There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

Electro-optic modulators translate high-speed electronic signals into the optical domain and are critical components in modern telecommunication networks1,2 and microwave-photonic systems3,4. They are also expected to be building blocks for emerging applications such as quantum photonics5,6 and non-reciprocal optics7,8. All of these applications require chip-scale electro-optic modulators that operate at voltages compatible with complementary metal–oxide–semiconductor (CMOS) technology, have ultra-high electro-optic bandwidths and feature very low optical losses. Integrated modulator platforms based on materials such as silicon, indium phosphide or polymers have not yet been able to meet these requirements simultaneously because of the intrinsic limitations of the materials used. On the other hand, lithium niobate electro-optic modulators, the workhorse of the optoelectronic industry for decades9, have been challenging to integrate on-chip because of difficulties in microstructuring lithium niobate. The current generation of lithium niobate modulators are bulky, expensive, limited in bandwidth and require high drive voltages, and thus are unable to reach the full potential of the material. Here we overcome these limitations and demonstrate monolithically integrated lithium niobate electro-optic modulators that feature a CMOS-compatible drive voltage, support data rates up to 210 gigabits per second and show an on-chip optical loss of less than 0.5 decibels. We achieve this by engineering the microwave and photonic circuits to achieve high electro-optical efficiencies, ultra-low optical losses and group-velocity matching simultaneously. Our scalable modulator devices could provide cost-effective, low-power and ultra-high-speed solutions for next-generation optical communication networks and microwave photonic systems. Furthermore, our approach could lead to large-scale ultra-low-loss photonic circuits that are reconfigurable on a picosecond timescale, enabling a wide range of quantum and classical applications5,10,11 including feed-forward photonic quantum computation. Chip-scale lithium niobate electro-optic modulators that rapidly convert electrical to optical signals and use CMOS-compatible voltages could prove useful in optical communication networks, microwave photonic systems and photonic computation.

Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages

Trapped ions are among the most promising systems for practical quantum computing (QC). The basic requirements for universal QC have all been demonstrated with ions, and quantum algorithms using few-ion-qubit systems have been implemented. We review the state of the field, covering the basics of how trapped ions are used for QC and their strengths and limitations as qubits. In addition, we discuss what is being done, and what may be required, to increase the scale of trapped ion quantum computers while mitigating decoherence and control errors. Finally, we explore the outlook for trapped-ion QC. In particular, we discuss near-term applications, considerations impacting the design of future systems of trapped ions, and experiments and demonstrations that may further inform these considerations.

Trapped-ion quantum computing: Progress and challenges

Quantum technologies comprise an emerging class of devices capable of controlling superposition and entanglement of quantum states of light or matter, to realize fundamental performance advantages over ordinary classical machines. The technology of integrated quantum photonics has enabled the generation, processing and detection of quantum states of light at a steadily increasing scale and level of complexity, progressing from few-component circuitry occupying centimetre-scale footprints and operating on two photons, to programmable devices approaching 1,000 components occupying millimetre-scale footprints with integrated generation of multiphoton states. This Review summarizes the advances in integrated photonic quantum technologies and its demonstrated applications, including quantum communications, simulations of quantum chemical and physical systems, sampling algorithms, and linear-optic quantum information processing. This Review covers recent progress in integrated quantum photonics (IQP) technologies and their applications. The challenges and opportunities of realizing large-scale, monolithic IQP circuits for future quantum applications are discussed.

Integrated photonic quantum technologies

Optical modulators are at the heart of optical communication links. Ideally, they should feature low loss, low drive voltage, large bandwidth, high linearity, compact footprint and low manufacturing cost. Unfortunately, these criteria have been achieved only on separate occasions. Based on a silicon and lithium niobate hybrid integration platform, we demonstrate Mach–Zehnder modulators that simultaneously fulfil these criteria. The presented device exhibits an insertion loss of 2.5 dB, voltage–length product of 2.2 V cm in single-drive push–pull operation, high linearity, electro-optic bandwidth of at least 70 GHz and modulation rates up to 112 Gbit s−1. The high-performance modulator is realized by seamless integration of a high-contrast waveguide based on lithium niobate—a popular modulator material—with compact, low-loss silicon circuitry. The hybrid platform demonstrated here allows for the combination of ‘best-in-breed’ active and passive components, opening up new avenues for future high-speed, energy-efficient and cost-effective optical communication networks. Low-loss, high-speed and efficient optical modulators on a silicon platform are demonstrated.

