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Amnon Yariv
Researcher at California Institute of Technology
Publications - 1084
Citations - 56928
Amnon Yariv is an academic researcher from California Institute of Technology. The author has contributed to research in topics: Laser & Semiconductor laser theory. The author has an hindex of 103, co-authored 1082 publications receiving 55256 citations. Previous affiliations of Amnon Yariv include University of California, Santa Barbara & Watkins-Johnson Company.
Papers
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Integration of a multimode interference coupler with a corrugated sidewall Bragg grating in planar polymer waveguides
Lin Zhu,Yanyi Huang,Amnon Yariv +2 more
TL;DR: In this article, the authors demonstrate the integration of a 3-dB multimode interference coupler with a corrugated sidewall Bragg grating in planar polymer waveguides by direct electron beam writing.
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On the high power limit of the laser linewidth
Amnon Yariv,Kerry J. Vahala +1 more
TL;DR: In this paper, the quantum limit of the laser linewidth is shown to imply a residual Constant Linewidth rather than obeying an inverse power dependence as is usually assumed.
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Narrow-Linewidth Oxide-Confined Heterogeneously Integrated Si/III–V Semiconductor Lasers
Huolei Wang,Dongwan Kim,Mark Harfouche,Christos T. Santis,Naresh Satyan,George Rakuljic,Amnon Yariv +6 more
TL;DR: In this paper, a narrow-linewidth heterogeneously integrated Si/III-V laser is presented, where the current confinement in the III-V structure is obtained by oxide isolation rather than by the prevailing ion-implantation technique.
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Demonstration of down-chirped and chirp-free pulses from high-repetition-rate passively mode-locked lasers
Randal A. Salvatore,Amnon Yariv +1 more
TL;DR: In this paper, the sign and magnitude of chirp in high-repetition-rate mode-locked semiconductor lasers are measured in the frequency domain, using filtering and cross-correlation techniques.
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Optically controlled resonant tunneling in a double‐barrier diode
TL;DR: In this paper, the effect of the lateral current confinement on the currentvoltage characteristic of a double-barrier resonant tunneling structure was also studied, and the experimental results were explained by solving the electrostatic potential distribution in the structure using a simple three-layer model.