Graphene is very popular because of its many fascinating properties, but its lack of an electronic bandgap has stimulated the search for 2D materials with semiconducting character. Transition metal dichalcogenides (TMDCs), which are semiconductors of the type MX2, where M is a transition metal atom (such as Mo or W) and X is a chalcogen atom (such as S, Se or Te), provide a promising alternative. Because of its robustness, MoS2 is the most studied material in this family. TMDCs exhibit a unique combination of atomic-scale thickness, direct bandgap, strong spin–orbit coupling and favourable electronic and mechanical properties, which make them interesting for fundamental studies and for applications in high-end electronics, spintronics, optoelectronics, energy harvesting, flexible electronics, DNA sequencing and personalized medicine. In this Review, the methods used to synthesize TMDCs are examined and their properties are discussed, with particular attention to their charge density wave, superconductive and topological phases. The use of TMCDs in nanoelectronic devices is also explored, along with strategies to improve charge carrier mobility, high frequency operation and the use of strain engineering to tailor their properties. Two-dimensional transition metal dichalcogenides (TMDCs) exhibit attractive electronic and mechanical properties. In this Review, the charge density wave, superconductive and topological phases of TMCDs are discussed, along with their synthesis and applications in devices with enhanced mobility and with the use of strain engineering to improve their properties.

2D transition metal dichalcogenides

Millimeter wave (mmWave) signals experience orders-of-magnitude more pathloss than the microwave signals currently used in most wireless applications and all cellular systems. MmWave systems must therefore leverage large antenna arrays, made possible by the decrease in wavelength, to combat pathloss with beamforming gain. Beamforming with multiple data streams, known as precoding, can be used to further improve mmWave spectral efficiency. Both beamforming and precoding are done digitally at baseband in traditional multi-antenna systems. The high cost and power consumption of mixed-signal devices in mmWave systems, however, make analog processing in the RF domain more attractive. This hardware limitation restricts the feasible set of precoders and combiners that can be applied by practical mmWave transceivers. In this paper, we consider transmit precoding and receiver combining in mmWave systems with large antenna arrays. We exploit the spatial structure of mmWave channels to formulate the precoding/combining problem as a sparse reconstruction problem. Using the principle of basis pursuit, we develop algorithms that accurately approximate optimal unconstrained precoders and combiners such that they can be implemented in low-cost RF hardware. We present numerical results on the performance of the proposed algorithms and show that they allow mmWave systems to approach their unconstrained performance limits, even when transceiver hardware constraints are considered.

Spatially Sparse Precoding in Millimeter Wave MIMO Systems

Almost all mobile communication systems today use spectrum in the range of 300 MHz-3 GHz. In this article, we reason why the wireless community should start looking at the 3-300 GHz spectrum for mobile broadband applications. We discuss propagation and device technology challenges associated with this band as well as its unique advantages for mobile communication. We introduce a millimeter-wave mobile broadband (MMB) system as a candidate next generation mobile communication system. We demonstrate the feasibility for MMB to achieve gigabit-per-second data rates at a distance up to 1 km in an urban mobile environment. A few key concepts in MMB network architecture such as the MMB base station grid, MMB interBS backhaul link, and a hybrid MMB + 4G system are described. We also discuss beamforming techniques and the frame structure of the MMB air interface.

An introduction to millimeter-wave mobile broadband systems

Millimeter-wave (mmW) frequencies between 30 and 300 GHz are a new frontier for cellular communication that offers the promise of orders of magnitude greater bandwidths combined with further gains via beamforming and spatial multiplexing from multielement antenna arrays. This paper surveys measurements and capacity studies to assess this technology with a focus on small cell deployments in urban environments. The conclusions are extremely encouraging; measurements in New York City at 28 and 73 GHz demonstrate that, even in an urban canyon environment, significant non-line-of-sight (NLOS) outdoor, street-level coverage is possible up to approximately 200 m from a potential low-power microcell or picocell base station. In addition, based on statistical channel models from these measurements, it is shown that mmW systems can offer more than an order of magnitude increase in capacity over current state-of-the-art 4G cellular networks at current cell densities. Cellular systems, however, will need to be significantly redesigned to fully achieve these gains. Specifically, the requirement of highly directional and adaptive transmissions, directional isolation between links, and significant possibilities of outage have strong implications on multiple access, channel structure, synchronization, and receiver design. To address these challenges, the paper discusses how various technologies including adaptive beamforming, multihop relaying, heterogeneous network architectures, and carrier aggregation can be leveraged in the mmW context.

