A
Alexei V. Fedorov
Researcher at Lawrence Berkeley National Laboratory
Publications - 202
Citations - 19285
Alexei V. Fedorov is an academic researcher from Lawrence Berkeley National Laboratory. The author has contributed to research in topics: Angle-resolved photoemission spectroscopy & Topological insulator. The author has an hindex of 60, co-authored 187 publications receiving 17653 citations. Previous affiliations of Alexei V. Fedorov include Associated Universities, Inc. & Free University of Berlin.
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Journal ArticleDOI
Substrate-induced bandgap opening in epitaxial graphene
Shuyun Zhou,Gey-Hong Gweon,Gey-Hong Gweon,Alexei V. Fedorov,Phillip N. First,W. A. de Heer,D.-H. Lee,Francisco Guinea,A. H. Castro Neto,Alessandra Lanzara,Alessandra Lanzara +10 more
TL;DR: It is shown that when graphene is epitaxially grown on SiC substrate, a gap of approximately 0.26 eV is produced and it is proposed that the origin of this gap is the breaking of sublattice symmetry owing to the graphene-substrate interaction.
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A tunable topological insulator in the spin helical Dirac transport regime
David Hsieh,Yuqi Xia,Dong Qian,Lewis Wray,Jan Hugo Dil,Jan Hugo Dil,Fabian Meier,Fabian Meier,Jürg Osterwalder,Luc Patthey,Joseph Checkelsky,Nai Phuan Ong,Alexei V. Fedorov,Hsin Lin,Arun Bansil,D. Grauer,Yew San Hor,Robert J. Cava,M. Z. Hasan +18 more
TL;DR: The results reveal a spin-momentum locked Dirac cone carrying a non-trivial Berry’s phase that is nearly 100 per cent spin-polarized, which exhibits a tunable topological fermion density in the vicinity of the Kramers point and can be driven to the long-sought topological spin transport regime.
Journal ArticleDOI
Substrate-induced band gap opening in epitaxial graphene
Shuyun Zhou,Gey-Hong Gweon,Alexei V. Fedorov,P. N. First,W. A. de Heer,D.-H. Lee,Francisco Guinea,A. H. Castro Neto,Alessandra Lanzara +8 more
TL;DR: In this article, the authors show that when epitaxially grown on the SiC substrate, a gap of ~ 0.26 is produced and this gap decreases as the sample thickness increases and eventually approaches zero when the number of layers exceeds four.
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Observation of time-reversal-protected single-Dirac-cone topological-insulator states in Bi2Te3 and Sb2Te3
David Hsieh,Yuqi Xia,Dong Qian,Lewis Wray,Fabian Meier,Fabian Meier,Jan Hugo Dil,Jan Hugo Dil,Jürg Osterwalder,Luc Patthey,Alexei V. Fedorov,Hsin Lin,Arun Bansil,D. Grauer,Yew San Hor,Robert J. Cava,M. Z. Hasan +16 more
TL;DR: It is directly shown that Bi2Te3 is a large spin-orbit-induced indirect bulk band gap semiconductor whose surface is characterized by a single topological spin-Dirac cone, and it is demonstrated that the dynamics of spin- Dirac fermions can be controlled through systematic Mn doping.
Journal ArticleDOI
Chiral magnetic effect in ZrTe 5
Qiang Li,Dmitri E. Kharzeev,Dmitri E. Kharzeev,Cheng Zhang,Yuan Huang,Ivo Pletikosic,Ivo Pletikosic,Alexei V. Fedorov,Ruidan Zhong,John Schneeloch,G. D. Gu,Tonica Valla +11 more
TL;DR: A magnetotransport study of zirconium pentatelluride, ZrTe5, has been carried out in this paper, which reveals evidence for a chiral magnetic effect, a striking macroscopic manifestation of the quantum and relativistic nature of Weyl semimetals.