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Author

Anati Syahira Hedzir

Bio: Anati Syahira Hedzir is an academic researcher from International Islamic University, Islamabad. The author has contributed to research in topics: CMOS sensor & CMOS. The author has an hindex of 1, co-authored 1 publications receiving 3 citations.
Topics: CMOS sensor, CMOS

Papers
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Journal ArticleDOI
TL;DR: 4T CMOS APS shown more radiation hardness than the 3T CMos APS and 32 nm technology exhibits lowest radiation-tolerant, indicating 4T has a higher radiation hardness.
Abstract: The widely used CMOS Active Pixel Sensors (APS) in space imaging mission are vulnerable to radiations known as Single Event Transient (SET). This paper focus on 3T and 4T CMOS APS with tech...

3 citations


Cited by
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Book ChapterDOI
01 Jan 2004
TL;DR: In Chapter 11, some current and future challenges in each of these areas of equating, scaling, and linking are focused on.
Abstract: In Chapter 1, we summarized the concepts of equating, scaling, and linking In subsequent chapters, these concepts were further developed and elaborated. In Chapter 11 we focus on some current and future challenges in each of these areas.

79 citations

11 Jul 2016
TL;DR: In this article, the effect of coulomb and nuclear interactions on the radiation-induced dark current distribution and to identify the main radiationinduced defects responsible for the dark current increase for each type of interaction were investigated.
Abstract: The dark current spectroscopy is tested on twenty CMOS image sensors irradiated with protons, neutrons and various ions at different energies. The aim of this work is to differentiate the effect of coulomb and nuclear interactions on the radiation-induced dark current distribution and to identify the main radiation-induced defects responsible for the dark current increase for each type of interaction. For low-energy protons and low-energy light ions (which produce well-separated low energy coulomb interactions), we find that most of the pixels belong to a quantized dark current spectrum at low dark current. In these pixels, the dark current increase seems mainly dominated by specific point defects such as the divacancy and the vacancy-phosphorus complex. Thus, these simple defects seem to form when the displacement damage is rather low and sparse. On the contrary, for nuclear interactions (with neutrons or high-energy protons) producing high coulomb NIEL silicon PKAs or for low energy heavy ions (also having high coulomb NIEL), the DCS spectrum is not visible and all the pixels belong to an exponential hot pixel tail which extends to very high dark current. In these pixels, the dark current increase is mainly dominated by defects with close-to-midgap energy levels. These defects seem more complex than point defects because they can have many different generation rates (explaining the smooth hot pixel tail) and because they tend to form when the displacement damage is high and dense.

2 citations

Journal ArticleDOI
TL;DR: In this article, a carbon nanotube field effect transistor (CNTFET) based single event upset (SEU) tolerant latch is proposed, which can tolerate the effect of particle strike at any of...
Abstract: In this paper, a carbon nanotube field effect transistor (CNTFET) based single event upset (SEU) tolerant latch is proposed. The proposed latch can tolerate the effect of particle strike at any of ...