Showing papers by "Amnon Yariv published in 1983"
Book•
28 Dec 1983
TL;DR: The Wiley Classics Library as discussed by the authors consists of selected books that have become recognized classics in their respective fields with these new unabridged and inexpensive editions, Wiley hopes to extend the life of these important works by making them available to future generations of mathematicians and scientists.
Abstract: The Wiley Classics Library consists of selected books that have become recognized classics in their respective fields With these new unabridged and inexpensive editions, Wiley hopes to extend the life of these important works by making them available to future generations of mathematicians and scientists
1,069 citations
TL;DR: In this article, a model of semiconductor laser noise is presented which includes the carrier density as a dynamical variable and carrier density dependence of the refractive index, and the role of carrier noise in determining the field spectrum linewidth.
Abstract: A model of semiconductor laser noise is presented which includes the carrier density as a dynamical variable and the carrier density dependence of the refractive index. The Van der Pol laser noise model is shown to he a special case of this treatment. Expressions are calculated for all laser spectra and compared with their Van der Pol counterparts. The power fluctuations spectrum and the frequency fluctuations spectrum exhibit a resonance corresponding to the relaxation resonance and the field spectrum contains fine structure, similar to sidebands which result from harmonic frequency modulation of a carrier signal. The role of carrier noise in determining the field spectrum linewidth is also considered.
245 citations
TL;DR: In this paper, a theory of the amplitude and phase modulation characteristic of a single mode semiconductor laser is presented, where the amplitude modulation couples through the complex susceptibility of the gain medium to the phase.
Abstract: A theory of the amplitude and phase modulation characteristic of a single mode semiconductor laser is presented. In this model the amplitude modulation couples through the complex susceptibility of the gain medium to the phase. We show that this coupling constant can be obtained by a high‐frequency modulation experiment. This measured coupling constant is used to infer the linewidth enhancement factor α as discussed by Henry, and Vahala and Yariv. Experiments confirmed the model and we measured a linewidth enhancement factor ‖α‖=4.6±1.0 for a GaAlAs buried optical guide laser.
236 citations
TL;DR: In this article, a simple model for the linewidth enhancement factor α and its frequency dependence in semiconductor lasers is presented, which is in reasonable agreement with the experimental results.
Abstract: A simple model for the linewidth enhancement factor α and its frequency dependence in semiconductor lasers is presented. Calculations based on this model are in reasonable agreement with experimental results.
155 citations
TL;DR: In this paper, a new type of infrared photodetector using free electron absorption in a heavily doped GaAs/GaAlAs quantum well structure has been demonstrated, and preliminary results indicate a strong response in the near infrared with a responsivity conservatively estimated at 200 A/W.
Abstract: A new type of infrared photodetector using free electron absorption in a heavily doped GaAs/GaAlAs quantum well structure has been demonstrated. Preliminary results indicate a strong response in the near infrared with a responsivity conservatively estimated at 200 A/W. The structure can potentially be tailored during fabrication for use in several infrared bands of interest, including the 3 to 5 micron band and the 8 to 10 micron band.
145 citations
TL;DR: In this paper, a high-frequency laser with a short cavity with a window structure and operating at low temperatures is proposed to achieve a modulation bandwidth of >8 GHz without any special window structure at room temperature.
Abstract: Experimental and theoretical studies indicate that a high‐frequency laser with bandwidths up to X‐band frequencies (≳10 GHz) should be one having a short cavity with a window structure, and preferably operating at low temperatures. These designs would accomplish the task of shortening the photon lifetime, increasing the intrinsic optical gain, and increasing the internal photon density without inflicting mirror damage. A modulation bandwidth of >8 GHz has been achieved using a 120‐μm laser without any special window structure at room temperature.
141 citations
TL;DR: In this paper, a monolithic, diffraction coupled phase-locked semiconductor laser array has been fabricated and stable narrow far field patterns (∼3°) and peak power levels of 1 W have been obtained for 100μm wide devices with threshold currents as low as 250 mA.
Abstract: A new monolithic, diffraction coupled phase‐locked semiconductor laser array has been fabricated. Stable narrow far‐field patterns (∼3°) and peak power levels of 1 W have been obtained for 100‐μm‐wide devices with threshold currents as low as 250 mA. Such devices may be useful in applications where high power levels and stable radiation patterns are needed.
