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Showing papers by "Amnon Yariv published in 1988"


Journal ArticleDOI
TL;DR: In this article, Derry et al. derived basic scaling laws for bulk, two-dimensional and one-dimensional (quantum wire) semiconductor lasers, starting from quantum derivation of the optical properties of confined carriers, the dimensional dependencies of the scaling laws are made explicit.
Abstract: Basic scaling laws are derived for bulk, two‐dimensional (quantum well) and one‐dimensional (quantum wire) semiconductor lasers. Starting from quantum derivation of the optical properties of confined carriers, the dimensional dependencies of the scaling laws are made explicit. Threshold currents of ∼100 and 2–3 μA are predicted for single quantum well and quantum wire lasers, respectively. The basic considerations of this analysis were used recently to obtain ultralow threshold quantum well lasers [P. L. Derry, A. Yariv, K. Lau, N. Bar‐Chaim, K. Lee, and J. Rosenberg, Appl. Phys. Lett. 50, 1773 (1987)].

156 citations


Journal ArticleDOI
TL;DR: In this paper, a unified formulation and review of an extensive class of radiation effects and devices based on free or quasifree electrons is presented, including slow-wave radiators, periodic bremsstrahlung radiators and transverse-binding radiators.
Abstract: This article presents a unified formulation and review of an extensive class of radiation effects and devices based on free or quasifree electrons. The effects and devices reviewed include slow-wave radiators [such as \ifmmode \check{C}\else \v{C}\fi{}erenkov, Smith-Purcell, and TWT (traveling-wave tube) effects and devices], periodic bremsstrahlung radiators [such as undulator radiation, magnetic bremsstrahlung FEL's (free-electron lasers), and coherent bremsstrahlung in the crystal lattice], and transverse-binding radiators [such as the CRM (cyclotron resonance maser) and channeling radiation]. Starting from a general quantum-electrodynamic model, both quantum and classical effects and operating regimes of these radiation devices are described. The article provides a unified physical description of the interaction kinematics, and presents equations for the characterization of spontaneous and stimulated radiative emission in these various effects and devices. Universal relations between the spontaneous and stimulated emission parameters are revealed and shown to be related (in the quantum limit) to Einstein relations for atomic radiators and (in the classical limit) to the relations derived by Madey for magnetic bremsstrahlung FEL for on-axis radiative emission. Examples for the application of the formulation are given, estimating the feasibility of channeling radiation x-ray laser and optical regime Smith-Purcell FEL, and deriving the gain equations of magnetic bremsstrahlung FEL and CRM for arbitrary electron propagation direction, structure (wiggler) axis, and radiative emission angle.

119 citations


Journal ArticleDOI
TL;DR: In this paper, a monolithic wavelength demultiplexer consisting of voltage-tunable superlattice p-i-n photodetectors in a waveguide confirmation is discussed.
Abstract: Extended measurements and theory on the recently developed monolithic wavelength demultiplexer consisting of voltage-tunable superlattice p-i-n photodetectors in a waveguide confirmation are discussed. It is shown that the device is able to demultiplex and detect two optical signals with a wavelength separation of 20 nm directly into different electrical channels at a data rate of 1 Gb/s and with a crosstalk attenuation varying between 20 and 28 dB, depending on the polarization. The minimum acceptable crosstalk attenuation at a data rate of 100 Mb/s is determined to be 10 dB. The feasibility of using the device as a polarization angle sensor for linearly polarized light is also demonstrated. A theory for the emission of photogenerated carriers out of the quantum wells is included, since this is potentially a speed limiting mechanism in these detectors. It is shown that a theory of thermally assisted tunneling by polar optical phonon interaction is able to predict emission times consistent with the observed temporal response. >

109 citations


Journal ArticleDOI
TL;DR: In this article, the authors derived coupled-mode rate equations for coupled-cavity lasers using a novel approach based on the Mittag-Leffler theorem, and compared the results with those derived by several different approximations.
Abstract: Coupled-mode rate equations for coupled-cavity lasers are derived using a novel approach. The method, based on the Mittag-Leffler theorem, is exact. The coupling coefficients are compared to those derived by several different approximations. >

