Ali Hallal

TL;DR: First-principles calculations of spin-dependent properties in graphene induced by its interaction with a nearby magnetic insulator (europium oxide, EuO) point toward the possible engineering of spin gating by the proximity effect at a relatively high temperature, which stands as a hallmark for future all-spin information processing technologies.

TL;DR: In this article, the authors demonstrate that significant DMI can be obtained in a series of Janus monolayers of manganese dichalcogenides MnXY (X/Y = S, Se, Te, X ≠ Y) in which the difference between X and Y on the opposites sides of Mn breaks the inversion symmetry.

TL;DR: These findings point toward possibilities to engineer graphene/ferromagnetic metal heterostructures with giant magnetic anisotropy more than 20-times larger compared to conventional multilayers, which constitutes a hallmark for future graphene and traditional spintronic technologies.

TL;DR: In this article, the authors elucidate microscopic mechanisms of perpendicular magnetic anisotropy (PMA) in Fe/MgO magnetic tunnel junctions through evaluation of orbital and layer resolved contributions into the total PMA value.

TL;DR: It is found that interfacial PMA in the three-layer structures comes from both the MgO/CoFe and CoFe/capping layer interfaces, which can be analyzed separately, and the variation of PMA with different capping materials is attributed to the different hybridizations of both d and p orbitals via spin- orbits.