal structures of silicon, designed to provide two distinct sets of coupled elements with very low and very high frequencies. With this novel design, femtometer-level displacement of the frequency-determining element is amplified into collective motion of the entire micron-sized structure. The observed discrete response possibly results from energy quantization at the onset of the quantum regime in these macroscopic nanomechanical oscillators.

Evidence for quantized displacement in macroscopic nanomechanical oscillators.

We report actuation and detection of gigahertz-range resonance frequencies in nanocrystalline diamond mechanical resonators. High order transverse vibration modes are measured in coupled-beam resonators exhibiting frequencies up to 1.441GHz. The cantilever-array design of the resonators translates the gigahertz-range resonant motion of micron-long cantilever elements to the displacement of the central supporting structure. Use of nanocrystalline diamond further increases the frequency compared to single crystal silicon by a factor of 3. High clamping losses usually associated with micron-sized straight beams are suppressed in the periodic geometry of our resonators, allowing for high quality factors exceeding 20 000 above 500MHz.

High quality factor gigahertz frequencies in nanomechanical diamond resonators

Electrons and other fundamental particles have an intrinsic angular momentum called spin. A change in the spin state of such a particle is therefore equivalent to a mechanical torque. This spin-induced torque is central to our understanding of experiments ranging from the measurement of the angular momentum of photons and the g-factor of metals to magnetic resonance and magnetization reversal in magnetic multilayers. When a spin-polarized current passes through a metallic nanowire in which one half is ferromagnetic and the other half is nonmagnetic, the spins of the itinerant electrons are 'flipped' at the interface between the two regions to produces a torque. Here, we report direct measurement of this mechanical torque in an integrated nanoscale torsion oscillator, and measurements of the itinerant electron spin polarization that could yield new information on the itinerancy of the d-band electrons. The unprecedented torque sensitivity of 1 x 10(-22) N-m Hz(-1/2) may have applications in spintronics and precision measurements of charge-parity-violating forces, and might also enable experiments on the untwisting of DNA and torque-generating molecules.

Alexei Gaidarzhy

Papers

Controllable nanomechanical memory element

A controllable nanomechanical memory element

Evidence for quantized displacement in macroscopic nanomechanical oscillators.

High quality factor gigahertz frequencies in nanomechanical diamond resonators

Nanomechanical detection of itinerant electron spin flip.