28 citations


Journal ArticleDOI
TL;DR: In this article, it was shown that the temperature dependence of the Hall mobility can be explained by a combined ionized impurity-polar optical phonon scattering model in the thin InAs layers.
Abstract: InAs epitaxial films have been grown by molecular beam epitaxy on high‐resistivity Si (20 Ω cm) substrates for the first time, and transport properties were investigated by Hall effect measurements down to 10 K. The electron mobilities peak at 75 K with a value of 4.5×104 cm2/(V s) in 6.7‐μm‐thick (n=2.6×1015 cm−3 ) unintentionally doped layers. It is shown that the temperature dependence of the Hall mobility can be explained by a combined ionized impurity‐polar optical phonon scattering model in the thin InAs layers. Despite the existence of a large lattice mismatch, the results are indicative of a high quality material.

27 citations


Journal ArticleDOI
TL;DR: In this paper, the physical origin of the effect is described and an optical tracking filter based on the effect was demonstrated in a photorefractive Bi12SiO20 crystal.
Abstract: Transient energy coupling between two coherent beams occurs in dynamic holographic media with local and noninstantaneous responses. The physical origin of the effect is described, and an optical tracking filter based on the effect is demonstrated in a photorefractive Bi12SiO20 crystal.

25 citations


Journal ArticleDOI
TL;DR: In this paper, an n/sup +/-InAs emitter cap layer was grown in order to achieve a nonalloyed ohmic contact, which achieved a current gain as high as 45 at a collector current density of 2*10/sup 3/A/cm/sup 2/ with an ideality factor of 1.4.
Abstract: High-gain GaAs/AlGaAs n-p-n heterojunction bipolar transistors (HBT's) on Si substrates grown by molecular beam epitaxy (MBE) have been fabricated and tested. In this structure, an n/sup +/-InAs emitter cap layer was grown in order to achieve a nonalloyed ohmic contact. Typical devices with an emitter dimension of 50*50 mu m/sup 2/ exhibited a current gain as high as 45 at a collector current density of 2*10/sup 3/ A/cm/sup 2/ with an ideality factor of 1.4. This is the highest current gain reported for HBT's grown on Si substrates. Breakdown voltages as high as 10 and 15 V were observed for the emitter-base and collector-base junctions respectively. The investigation on devices with varying emitter dimensions demonstrates that much higher current gains can be expected. >

20 citations



Journal ArticleDOI
TL;DR: In this article, the authors present the results of experimental study of the absorption coefficient, two-beam photorefractive coupling constant, and photore-fractive response time of a doubly Ce− and Ca−doped Sr0.6Ba0.4Nb2O6.
Abstract: We present the results of experimental study of the absorption coefficient, two‐beam photorefractive coupling constant, and photorefractive response time of a doubly Ce‐ and Ca‐doped Sr0.6Ba0.4Nb2O6. This crystal displays enhanced photorefractive response at near infrared wavelengths when compared to Ce‐doped SBN:60. The temperature dependence of the coupling constant over the range from −30 to 40 °C has also been studied.

17 citations


Journal ArticleDOI
TL;DR: In this paper, a double-phase conjugate mirror was used for image subtraction, addition, and intensity inversion by two orthogonally polarized image-bearing phase conjugates.
Abstract: We demonstrate, using a double‐phase conjugate mirror, image subtraction, addition, and intensity inversion by two orthogonally polarized image‐bearing phase conjugate waves.

