Amnon Yariv

Bio: Amnon Yariv is an academic researcher from California Institute of Technology. The author has contributed to research in topics: Laser & Semiconductor laser theory. The author has an hindex of 103, co-authored 1082 publications receiving 55256 citations. Previous affiliations of Amnon Yariv include University of California, Santa Barbara & Watkins-Johnson Company.

Arbitrary Optical Waveform Generation Utilizing Optical Phase-Locked Loops

Abstract: This invention relates to opto-electronic systems using semiconductor lasers driven by optical phase-locked loops that control the laser's optical phase and frequency. Feedback control provides a means for precise, wideband control of optical frequency and phase, augmented further by four wave mixing stages and digitally stitched independent optical waveforms for enhanced tunability.

Annular Bragg defect mode resonators

Abstract: We propose and analyze a new type of resonator in an annular geometry which is based on a single defect surrounded by radial Bragg reflectors on both sides. Unlike conventional, total internal reflection based ring resonators, this structure supports modal fields with very low azimuthal number (large radial k-vector component). We show that the conditions for efficient mode confinement are different from those of conventional Bragg waveguiding in a rectangular geometry. To realize tight confinement of the light in the defect, chirped gratings are required. Compared to a conventional resonator, the new resonator exhibits larger FSR and lower losses making it suitable for both telecom and sensing applications. In addition, the resonance wavelength and Q factor of the device are very sensitive to environmental changes, and thus provide ideal observables for sensing applications. Annular Bragg resonators with several unique geometries have been fabricated in an InGaAsP multi-quantum-well membrane. The spectral properties of the resonators have been investigated through analysis of photoluminescence induced by pulsed optical excitation.

Electrical properties of InAs epilayers grown by molecular beam epitaxy on Si substrates

Abstract: InAs epitaxial films have been grown by molecular beam epitaxy on high‐resistivity Si (20 Ω cm) substrates for the first time, and transport properties were investigated by Hall effect measurements down to 10 K. The electron mobilities peak at 75 K with a value of 4.5×104 cm2/(V s) in 6.7‐μm‐thick (n=2.6×1015 cm−3 ) unintentionally doped layers. It is shown that the temperature dependence of the Hall mobility can be explained by a combined ionized impurity‐polar optical phonon scattering model in the thin InAs layers. Despite the existence of a large lattice mismatch, the results are indicative of a high quality material.

Snake beam: a paraxial arbitrary focal line.

Abstract: The creation of paraxial arbitrary focal lines by a Fourier computer-generated hologram is demonstrated. The desired focal line is represented by a series of connected straight line segments, each of which is implemented by a radial harmonic function located on a different radial portion of the entire hologram. Each subhologram is multiplied by appropriate linear and quadratic phase functions and is shifted by some distance from the center. The two phase factors determine the location of each line segment, while the in-plane shift determines the tilt angle of the segment.

Coupling mechanism of gain-guided integrated semiconductor laser arrays

Abstract: It is shown that a gain-guided laser array couples via propagating fields rather than the evanescent mode coupling typically responsible for directional coupling in passive (directional couplers) and active (laser array) devices. We show that these phase-locked modes exhibit an interference pattern, in the junction plane, which arises from the curvature of the phase fronts of optical fields of the interacting lasers. The experimental results are interpreted with the aid of a simple theoretical model, and the effect of the observed mode pattern on the coupling of gain-guided lasers is discussed.

I and i

Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality. Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

A comprehensive review of zno materials and devices

Abstract: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

Digital communications

Abstract: Spread Spectrum It’s not just for breakfast anymore! Don't blame me, the title is the work of this month's guest columnist, Steve Bible, N7HPR (n7hpr@tapr.org). While cruising the net recently, I noticed a sudden bump in the number of times Spread Spectrum (SS) techniques were mentioned in the amateur digital areas. While QEX has discussed SS in the past, we haven't touched on it in this forum. Steve was a frequent cogent contributor, so I asked him to give us some background. Steve enlisted in the Navy in 1977 and became a Data Systems Technician, a repairman of shipboard computer systems. In 1985 he was accepted into the Navy’s Enlisted Commissioning Program and attended the University of Utah where he studied computer science. Upon graduation in 1988 he was commissioned an Ensign and entered Nuclear Power School. His subsequent assignment was onboard the USS Georgia, a trident submarine stationed in Bangor, Washington. Today Steve is a Lieutenant and he is completing a master’s degree in computer science at the Naval Postgraduate School in Monterey, California. His areas of interest are digital communications, amateur satellites, VHF/UHF contesting, and QRP. His research area closely follows his interest in amateur radio. His thesis topic is Multihop Packet Radio Routing Protocol Using Dynamic Power Control. Steve is also the AMSAT Area Coordinator for the Monterey Bay area. Here's Steve, I'll have some additional comments at the end.

Plasmonics: Fundamentals and Applications

Abstract: Fundamentals of Plasmonics.- Electromagnetics of Metals.- Surface Plasmon Polaritons at Metal / Insulator Interfaces.- Excitation of Surface Plasmon Polaritons at Planar Interfaces.- Imaging Surface Plasmon Polariton Propagation.- Localized Surface Plasmons.- Electromagnetic Surface Modes at Low Frequencies.- Applications.- Plasmon Waveguides.- Transmission of Radiation Through Apertures and Films.- Enhancement of Emissive Processes and Nonlinearities.- Spectroscopy and Sensing.- Metamaterials and Imaging with Surface Plasmon Polaritons.- Concluding Remarks.