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Amnon Yariv
Researcher at California Institute of Technology
Publications - 1084
Citations - 56928
Amnon Yariv is an academic researcher from California Institute of Technology. The author has contributed to research in topics: Laser & Semiconductor laser theory. The author has an hindex of 103, co-authored 1082 publications receiving 55256 citations. Previous affiliations of Amnon Yariv include University of California, Santa Barbara & Watkins-Johnson Company.
Papers
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Proceedings Article
First demonstration of air-silica Bragg fiber
Guillaume Vienne,Yong Xu,Christian Jakobsen,Hans-Jürgen Deyerl,T.P. Hansen,B.H. Larsen,Jesper Bevensee Jensen,Thorkild Sørensen,M. Terrel,Yanyi Huang,Reginald K. Lee,Niels Asger Mortensen,Jes Broeng,H.R. Simonsen,Anders Overgaard Bjarklev,Amnon Yariv +15 more
TL;DR: In this article, the TE/sub 01/mode was observed for the first time to our knowledge in air-silica Bragg fibers, and it could transmit light by bandgap guiding over 50 m.
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Direct modulation of semiconductor lasers at f>10 GHz by low‐temperature operation
TL;DR: In this article, a 175μm-long buriedheterostructure laser fabricated on a semi-insulating substrate operating at −50°C was used to achieve a direct amplitude modulation bandwidth in excess of 10 GHz.
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Coherent Power Combination of Semiconductor Lasers Using Optical Phase-Lock Loops
TL;DR: In this article, the authors demonstrate the coherent power combination of various high-power semiconductor lasers using OPLLs in both the filled-aperture and tiled-approach configurations.
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GaAs‐GaAlAs injection lasers on semi‐insulating substrates using laterally diffused junctions
TL;DR: In this paper, low threshold GaAs-GaAlAs laser operating in a stable single mode has been fabricated using laterally diffused junctions and can be integrated with other components.
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High efficiency single quantum well graded‐index separate‐confinement heterostructure lasers fabricated with MeV oxygen ion implantation
TL;DR: In this paper, single quantum well AlGaAs/GaAs graded-index separate-confinement heterostructure lasers have been fabricated using MeV oxygen ion implantation plus optimized subsequent thermal annealing.