Deposits of clastic carbonate-dominated (calciclastic) sedimentary slope systems in the rock record have been identified mostly as linearly-consistent carbonate apron deposits, even though most ancient clastic carbonate slope deposits fit the submarine fan systems better. Calciclastic submarine fans are consequently rarely described and are poorly understood. Subsequently, very little is known especially in mud-dominated calciclastic submarine fan systems. Presented in this study are a sedimentological core and petrographic characterisation of samples from eleven boreholes from the Lower Carboniferous of Bowland Basin (Northwest England) that reveals a >250 m thick calciturbidite complex deposited in a calciclastic submarine fan setting. Seven facies are recognised from core and thin section characterisation and are grouped into three carbonate turbidite sequences. They include: 1) Calciturbidites, comprising mostly of highto low-density, wavy-laminated bioclast-rich facies; 2) low-density densite mudstones which are characterised by planar laminated and unlaminated muddominated facies; and 3) Calcidebrites which are muddy or hyper-concentrated debrisflow deposits occurring as poorly-sorted, chaotic, mud-supported floatstones. These

Phd by thesis

Silicon avalanche light-emitting devices (Si Av LEDs) offer various possibilities for realizing micro- and even nano- optical biosensors directly on chip. The light-emitting devices (LEDs) operate in the wavelength range of about 450-850nm, and their optical power emitted is of the order of a few hundreds of nW/µm2. These LEDs could be fabricated in micro- and nano- dimensions by using modern semiconductor fabrication processing technologies through the mainstream of silicon material. Through a series of experiments, the dispersion phenomena in the Si Av LED are observed. Also, its light emission point was proved to locate at about one micron just below the silicon-silicon oxide interface. Subsequently, a micro-fluidic channel sensor was designed by using the dispersion characteristics owned by the Si Av LED. The analytes flowing through a micro-fluidic channel could be studied by their specific transmittance and absorption spectra. Moreover, simulations verify that a novel designed waveguide-based sensor could be fabricated on chip between the Si optical source and the Si P-I-N detector.

Micro optical sensors based on avalanching silicon light-emitting devices monolithically integrated on chips

We describe the saturation properties and power scaling of large-aperture planar photoconducting antennas. These antennas have been used to emit and detect electromagnetic pulses with terahertz bandwidth. At high optical fluences, the amplitude of the radiated electric field saturates, at a value comparable to the bias field in agreement with a simple model of the radiation. We also discuss the saturation properties of the large-aperture photoconducting antennas with different semiconductor materials.

Saturation properties of large-aperture photoconducting antennas

In this paper, we present a brief history of silicon photonics from the early research papers in the late 1980s and early 1990s, to the potentially revolutionary technology that exists today. Given that other papers in this special issue give detailed reviews of key aspects of the technology, this paper will concentrate on the key technological milestones that were crucial in demonstrating the capability of silicon photonics as both a successful technical platform, as well as indicating the potential for commercial success. The paper encompasses discussion of the key technology areas of passive devices, modulators, detectors, light sources, and system integration. In so doing, the paper will also serve as an introduction to the other papers within this special issue.

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The Emergence of Silicon Photonics as a Flexible Technology Platform

Silicon MOS Optoelectronic Micro-Nano Structure Based on Reverse-Biased PN Junction

The light emission process from a p-n junction in the forward-bias region is slow to respond to modulation signals due to the indirect band structure of silicon Experimental results for a reverse-bias region showing light modulation in the range of tens of gigahertz are observed for the first time For such a light emitter, the limiting speed of light modulation is shown to be determined by the transit time of the minority carriers across the junction during the filament formation of breakdown currents, which has been demonstrated by simulation of the propagation of a shockwave-like pattern in the breakdown field

High-speed light Modulation in avalanche breakdown mode for Si diodes

Barriers to the commercial implementation of optical interconnects between integrated circuits (ICs) center around the fabrication of optical elements on wafers through conventional Si processes. Most other approaches for optical interconnects use direct bandgap emitters that require drastic changes in conventional fabrication processes. In this work, we demonstrate the ability to transmit electrical signals using Si-based components, i.e., the light was generated by biasing a p-n junction at avalanche breakdown voltage, light was coupled through a fiber cable made of SiO/sub 2/, and detected by an Si-based avalanche photodiode. Results presented demonstrate the switching behavior of the light emitter, transmission of the signal across the fiber, and measurement of the signal limited by the bandwidth of the receiver amplifier.

All Si-based optical interconnect for interchip signal transmission

Circuit modeling and performance analysis of photoconductive antenna

The principle of operation of the transistor-based Marx bank circuit has been examined. It was experimentally observed that stage-wise increase of reverse voltage does not occur. This cannot be explained by the principle of operation understood so far. A new explanation, consistent with the experimental observations and associating current-mode second breakdown of transistors, is proposed. A few experimental observations made by earlier workers have also been justified in light of the new current-controlled mechanism.

The principle of operation of the avalanche transistor-based Marx bank circuit: A new perspective.

We present a high precision lumped parameter model for efficient prediction of the resonant frequencies and coupling of cantilevered piezoelectric energy harvesters in absence of tip mass. Correction factors for the existing lumped parameter model are derived by comparing with the highly accurate distributed parameter model of cantilevered harvesters. First, a correction factor is defined for uncoupled lumped parameter model to predict the natural frequencies. Finally, the coupled lumped parameter model is subjected to a unified correction factor to accurately predict both the resonant frequencies and electrical outputs. The unified correction factor is derived by unifying the frequency and amplitude correction factors. The calculated outputs are in good agreement with the experimental results available in the literature.

Amitabh Chatterjee

Papers

High-speed light Modulation in avalanche breakdown mode for Si diodes

All Si-based optical interconnect for interchip signal transmission

Circuit modeling and performance analysis of photoconductive antenna

The principle of operation of the avalanche transistor-based Marx bank circuit: A new perspective.

A High Precision Lumped Parameter Model for Piezoelectric Energy Harvesters