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Table Of Integrals Series And Products

This paper analyzes, compares, and contrasts technical challenges, methods, and the performance of text detection and recognition research in color imagery It summarizes the fundamental problems and enumerates factors that should be considered when addressing these problems Existing techniques are categorized as either stepwise or integrated and sub-problems are highlighted including text localization, verification, segmentation and recognition Special issues associated with the enhancement of degraded text and the processing of video text, multi-oriented, perspectively distorted and multilingual text are also addressed The categories and sub-categories of text are illustrated, benchmark datasets are enumerated, and the performance of the most representative approaches is compared This review provides a fundamental comparison and analysis of the remaining problems in the field

Text Detection and Recognition in Imagery: A Survey

This paper presents results obtained from monitoring a 1.72 kWp photovoltaic system installed on a flat roof of a 12 m high building in Dublin, Ireland (latitude 53.4°N and longitude 6.3°E). The system was monitored between November 2008 and October 2009 and all the electricity generated was fed into the low voltage supply to the building. Monthly average daily and annual performance parameters of the PV system evaluated include: final yield, reference yield, array yield, system losses, array capture losses, cell temperature losses, PV module efficiency, system efficiency, inverter efficiency, performance ratio and capacity factor. The maximum solar radiation, ambient temperature and PV module temperature recorded were 1241 W/m2 in March, 29.5 °C and 46.9 °C in June respectively. The annual total energy generated was 885.1 kW h/kWp while the annual average daily final yield, reference yield and array yield were 2.41 kW h/kWp/day, 2.85 kW h/kWp/day and 2.62 kW h/kWp/day respectively. The annual average daily PV module efficiency, system efficiency and inverter efficiency were 14.9%, 12.6% and 89.2% respectively while the annual average daily performance ratio and capacity factor were 81.5% and 10.1% respectively. The annual average daily system losses, capture losses and cell temperature losses were 0.23 h/day, 0.22 h/day and 0.00 h/day respectively. Comparison of this system with other systems in different locations showed that the system had the highest annual average daily PV module efficiency, system efficiency and performance ratio of 14.9%, 12.6% and 81.5% respectively. The PV system’s annual average daily final yield of 2.4 kW h/kWp/day is higher than those reported in Germany, Poland and Northern Ireland. It is comparable to results from some parts of Spain but it is lower than the reported yields in most parts of Italy and Spain. Despite low insolation levels, high average wind speeds and low ambient temperature improve Ireland’s suitability.

Measured Performance of a 1.72 kW Rooftop Grid Connected Photovoltaic System in Ireland

This paper presents a pseudo-2-D surface potential model for the double-gate tunnel field-effect transistor (DG-TFET). Analytical expressions are derived for the 2-D potential, electric field, and generation rate, and used to numerically extract the tunneling current. The model predicts the device characteristics for a large range of parameters and allows gaining insight on the device physics. The depletion regions induced inside the source and drain are included in the solution, and we show that these regions become critical when scaling the device length. The fringing field effect from the gates on these regions is also included. The validity of the model is tested for devices scaled to 10-nm length with SiO2 and high-? dielectrics by comparison to 2-D finite-element simulations.

Pseudo-Two-Dimensional Model for Double-Gate Tunnel FETs Considering the Junctions Depletion Regions

This expanded and thoroughly revised edition of Thomas H. Lee's acclaimed guide to the design of gigahertz RF integrated circuits features a completely new chapter on the principles of wireless systems. The chapters on low-noise amplifiers, oscillators and phase noise have been significantly expanded as well. The chapter on architectures now contains several examples of complete chip designs that bring together all the various theoretical and practical elements involved in producing a prototype chip. First Edition Hb (1998): 0-521-63061-4 First Edition Pb (1998); 0-521-63922-0

The Design of CMOS Radio-Frequency Integrated Circuits: RF CIRCUITS THROUGH THE AGES

A new analytical model for the surface potential and threshold voltage of a surrounding-gate MOSFET with dual-material gate is presented to investigate the short-channel effects. The model results accurately predict the threshold-voltage "roll off" for channel lengths even less than 90nm. The accuracy of the model results is verified using two-dimensional simulation.

