There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

/pdf/a-comprehensive-review-of-zno-materials-and-devices-21a3zjadem.pdf

A comprehensive review of zno materials and devices

Spread Spectrum It’s not just for breakfast anymore! Don't blame me, the title is the work of this month's guest columnist, Steve Bible, N7HPR (n7hpr@tapr.org). While cruising the net recently, I noticed a sudden bump in the number of times Spread Spectrum (SS) techniques were mentioned in the amateur digital areas. While QEX has discussed SS in the past, we haven't touched on it in this forum. Steve was a frequent cogent contributor, so I asked him to give us some background. Steve enlisted in the Navy in 1977 and became a Data Systems Technician, a repairman of shipboard computer systems. In 1985 he was accepted into the Navy’s Enlisted Commissioning Program and attended the University of Utah where he studied computer science. Upon graduation in 1988 he was commissioned an Ensign and entered Nuclear Power School. His subsequent assignment was onboard the USS Georgia, a trident submarine stationed in Bangor, Washington. Today Steve is a Lieutenant and he is completing a master’s degree in computer science at the Naval Postgraduate School in Monterey, California. His areas of interest are digital communications, amateur satellites, VHF/UHF contesting, and QRP. His research area closely follows his interest in amateur radio. His thesis topic is Multihop Packet Radio Routing Protocol Using Dynamic Power Control. Steve is also the AMSAT Area Coordinator for the Monterey Bay area. Here's Steve, I'll have some additional comments at the end.

http://ieeexplore.ieee.org/iel5/5/31355/01457623.pdf

Digital communications

Fundamentals of Plasmonics.- Electromagnetics of Metals.- Surface Plasmon Polaritons at Metal / Insulator Interfaces.- Excitation of Surface Plasmon Polaritons at Planar Interfaces.- Imaging Surface Plasmon Polariton Propagation.- Localized Surface Plasmons.- Electromagnetic Surface Modes at Low Frequencies.- Applications.- Plasmon Waveguides.- Transmission of Radiation Through Apertures and Films.- Enhancement of Emissive Processes and Nonlinearities.- Spectroscopy and Sensing.- Metamaterials and Imaging with Surface Plasmon Polaritons.- Concluding Remarks.

/pdf/plasmonics-fundamentals-and-applications-4syb9877sr.pdf

Plasmonics: Fundamentals and Applications

We formulated an analytical model and analyzed the modification of spontaneous emission in Bragg onion resonators. We consider both the case of a single light emitter and a uniformly distributed ensemble of light emitters within the resonator. We obtain an expression for the average radiation rate of the light emitters ensemble and discuss the modification of the average radiation rate as a function of cavity parameters such as the core radius, the number of Bragg cladding layers, the index contrast of the Bragg cladding, and the refractive index of surrounding medium. We also consider the possibility of non-exponential decay of the light emitter ensemble due to the strong dependence of spontaneous emission on the location and polarization of individual light emitter. We conclude that Bragg onion resonators can both enhance and inhibit spontaneous emission by several orders of magnitude. This property can have significant impact in the field of cavity quantum electrodynamics (QED).

https://authors.library.caltech.edu/4208/1/liaoe06.pdf

Modification of spontaneous emission in Bragg onion resonators

Mutual phase locking has been achieved through series connection of a semiconductor laser and a Gunn diode oscillator. Experimental results obtained demonstrate a mutual interaction between the two oscillators which results in a short term Gunn diode oscillator stability and improved spectral purity of its output. We also observe a narrowing of laser pulses and an improvement in regularity.

/pdf/mutual-phase-locking-of-a-coupled-laser-diode-gunn-diode-2ihbcl9zg0.pdf

Mutual phase locking of a coupled laser diode‐Gunn diode pair

We report laser oscillation at 80–100°K in electrically pumped GaAs[Single Bond]Ga1–xAlxAs double-heterostructure distributed-feedback diode lasers. The feedback for laser oscillation was provided by a corrugated interface between the active GaAs layer and the p-Ga1–xAlxAs layer. The lowest threshold current density was 2.5 kA/cm^2 in pulsed operation. The wavelength of laser emission was 8112 A at 82°K with a half-width of less than 0.3 A. The temperature dependence of the laser wavelength was found to be smaller than that of the conventional Fabry-Perot laser.

GaAs[Single Bond]Ga1–xAlxAs double-heterostructure distributed-feedback diode lasers

In the course of electroluminescence studies of GaAs junctions we investigated the emission spectra of sulfur-doped zinc-diffused diodes. The peaks in the spectra correspond to three main transitions and their associated phonon emission satellites.

/pdf/phonon-assisted-and-phonon-free-radiative-transitions-in-15iszjpuwh.pdf

PHONON‐ASSISTED AND PHONON‐FREE RADIATIVE TRANSITIONS IN SULFUR‐DOPED GaAs DIFFUSED JUNCTIONS

A median circuit operates over a single-clock-cycle to determine the median of the group Each value is compared with a plurality of other values One of those other values become the eventual median The possible median which is closest to all of the elements being compared is taken as the overall closest value and established as the median Most specifically, this is done by applying the higher voltage of the pair to one end of a capacitor at the same time as a precharge After the precharge is complete, the lower voltage of the pair is applied to the capacitor The capacitor acts as a charge pump, lowering its other end by an amount proportional to the distance between the higher voltage of the pair and the lower voltage of the pair A plurality of the capacitors are connected together, so that the output from the group of cells represents the average capacitors among all elements The highest group represents the eventual median

Amnon Yariv

Papers

Modification of spontaneous emission in Bragg onion resonators

Mutual phase locking of a coupled laser diode‐Gunn diode pair

GaAs[Single Bond]Ga1–xAlxAs double-heterostructure distributed-feedback diode lasers

PHONON‐ASSISTED AND PHONON‐FREE RADIATIVE TRANSITIONS IN SULFUR‐DOPED GaAs DIFFUSED JUNCTIONS

Single clock cycle two-dimensional median filter