Author
Alfonso Muoz
Other affiliations: University of La Laguna
Bio: Alfonso Muoz is an academic researcher from Autonomous University of Madrid. The author has contributed to research in topics: Discontinuity (geotechnical engineering) & Heterojunction. The author has an hindex of 2, co-authored 2 publications receiving 25 citations. Previous affiliations of Alfonso Muoz include University of La Laguna.
Papers
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21 citations
TL;DR: This work responds to the criticisms of Van de Walle and Martin in the preceding Comment and presents new calculations of the valence-band offsets.
Abstract: We respond to the criticisms of Van de Walle and Martin in the preceding Comment and present new calculations of the valence-band offsets.
4 citations
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TL;DR: In this paper, the occurrence of quantum dipoles at layered materials semiconductor heterointerfaces was investigated by photoemission spectroscopy (PES), and the valence band offset was determined by careful evaluation of the PES data as a function of the film thickness.
Abstract: The occurrence of quantum dipoles at layered materials semiconductor heterointerfaces was investigated by photoemission spectroscopy (PES). Due to the unique properties of layered compounds the prepared interfaces are essentially free of the structural problems known from the usually investigated heterosystems composed of III–V, IV or II–VI materials allowing the detailed investigation of electronic phenomena at the interfaces. We investigated heterostructures composed of epitaxial layers of SnS2 and SnSe2 on different single crystalline layered chalcogenide substrates (WSe2, MoS2, MoTe2, and GaSe). The epilayers were grown by van der Waals epitaxy (vdWe) on the (0001) plane of the substrate crystals. For every system the valence band offset was determined by careful evaluation of the PES data as a function of the film thickness. Using published values for the band gaps and the experimentally determined work functions and surface potentials the band lineup for each system was determined. The band offsets ...
198 citations
TL;DR: In this paper, the effect of strain on the band lineups alignments in strained heterostructures is discussed deeply, and the attention is focused on the most important results obtained by several groups in the characterization of semiconductor heterometructures using the following structural SR techniques.
103 citations
TL;DR: The analysis provides a new estimate of the band gap of zinc Blende CdSe as well as the band offsets in zinc blende and wurtzite C dSe, CdS, and ZnSe, and it is analyzed within an effective mass model.
Abstract: The interband and intraband spectra of colloidal II-VI CdS and CdSe quantum dot cores and CdS∕ZnSe, CdS∕CdSe, CdSe∕CdS, and CdSe∕ZnSe core/shell systems are reported. Infrared absorption peaks between 0.5 and 0.2eV are observed. The slope of the intraband energy versus the first interband absorption feature is characteristic of the relative band alignments of the materials constituting the core and the shell and it is analyzed within an effective mass model. The analysis provides a new estimate of the band gap of zinc blende CdSe as well as the band offsets in zinc blende and wurtzite CdSe, CdS, and ZnSe.
89 citations
TL;DR: In this article, a perspective of the theoretical effort made to understand semiconductor interface formation within the induced density of interface states model is presented, and the formation of the junction as a function of the surface coverage is analyzed and shown to be completed with the deposition of one or two layers.
30 citations
TL;DR: In this article, angle-dependent UPS measurements at two different photon energies demonstrate that the dispersion of the valence band (VB) must be checked carefully in order to find the true position of the VB maximum in the Brillouin zone.
Abstract: We have investigated the valence band offset (ΔE VBO ) of the molecular beam epitaxially grown heterostructure HgTe/CdTe(001) by k-resolved ultraviolet (UPS) and X-ray (XPS) photoemission. Our angle-dependent UPS measurements at two different photon energies demonstrate that the dispersion of the valence band (VB) must be checked carefully in order to find the true position of the VB maximum in the Brillouin zone. With this information the valence band discontinuity was determined as (0.53 ± 0.03) eV, which is different from previously found photoemission values but now agrees well with magneto-optical investigations. In addition, we have determined the energy gap of CdTe(001) and HgTe(001) by a combination of UV and inverse photoemission. The energy gap of CdTe is determined to (1.57 ± 0.06) eV and that for HgTe as (0.0 ± 0.06) eV. We therefore conclude that HgTe is a semi-metal with inverted band structure in agreement with other results.
28 citations