16 citations


Journal ArticleDOI
TL;DR: In this paper, a general theory of polarization and spatial information recovery by modal dispersal and phase conjugation is presented by means of a coherency matrix formalism, applied to a system that consists of a multimode modal-scrambling fiber terminated by a conventional phase-conjugate mirror that reflects only one polarization component.
Abstract: A general theory of polarization and spatial information recovery by modal dispersal and phase conjugation is presented by means of a coherency matrix formalism. The theory is applied to a system that consists of a multimode modal-scrambling fiber terminated by a conventional phase-conjugate mirror that reflects only one polarization component. The degree of polarization and the signal-to-noise ratio of the reconstructed field are discussed as a function of input-beam launching conditions. Some experimental results are also shown for comparison with the theory.

Journal ArticleDOI
TL;DR: In this article, it was shown that (Al,Ga)As single quantum well (SQW) lasers have substantially narrower spectral linewidths than bulk double-heterostructure lasers.
Abstract: We demonstrate that, as predicted, (Al,Ga)As single quantum well (SQW) lasers have substantially narrower spectral linewidths than bulk double-heterostructure lasers. We have observed a further major reduction (>3×) in the linewidth of these SQW lasers when the facet reflectivities are enhanced. This observation is explained theoretically on the basis of the very low losses in coated SQW lasers and the value of the spontaneous emission factor at low threshold currents. We also report on the modulation frequency response parameter of these SQW lasers.

Journal ArticleDOI
TL;DR: Coupled-wave theory is applied to describe the lateral modes of semiconductor lasers with a periodic gain and refractive-index variation across their widths and good agreement is observed between the analytical modes and those computed numerically for comparison.
Abstract: We apply coupled-wave theory to describe the lateral modes of semiconductor lasers with a periodic gain and refractive-index variation across their widths. The model is relevant to devices whose complex index of refraction is determined by current injection from closely spaced parallel electrodes. Good agreement is observed between the analytical modes and those computed numerically for comparison.

Journal ArticleDOI
TL;DR: In this paper, a linear relationship between the Al mole fraction and the lattice strain has been shown to be a function of the number of atoms in a mixture of GaAs and GaAs.
Abstract: The techniques of nuclear resonant reaction analysis (NRRA) using 27Al(p,gamma)28Si and x-ray rocking curve (XRC) based on double-crystal diffractometry have been utilized to determine directly the Al concentration and its depth distribution in molecular-beam epitaxially (MBE) grown AlxGa1–xAs/GaAs heterojunctions. Combination of these two methods has revealed a linear relationship between the Al mole fraction and the lattice strain. This can eliminate the need for assuming that Vegard's law holds and that extrapolated elastic coefficients are accurate. The result supports that both of these two techniques provide an accurate determination of the absolute Al content and crystalline quality in AlxGa1–xAs/GaAs throughout the entire composition range (0<=x<=1) as well as profiling the Al distribution. In addition, significant depth fluctuations in the Al mole fraction in some samples have been probed by the NRRA technique as well as by the XRC. The result suggests that a reliable and accurate measurement must be undertaken to ensure the control of the required Al distribution, which is necessary for the high performance of many devices.

Journal ArticleDOI
TL;DR: This work has demonstrated thresholding in a semilinear self-pumped phase-conjugate mirror by introducing grating motion within the photorefractive crystal and using the dependence of photoreFractive response time on the intensity of the incident beam.
Abstract: We have demonstrated thresholding in a semilinear self-pumped phase-conjugate mirror by introducing grating motion within the photorefractive crystal and using the dependence of photorefractive response time on the intensity of the incident beam. The threshold level Ith was found to be a function of the grating velocity. This property has potential applications in optical computing and optical signal processing.

Proceedings Article
25 Apr 1988
TL;DR: A GaAs-on-Si detector can take advantage of the high carrier mobilities and optical absorption coefficient of GaAs and serve as a high-speed receiver in a composite GaAs/Si optoelectronic circuit as mentioned in this paper.
Abstract: The potential integration of the optoelectronic capabilities of GaAs with the highly developed integrated circuit technology of Si has motivated a great deal of effort toward fabricating GaAs devices—particularly lasers—in epitaxial layers grown on Si substrates. A GaAs-on-Si detector can take advantage of the high carrier mobilities and optical absorption coefficient of GaAs and serve as a high-speed receiver in a composite GaAs/Si optoelectronic circuit.

