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Amnon Yariv
Researcher at California Institute of Technology
Publications - 1084
Citations - 56928
Amnon Yariv is an academic researcher from California Institute of Technology. The author has contributed to research in topics: Laser & Semiconductor laser theory. The author has an hindex of 103, co-authored 1082 publications receiving 55256 citations. Previous affiliations of Amnon Yariv include University of California, Santa Barbara & Watkins-Johnson Company.
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Phase-locking and coherent power combining of broadband linearly chirped optical waves.
TL;DR: The results of this work enable coherent power combining of high-power fiber amplifiers-where a rapidly chirping seed laser reduces stimulated Brillouin scattering-and electronic beam steering of chirped optical waves.
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Longitudinal mode spectrum of semiconductor lasers under high-speed modulation
TL;DR: In this article, it was shown that the spectrum of a single-mode semiconductor laser under continuous microwave modulation is locked to a single longitudinal mode for optical modulation depths up to ∼ 80 percent, beyond which the spectrum breaks into multimode oscillation.
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Self-induced frequency scanning and distributed Bragg reflection in semiconductor lasers with phase-conjugate feedback.
Mark Cronin-Golomb,Amnon Yariv +1 more
TL;DR: A GaAlAs semiconductor laser with feedback from a barium titanate photorefractive ring passive phase-conjugate mirror can be made to perform repeating or nonrepeating frequency scans over a 10-nm range toward either the blue or the red.
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Phase-locking characteristics of coupled ridge-waveguide InP/InGaAsP diode lasers
TL;DR: In this article, the phase locking characteristics of two coupled, ridge waveguide InP/InGaAsP diode lasers emitting at 1.2 μm were investigated experimentally by the observation of phase-locked modes (supermodes) in the near fields and distinct diffraction patterns in the far field.
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Reduction of the spectral linewidth of semiconductor lasers with quantum wire effects—Spectral properties of GaAlAs double heterostructure lasers in high magnetic fields
TL;DR: In this paper, the spectral linewidth of a GaAlAs double heterostructure laser placed in a high magnetic field was measured at 190 K. This reduction is believed to result mainly from the reduction of the enhancement factor alpha due to a quasi-one-dimensional electronic system formed by the high magnetic fields.