115 citations
TL;DR: Subsidiary maxima are observed in the field spectra of single mode semiconductor lasers as discussed by the authors, and they are linked to the relaxation resonance of the field spectrum of a single-mode semiconductor laser.
Abstract: Subsidiary maxima are observed in the field spectra of single mode semiconductor lasers Measurements of their power dependence show they are linked to the relaxation resonance We attribute these maxima to combined phase and amplitude fluctuations at the relaxation resonance A theoretical calculation of the field spectrum using the results of a noise analysisincorporating carrier dynamics agrees very well with observations
110 citations
TL;DR: In this paper, a passive phase conjugate mirror based on four-wave mixing in an optical ring cavity is described, which generates only one of its pumping beams by nonlinear optical interactions, the other being provided by feedback of the probe after transmission through the nonlinear medium.
Abstract: A passive phase conjugate mirror based on four-wave mixing in an optical ring cavity is described. Unlike previously demonstrated passive phase conjugate mirrors it generates only one of its pumping beams by nonlinear optical interactions, the other being provided by feedback of the probe after transmission through the nonlinear medium. The results of a theory yielding phase conjugate reflectivity and oscillation thresholds are presented together with an experimental demonstration of phase conjugation in barium titanate and strontium barium niobate. The device is self-starting by four-wave mixing, and has an oscillation threshold lower than that of other previously demonstrated passive phase conjugate mirrors with similar ease of alignment. The operation of a device which generates nonconjugate oscillation beams is also reported.
107 citations
TL;DR: In this paper, a monolithic phase-locked semiconductor laser array has been fabricated, employing two-level metallization, each element has a separate contact, thus making it possible to compensate for device nonuniformities and control the near-field and far-field patterns.
Abstract: A new monolithic phase‐locked semiconductor laser array has been fabricated. Employing two‐level metallization, each of the eight elements in the array has a separate contact, thus making it possible to compensate for device nonuniformities and control the near‐field and far‐field patterns. Threshold currents are approximately 60 mA for each 5‐μm‐wide laser in the array. Phase locking has been observed via the narrowing of the far‐field pattern. Experimental results are compared to those obtained from the same arrays operated with all the lasers connected in parallel.
70 citations
TL;DR: In this article, the effect of fast thermal fluctuations of electronic state occupancy on the field spectrum of semiconductor lasers is considered and an expression for the resulting power independent linewidth contribution is derived.
Abstract: In this letter we consider the effect of fast thermal fluctuations of electronic state occupancy on the field spectrum of semiconductor lasers and derive for the first time an expression for the resulting power independent linewidth contribution. The magnitude and temperature dependence of this linewidth component agree reasonably well with measurements of a power independent linewidth made by Welford and Mooradian.
TL;DR: In this paper, a novel method to passively mode lock a semiconductor laser with a split contact coupled to an external cavity is presented, which does not rely on absorption introduced by damaging the crystal and is therefore inherently more reliable.
Abstract: In this letter we report on a novel method to passively mode lock a semiconductor laser. We present experimental results of GaAlAs buried heterostructure semiconductor laser with a split contact coupled to an external cavity. The split contact structure is used to introduce a controllable amount of saturable absorption which is necessary to initiate passive mode locking. Unlike previous passive mode locking techniques, the method presented does not rely on absorption introduced by damaging the crystal and is consequently inherently more reliable. We have obtained pulses with a full width at half-maximum of 35 ps at repetition frequencies between 500 MHz and 1.5 GHz.
15 Feb 1983
TL;DR: In this paper, a theory of the amplitude and phase modulation characteristic of a single mode semiconductor laser is presented, where the amplitude modulation couples through the complex susceptibility of the gain medium to the phase.
Abstract: A theory of the amplitude and phase modulation characteristic of a single mode semiconductor laser is presented. In this model the amplitude modulation couples through the complex susceptibility of the gain medium to the phase. We show that this coupling constant can be obtained by a high-frequency modulation experiment. This measured coupling constant is used to infer the linewidth enhancement factor as discussed by Henry, and Vahala and Yariv. Experiments confirmed the model and we measured a linewidth enhancement factor |alpha|=4.6±1.0 for a GaAlAs buried optical guide laser.
TL;DR: In this paper, a direct measurement of electron and hole leakage in InGaAsP/InP lasers has been carried out, and the effect of electron leakage on the temperature sensitivity of InGaASP/INP lasers was revealed.