Millimeter-Wave Cellular Wireless Networks: Potentials and Challenges

Communication at millimeter wave (mmWave) frequencies is defining a new era of wireless communication. The mmWave band offers higher bandwidth communication channels versus those presently used in commercial wireless systems. The applications of mmWave are immense: wireless local and personal area networks in the unlicensed band, 5G cellular systems, not to mention vehicular area networks, ad hoc networks, and wearables. Signal processing is critical for enabling the next generation of mmWave communication. Due to the use of large antenna arrays at the transmitter and receiver, combined with radio frequency and mixed signal power constraints, new multiple-input multiple-output (MIMO) communication signal processing techniques are needed. Because of the wide bandwidths, low complexity transceiver algorithms become important. There are opportunities to exploit techniques like compressed sensing for channel estimation and beamforming. This article provides an overview of signal processing challenges in mmWave wireless systems, with an emphasis on those faced by using MIMO communication at higher carrier frequencies.

An Overview of Signal Processing Techniques for Millimeter Wave MIMO Systems

Silicon integrated circuit spiral inductors and transformers are analyzed using electromagnetic analysis. With appropriate approximations, the calculations are reduced to electrostatic and magnetostatic calculations. The important effects of substrate loss are included in the analysis. Classic circuit analysis and network analysis techniques are used to derive two-port parameters from the circuits. From two-port measurements, low-order, frequency-independent lumped circuits are used to model the physical behavior over a broad-frequency range. The analysis is applied to traditional square and polygon inductors and transformer structures as well as to multilayer metal structures and coupled inductors. A custom computer-aided-design tool called ASITIC is described, which is used for the analysis, design, and optimization of these structures. Measurements taken over a frequency range from 100 MHz to 5 GHz show good agreement with theory.

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Analysis, design, and optimization of spiral inductors and transformers for Si RF ICs

This paper describes the design and modeling of CMOS transistors, integrated passives, and circuit blocks at millimeter-wave (mm-wave) frequencies. The effects of parasitics on the high-frequency performance of 130-nm CMOS transistors are investigated, and a peak f/sub max/ of 135 GHz has been achieved with optimal device layout. The inductive quality factor (Q/sub L/) is proposed as a more representative metric for transmission lines, and for a standard CMOS back-end process, coplanar waveguide (CPW) lines are determined to possess a higher Q/sub L/ than microstrip lines. Techniques for accurate modeling of active and passive components at mm-wave frequencies are presented. The proposed methodology was used to design two wideband mm-wave CMOS amplifiers operating at 40 GHz and 60 GHz. The 40-GHz amplifier achieves a peak |S/sub 21/| = 19 dB, output P/sub 1dB/ = -0.9 dBm, IIP3 = -7.4 dBm, and consumes 24 mA from a 1.5-V supply. The 60-GHz amplifier achieves a peak |S/sub 21/| = 12 dB, output P/sub 1dB/ = +2.0 dBm, NF = 8.8 dB, and consumes 36 mA from a 1.5-V supply. The amplifiers were fabricated in a standard 130-nm 6-metal layer bulk-CMOS process, demonstrating that complex mm-wave circuits are possible in today's mainstream CMOS technologies.

Millimeter-wave CMOS design

An ultrawideband 3.1-10.6-GHz low-noise amplifier employing an input three-section band-pass Chebyshev filter is presented. Fabricated in a 0.18-/spl mu/m CMOS process, the IC prototype achieves a power gain of 9.3 dB with an input match of -10 dB over the band, a minimum noise figure of 4 dB, and an IIP3 of -6.7 dBm while consuming 9 mW.

An ultrawideband CMOS low-noise amplifier for 3.1-10.6-GHz wireless receivers

The present invention provides methods, devices, and systems for wireless physiological sensor patches and systems which incorporate these patches. The systems and methods utilize a structure where the processing is distributed asymmetrically on the two or more types of ASIC chips that are designed to work together. The invention also relates to systems comprising two or more ASIC chips designed for use in physiological sensing wherein the ASIC chips are designed to work together to achieve high wireless link reliability/security, low power dissipation, compactness, low cost and support a variety of sensors for sensing various physiological parameters.

Wireless physiological sensor patches and systems

This paper presents a low power 60 GHz transceiver that includes RF, LO, PLL and BB signal paths integrated into a single chip. The transceiver has been fabricated in a standard 90 nm CMOS process and includes specially designed ESD protection on all mm-wave pads. With a 1.2 V supply the chip consumes 170 mW while transmitting 10 dBm and 138 mW while receiving. Data transmission up to 5 Gb/s on each of I and Q channels has been measured, as has data reception over a 1 m wireless link at 4 Gb/s QPSK with less than 10-11 BER.

Ali M. Niknejad

Papers

Analysis, design, and optimization of spiral inductors and transformers for Si RF ICs

Millimeter-wave CMOS design

An ultrawideband CMOS low-noise amplifier for 3.1-10.6-GHz wireless receivers

Wireless physiological sensor patches and systems

A 90 nm CMOS Low-Power 60 GHz Transceiver With Integrated Baseband Circuitry