Journal ArticleDOI
TL;DR: In this paper, a single quantum well (SQW) with threshold current density as low as 93 A/cm^2 (520 μm long) and switch-on delay <50 ps without any current prebias is presented.
Abstract: Broad area graded‐index separate‐confinement heterostructure single quantum well lasers grown by molecular‐beam epitaxy (MBE) with threshold current density as low as 93 A/cm^2 (520 μm long) have been fabricated. Buried lasers formed from similarly structured MBE material with liquid phase epitaxy regrowth had threshold currents at submilliampere levels when high reflectivity coatings were applied to the end facets. A cw threshold current of 0.55 mA was obtained for a laser with facet reflectivities of ∼80%, a cavity length of 120 μm, and an active region stripe width of 1 μm. These devices driven directly with logic level signals have switch‐on delays <50 ps without any current prebias. Such lasers permit fully on–off switching while at the same time obviating the need for bias monitoring and feedback control.

Journal ArticleDOI
TL;DR: In this paper, a phase-conjugate mirror with an externally driven Fabry-Perot interferometer with intracavity-pumped photorefractive material is proposed.
Abstract: We present a new type of phase-conjugate mirror that is based on an externally driven Fabry-Perot interferometer with intracavity-pumped photorefractive material, which is probed by the signal beam. It is shown theoretically that such a configuration leads to multivalued solutions and possibly to bistability. This configuration also permits optical control of the resonator output and electrical control of the phase-conjugate reflectivity.

Journal ArticleDOI
TL;DR: In this paper, the system of equations describing the nonlinear interaction associated with the optical Kerr effect among the four forward and backward-propagating modes in a straight single-mode fiber was derived.
Abstract: We derive the system of equations describing the nonlinear interaction, associated with the optical Kerr effect, among the four forward- and backward-propagating modes in a straight single-mode fiber. This allows us, in particular, to obtain the set of equations governing nonlinear evolution in a highly twisted fiber of the corresponding copropagating and counterpropagating right and left circularly polarized modes.

Journal ArticleDOI
TL;DR: A fiber-coupled-ring passive phase-conjugate mirror is used to achieve mutual thresholding free of bistability effects and to obtain switching among several mutually incoherent light beams.
Abstract: A fiber-coupled-ring passive phase-conjugate mirror is used to achieve mutual thresholding free of bistability effects and to obtain switching among several mutually incoherent light beams

Proceedings Article
18 Jul 1988
TL;DR: In this paper, the authors derived the following values for the transparency densities of conventional (3D), quantum well (2D) and quantum wire semiconductor lasers using basic optical considerations which apply to quantum confined electron media.
Abstract: Using basic optical considerations which apply to quantum confined electron media, we derive the following values for the transparency densities of conventional (3D), quantum well (2D) and quantum wire semiconductor lasers.

Journal ArticleDOI
TL;DR: In this paper, GaAs/AlGaAs Pnp heterojunction bipolar transistors (HBTs) were fabricated and tested on (100) Si substrates for the first time, and the measured characteristics clearly demonstrate that device grade hole injection can be obtained in GaAs on Si epitaxial layers despite the presence of dislocations.
Abstract: GaAs/AlGaAs Pnp heterojunction bipolar transistors (HBTs) were fabricated and tested on (100) Si substrates for the first time A common-emitter current gain of β=8 was measured for the typical devices with an emitter area of 50×50 μm^2 at a collector current density of 1×10^(4) A/cm^2 with no output negative differential resistance up to 280 mA, highest current used A very high base-collector breakdown voltage of 10 V was obtained Comparing the similar structures grown on GaAs substrates, the measured characteristics clearly demonstrate that device grade hole injection can be obtained in GaAs on Si epitaxial layers despite the presence of dislocations

Journal ArticleDOI
TL;DR: In this article, a period grating was made and examined with a scanning electron microscope (SEM) for use as a first-order grating with a GaAs distributed feedback laser.
Abstract: Holographic lithography with the 2315 A line of a xenon ion laser is used to produce gratings in polymethylmethacrylate. An 1180 A period grating is made and examined with a scanning electron microscope (SEM). This grating period is appropriate for use as a first-order grating with a GaAs distributed feedback laser.