Abstract: A direct measurement of electron and hole leakage in InGaAsP/InP lasers has been carried out. The effect of electron leakage on the temperature sensitivity of InGaAsP/InP lasers has been revealed.
TL;DR: In this paper, the free carrier and intervalence band absorption in quantum-well structures has been investigated and potential application of the enhanced absorptions to near-infrared photodetectors is discussed.
TL;DR: In this article, the carrier leakage over the heterobarrier in an InGaAsP/InP laser is measured directly in a laser-bipolar transistor structure, and it is shown that there is a significant amount of carrier leakage under normal laser operating conditions.
Abstract: Carrier leakage over the heterobarrier in an InGaAsP/InP laser is measured directly in a laser-bipolar-transistor structure. Experimental results indicate a significant amount of carrier leakage under normal laser operating conditions.
TL;DR: In this article, the mutual coherence of two coupled semiconductor lasers is investigated experimentally and it is demonstrated that by varying the gain in the overlap region, the degree of phase coherence can be continuously controlled.
Abstract: The mutual coherence of two coupled semiconductor lasers is investigated experimentally. It is demonstrated that by varying the gain in the overlap region, the degree of phase coherence can be continuously controlled. The quantitative characterization of the degree of phase coherence by fringe visibility is demonstrated.
TL;DR: In this article, a study of the mass transport phenomenon in InP is presented, conditions and possible explanation for the transport process are discussed, and characteristics of mass transported InP homojunctions are described and compared with those in the InP-InGaAsP heterojunctions.
Abstract: A study of the mass transport phenomenon in InP is presented. Conditions and possible explanation for the transport process are discussed. Characteristics of the mass transported InP homojunctions are described and compared with those in the InP–InGaAsP heterojunctions. Effects of the mass transported junction on laser performance are discussed.
Patent•
02 Dec 1983TL;DR: In this paper, a multiple quantum-well heterojunction structure for infrared detection with cutoff wavelength established by the choice of the value x which defines the depth of the wells is presented.
Abstract: Alternating layers of N+ GaAs (80 Å) and N+ Ga 1-x Al x As (300 Å), all heavily doped with a uniform flux of Sn, and biased by 2V, provide a multiple quantum-well heterojunction structure for infrared detection with cutoff wavelength established by the choice of the value x which defines the depth of the wells. Fine tuning of the cutoff wavelength may be achieved by varying the bias voltage. By biasing the individual quantum-well layers progressively through a voltage divider, an avalanche mechanism may be achieved in the detector for signal amplification. The detectors may be fabricated in large two-dimensional arrays.
TL;DR: An undercut mesa laser is fabricated on an n + -InP substrate using a single step liquid phase epitaxy growth process and a planar structure is obtained by using a polyimide filling layer as mentioned in this paper.
Abstract: An undercut mesa laser is fabricated on an n + -InP substrate using a single step liquid phase epitaxy growth process and a planar structure is obtained by using a polyimide filling layer. The lasers operate at fundamental transverse mode due to a scattering loss mechanism. Threshold currents of 18 mA and stable single transverse mode operating at high currents are obtained.
TL;DR: In this paper, a high-speed, high-responsivity GaAlAs/GaAs p-i-n photodiode has been fabricated on a GaAs semi-insulating substrate.
Abstract: A high-speed, high-responsivity GaAlAs/GaAs p-i-n photodiode has been fabricated on a GaAs semi-insulating substrate. The 75-µm-diam photodiode has a 3-dB bandwidth of 2.5 GHz and responsivity of 0.45 A/W at 8400 A (external quantum efficiency of 65%). The diode is suitable for monolithic integration with other optoelectronic devices.
TL;DR: In this article, a diffraction-limited 1.8°-wide far field pattern was obtained from a three-element array with multiple contacts by tailoring the distribution of the currents through the array elements.
Abstract: Experimental results of far-field patterns of semiconductor laser arrays with multiple contacts are reported. It is found that, by tailoring the distribution of the currents through the array elements, narrow single-lobe patterns—which are more useful in most applications—can be obtained from arrays that usually operate in a double-lobe mode. A diffraction-limited 1.8°-wide far-field pattern was obtained from a three-element array.