High-performance hybrid silicon and lithium niobate Mach–Zehnder modulators for 100 Gbit s −1 and beyond

We demonstrate an ultralow loss monolithic integrated lithium niobate photonic platform consisting of dry-etched subwavelength waveguides with extracted propagation losses as low as 2.7 dB/m and microring resonators with quality factors up to 107.

Monolithic ultra-high-Q lithium niobate microring resonator

We demonstrate an ultralow loss monolithic integrated lithium niobate photonic platform consisting of dry-etched subwavelength waveguides. We show microring resonators with a quality factor of 10$^7$ and waveguides with propagation loss as low as 2.7 dB/m.

Monolithic Ultrahigh-Q Lithium Niobate Microring Resonator

Optical frequency combs consist of equally spaced discrete optical frequency components and are essential tools for optical communications and for precision metrology, timing and spectroscopy. To date, wide-spanning combs are most often generated by mode-locked lasers or dispersion-engineered resonators with third-order Kerr nonlinearity. An alternative comb generation method uses electro-optic (EO) phase modulation in a resonator with strong second-order nonlinearity, resulting in combs with excellent stability and controllability. Previous EO combs, however, have been limited to narrow widths by a weak EO interaction strength and a lack of dispersion engineering in free-space systems. In this work, we overcome these limitations by realizing an integrated EO comb generator in a thin-film lithium niobate photonic platform that features a large electro-optic response, ultra-low optical loss and highly co-localized microwave and optical felds, while enabling dispersion engineering. Our measured EO frequency comb spans more than the entire telecommunications L-band (over 900 comb lines spaced at ~ 10 GHz), and we show that future dispersion engineering can enable octave-spanning combs. Furthermore, we demonstrate the high tolerance of our comb generator to modulation frequency detuning, with frequency spacing finely controllable over seven orders of magnitude (10 Hz to 100 MHz), and utilize this feature to generate dual frequency combs in a single resonator. Our results show that integrated EO comb generators, capable of generating wide and stable comb spectra, are a powerful complement to integrated Kerr combs, enabling applications ranging from spectroscopy to optical communications.

Broadband electro-optic frequency comb generation in an integrated microring resonator

Optical frequency combs consist of equally spaced discrete optical frequency components and are essential tools for optical communication, precision metrology, timing and spectroscopy1-9. At present, combs with wide spectra are usually generated by mode-locked lasers10 or dispersion-engineered resonators with third-order Kerr nonlinearity11. An alternative method of comb production uses electro-optic (EO) phase modulation in a resonator with strong second-order nonlinearity, resulting in combs with excellent stability and controllability12-14. Previous EO combs, however, have been limited to narrow widths by a weak EO interaction strength and a lack of dispersion engineering in free-space systems. Here we overcome these limitations by realizing an integrated EO comb generator in a thin-film lithium niobate photonic platform that features a large EO response, ultralow optical loss and highly co-localized microwave and optical fields15, while enabling dispersion engineering. Our measured EO comb spans more frequencies than the entire telecommunications L-band (over 900 comb lines spaced about 10 gigahertz apart), and we show that future dispersion engineering can enable octave-spanning combs. Furthermore, we demonstrate the high tolerance of our comb generator to modulation frequency detuning, with frequency spacing finely controllable over seven orders of magnitude (10 hertz to 100 megahertz), and we use this feature to generate dual-frequency combs in a single resonator. Our results show that integrated EO comb generators are capable of generating wide and stable comb spectra. Their excellent reconfigurability is a powerful complement to integrated Kerr combs, enabling applications ranging from spectroscopy16 to optical communications8.

Amirhassan Shams-Ansari

Papers

Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages

Monolithic ultra-high-Q lithium niobate microring resonator

Monolithic Ultrahigh-Q Lithium Niobate Microring Resonator

Broadband electro-optic frequency comb generation in an integrated microring resonator

Broadband electro-optic frequency comb generation in a lithium niobate microring resonator