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Algirdas Sužiedėlis
Researcher at Vilnius Gediminas Technical University
Publications - 67
Citations - 218
Algirdas Sužiedėlis is an academic researcher from Vilnius Gediminas Technical University. The author has contributed to research in topics: Microwave & Photoluminescence. The author has an hindex of 5, co-authored 61 publications receiving 151 citations.
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Journal ArticleDOI
Cesium-Containing Triple Cation Perovskite Solar Cells
Steponas Ašmontas,Aurimas Čerškus,Jonas Gradauskas,Asta Grigucevičienė,Konstantinas Leinartas,A. Lučun,Kazimieras Petrauskas,Algirdas Selskis,Algirdas Sužiedėlis,Edmundas Širmulis,Remigijus Juškėnas +10 more
TL;DR: In this paper, optical transmittance measurements of perovskite layers containing different cesium concentrations (0, 15%) were carried out on purpose to evaluate the utility of the layers for the fabrication of monolithic perovsite/silicon tandem solar cells.
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Hot carrier impact on photovoltage formation in solar cells
Steponas Ašmontas,Jonas Gradauskas,Algirdas Sužiedėlis,A. Šilėnas,E. Sirmulis,V. Švedas,V. Vaičikauskas,O. Žalys +7 more
TL;DR: In this article, the photovoltaic effect in a GaAs p-n junction exposed to short laser pulses of the 1.06-3.0μm spectral range is investigated experimentally.
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Enhanced exciton photoluminescence in the selectively Si-doped GaAs/AlxGa1−xAs heterostructures
Jurgis Kundrotas,Aurimas Čerškus,Viktorija Nargelienė,Algirdas Sužiedėlis,Steponas Ašmontas,Jonas Gradauskas,A. Johannessen,Erik A. Johannessen,Vladimir Umansky +8 more
TL;DR: In this article, the authors examined the photoluminescence spectra of selectively Si-doped GaAs/AlxGa1−xAs heterostructures and discussed possible mechanisms of carrier recombination.
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Photoluminescence characterisation of GaAs/AlGaAs structures designed for microwave and terahertz detectors
Aurimas Čerškus,Jurgis Kundrotas,Viktorija Nargelienė,Algirdas Sužiedėlis,Steponas Ašmontas,Jonas Gradauskas,A. Johannessen,Erik A. Johannessen +7 more
TL;DR: The photoluminescence spectra of GaAs/AlGaAs structures designed for microwave and terahertz detectors were investigated in this article, where possible mechanisms of carrier recombination were discussed and certain emphasis was put on the up to 20 times enhancement of the PL intensity observed in these detector structures.
Journal ArticleDOI
Photovoltage formation across GaAs p–n junction under illumination of intense laser radiation
S. Ašmontas,Jonas Gradauskas,Algirdas Sužiedėlis,A. Šilėnas,Edmundas Širmulis,Viktoras Vaičikauskas,Vytautas Vaičiūnas,O. Žalys,Leonid Fedorenko,Lev Petrovich Bulat +9 more
TL;DR: In this article, the photovoltaic effect in GaAs p-n junction under laser excitation at 10.6 and 1.06μm wavelengths has been investigated experimentally.