TL;DR: In this article, a model calculation for the field and hot carrier enhanced electron leakage in InGaAsP/InP LED's and lasers is presented, and the significant influence of the doping level in the P-InP confining layer on leakage current is confirmed.
Abstract: A model calculation for the field and hot carrier enhanced electron leakage in InGaAsP/InP LED's and lasers is presented. The significant influence of the doping level in the P-InP confining layer on leakage current is confirmed.
TL;DR: In this paper, a phase-locked array of InGaAsP lasers was fabricated for the first time, which utilized diffraction coupling between adjacent adjacent lasers to achieve phase locking and achieved a threshold current as low as 200 mA for arrays with 250m cavity length.
Abstract: A phase‐locked array of InGaAsP lasers has been fabricated for the first time. This 50‐μm‐wide array utilized diffraction coupling between adjacent lasers to achieve phase locking. Threshold current as low as 200 mA is obtained for arrays with 250‐μm cavity length. Smooth single‐lobe far‐field patterns with beam divergence as narrow as 3° have been achieved.
TL;DR: In this paper, the possibility of phononless free-carrier absorption in quantum well heterojunction superlattices was investigated and it was shown that the absorption coefficient was significantly enhanced over the phonon-assisted process.
Abstract: The possibility of phononless free-carrier absorption in quantum well heterojunction superlattices was investigated. Order of magnitude calculation showed that the absorption coefficient was significantly enhanced over the phonon-assisted process. Important aspects of the enhancement in the design of infrared photodetectors are discussed.
TL;DR: In this paper, it was demonstrated experimentally that the intrinsic modulation response of injection lasers can be modified by reducing mirror reflectivities, which leads to suppression of relaxation oscillation resonance and a reduction of nonlinear distortions up to multi-GHz frequencies.
Abstract: It is demonstrated experimentally that the intrinsic modulation response of injection lasers can be modified by reducing mirror reflectivities, which leads to suppression of relaxation oscillation resonance and a reduction of nonlinear distortions up to multi-GHz frequencies. A totally flat response with a 3-dB bandwidth of 5 GHz was obtained using antireflection coated buried heterostructure lasers fabricated on a semi-insulating substrate. Harmonic distortions were below 40 dB within the entire 3-dB bandwidth. These results are in accord with theoretical predictions based on an analysis which include the effects of superluminescence in the laser cavity.
TL;DR: The direct analysis in the time domain of the fluctuations of a signal propagating in a fiber-optic link in the presence of an imperfect connector makes it possible to formalize in a simple manner the description of its statistical properties.
Abstract: The direct analysis in the time domain of the fluctuations of a signal propagating in a fiber-optic link in the presence of an imperfect connector makes it possible to formalize in a simple manner the description of its statistical properties. This permits, in particular, the clarification of the role played by the various time scales involved in the problem (coherence time of the fiber-exciting source, fiber modal delay, detector response time, etc.) in evaluating the statistical averages. The formalism includes in a straightforward way the case of simultaneous excitation of the fiber by more than one source. This last circumstance is expedient for checking the beneficial effect on modal noise derived from exciting the fiber with N laser sources.
15 Apr 1983
TL;DR: In this article, a simple model for the linewidth enhancement factor alpha and its frequency dependence in semiconductor lasers is presented, which is in reasonable agreement with the experimental results.
Abstract: A simple model for the linewidth enhancement factor alpha and its frequency dependence in semiconductor lasers is presented. Calculations based on this model are in reasonable agreement with experimental results.
TL;DR: In this paper, the quantum limit of the laser linewidth is shown to imply a residual Constant Linewidth rather than obeying an inverse power dependence as is usually assumed.
Abstract: The quantum mechanical limit of the laser linewidth is shown to imply a residual Constant linewidth rather than obey an inverse power dependence as is usually assumed.
TL;DR: In this article, a short cavity length (38 µm) laser has been fabricated using a recently developed microcleavage technique using SiO2-amorphous Si multilayer coatings to obtain high reflectivity mirrors.
Abstract: Short cavity length (38 µm) lasers have been fabricated using a recently developed microcleavage technique. SiO2-amorphous Si multilayer coatings have been evaported on the lasers to obtain high reflectivity mirrors. The lasers have current thresholds as low as 3.8 mA with 85% reflecting front mirror and high reflectivity rear mirror and 2.9 mA with two high reflectivity mirrors. Single longitudinal mode operation is observed over a wide range of driving currents and temperatures.