https://web.iitd.ac.in/~mamidala/HTMLobj-616/TED_04_06b.pdf

New dual-material SG nanoscale MOSFET: analytical threshold-voltage model

A new analytical model for the surface potential and the threshold voltage of a silicon-on-insulator (SOI) MOSFET with electrically induced shallow source/drain (S/D) junctions is presented to investigate the short-channel effects (SCEs). Dividing the SOI MOSFETs silicon thin film into three zones, the surface potential is obtained by solving the two-dimensional Poissons equation. Our model includes the effects of the body doping concentration, the lengths of the side and main gates and their work functions, applied drain and substrate biases, the thickness of the gate and buried oxide, and also the silicon thin film. Our model results reaffirm that the application of induced S/D extensions to the SOI MOSFET will successfully control the SCEs for channel lengths even less than 50 nm. Two-dimensional simulation results are used to verify the validity of this model, and quite good agreements are obtained for various cases.

Two-dimensional analytical threshold voltage model of nanoscale fully depleted SOI MOSFET with electrically induced S/D extensions

In this paper, compact all-optical XOR and XNOR gates based on different configurations of metal–insulator–metal plasmonic ring resonators (PRRs) have been proposed. Square and octagon-shaped rings have been used in this case. The logic gates have been simulated using the two-dimensional finite-difference time-domain numerical method, with a  conventional perfectly matched layer as the absorbing boundary condition of the area under simulation. The phenomenon of Fano resonance is employed by the proposed gates to excite ON/OFF states. As a result, a large value of contrast ratio (C.R.) is obtained. The results show that the values of C.R. of XNOR and XOR gates for square-shaped PRR are 22.66 and 22.9 dB, respectively and the values of C.R. of XNOR and XOR gates for octagon-shaped PRR are 23.01 and 23.52 dB, respectively. Also, it is shown that the octagon-shaped gates have higher transmission ratios than other proposed configurations. The proposed optical logic gates can be used as key components in optical communications and for designing compact plasmonic devices.

Design of all-optical XOR and XNOR logic gates based on Fano resonance in plasmonic ring resonators

Synthesis and design of a wideband and reconfigurable filtering slot antenna (FSA) is presented in this letter. This is achieved by using an open/short-ended interdigital E-shaped resonator through two integrated PIN diodes within its structure. A rectangular slot antenna with M-shaped radiating stub is excited by the resonator via an inset coupling structure. The slot antenna also performs the filter last stage, and the inset structure can be acted in the filter as the admittance inverter. The circuit model of the structure is analyzed, and the synthesis process is discussed using design curves and formulation. The reconfigurable FSA is designed at center frequencies of 5.2/5.5 GHz with 6%/17% fractional bandwidth and Butterworth broadside antenna gain response when both diodes are on/off , respectively. Compared to the conventional antenna, the filtering antenna obtains good frequency skirt selectivity, flatter passband responses, and wider bandwidth.

A Wideband and Reconfigurable Filtering Slot Antenna

In this paper, a novel double-gate (DG) MOSFET in which the top and bottom gates consist of three laterally contacting material with different work functions is proposed. Using two-dimensional (2-D) device simulation, improvement of short channel effects such as drain-induced barrier lowering (DIBL), hot-carrier effects and channel length modulation (CLM) are investigated and compared with the dual material double-gate MOSFET and conventional DG MOSFET. This structure exhibits significantly improved short channel effects (SCEs) when compared with the conventional DG MOSFET.

Ali A. Orouji

Papers

New dual-material SG nanoscale MOSFET: analytical threshold-voltage model

Two-dimensional analytical threshold voltage model of nanoscale fully depleted SOI MOSFET with electrically induced S/D extensions

Design of all-optical XOR and XNOR logic gates based on Fano resonance in plasmonic ring resonators

A Wideband and Reconfigurable Filtering Slot Antenna

Nanoscale Triple Material Double Gate (TM-DG) MOSFET for Improving Short Channel Effects