Proceedings Article
25 Apr 1988
TL;DR: In this paper, the array channels are optically isolated for some length L and then allowed to couple by diffraction in a common end region of length D. Thus the coupling is discrete rather than distributed, and by suitable choice of D the coupling constant can be tailored to favor the fundamental supermode.
Abstract: Diffraction-coupled arrays represent one path toward achieving fundamental supermode operation.1 In this geometry (Fig. 1), the array channels are optically isolated for some length L and then allowed to couple by diffraction in a common end region of length D. Thus the coupling is discrete rather than distributed, and by suitable choice of D the coupling constant can be tailored to favor the fundamental supermode.1,2

Journal ArticleDOI
M. B. Yi1, J. Paslaski1, Y. Y. Liu1, T. Chen1, Amnon Yariv1 
TL;DR: In this article, a front-illuminated GaInAsP/InP pin photodiode for use at the optical wavelength of 1.3 μm is described.
Abstract: Describes a high-speed front-illuminated GaInAsP/InP pin photodiode for use at the optical wavelength of 1.3 μm. The device is grown on an n+-InP substrate and uses polyimide both as a passivation layer and as a bonding pad holder to reduce parasitic capacitance. An optoelectronic sampling measurement of the impulse response shows a pulsewidth (FWHM) of 28 ps. A 3 dB bandwidth in excess of 18 GHz has been achieved.

Book ChapterDOI
01 Jan 1988
TL;DR: In this article, the phase conjugate power of mutually incoherent light beams is determined by their relative input power, based on the coupling of mutually coherent light beams by means of the fiber coupled PS mirror (FCPCM).
Abstract: The recent development of optical implementations of various data processing procedures created a demand for a sensitive all optical threshold device [1]. We henceforth present a possible mechanism for such a device, based on the coupling of mutually incoherent light beams by means of the fiber coupled phase conjugate mirror (FCPCM)[2,3], and on an optical phenomenon in which the phase conjugate power of these beams is determined by their relative input power.

Journal ArticleDOI
TL;DR: MeV oxygen ion implantation with optimum thermal annealing produces a deep buried electrical isolation layer in n-type GaAs and reduces optical absorption in GaAs/AlGaAs quantum well structures.
Abstract: MeV oxygen ion implantation in GaAs/ AlGaAs has been shown to provide a simple and very promising technique for quantum well laser fabrication. A 10μm stripe single quantum well (SQW) graded-index separation confinement heterostructure (GRINSCH) laser made in this way has achieved high performance with high quantum differential efficiency, low threshold current and good electrical isolation characteristics. MeV oxygen ion implantation with optimum thermal annealing produces a deep buried electrical isolation layer in n-type GaAs and reduces optical absorption in GaAs/AlGaAs quantum well structures. Ion implantation stimulated compositional disordering as well as implanted oxygen-related deep level traps may be considered as important effects for electrical and optical modification of interfaces in GaAs and AlGaAs.

Proceedings ArticleDOI
03 May 1988
TL;DR: In this paper, the authors describe some of these materials on the basis of their nonlinear optical response, such as passive phase conjugate mirrors, image subtractors, optical limiters and thresholders.
Abstract: Photorefractive materials have been used as the nonlinear optical media in various optical computing and image processing applications. Devices such as passive phase conjugate mirrors, image subtractors, optical limiters and thresholders can be constructed with materials whose index of refraction is a function of light intensity. It is the purpose of this paper, then to describe some of these materials on the basis of their nonlinear optical response.