Andras Kis

Bio: Andras Kis is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Monolayer & Semiconductor. The author has an hindex of 67, co-authored 165 publications receiving 53990 citations. Previous affiliations of Andras Kis include École Normale Supérieure & Lawrence Berkeley National Laboratory.

Large-area MoS2 grown using H2S as the sulphur source

Abstract: We report on the growth of molybdenum disulphide (MoS2) using H2S as a gas-phase sulfur precursor that allows controlling the domain growth direction of domains in both vertical (perpendicular to the substrate plane) and horizontal (within the substrate plane), depending on the H2S:H2 ratio in the reaction gas mixture and temperature at which they are introduced during growth. Optical and atomic force microscopy measurements on horizontal MoS2 demonstrate the formation of monolayer triangular-shape domains that merge into a continuous film. Scanning transmission electron microscopy of monolayer MoS2 shows a regular atomic structure with a hexagonal symmetry. Raman and photoluminescence spectra confirm the monolayer thickness of the material. Field-effect transistors fabricated on MoS2 domains that are transferred onto Si/SiO2 substrates show a mobility similar to previously reported exfoliated and chemical vapor deposition-grown materials.

ssDNA binding reveals the atomic structure of graphene.

Abstract: We used AFM to investigate the interaction of polyelectrolytes such as ssDNA and dsDNA molecules with graphene as a substrate. Graphene is an appropriate substrate due to its planarity, relatively large surfaces that are detectable via an optical microscope, and straightforward identification of the number of layers. We observe that in the absence of the screening ions deposited ssDNA will bind only to the graphene and not to the SiO2 substrate, confirming that the binding energy is mainly due to the π−π stacking interaction. Furthermore, deposited ssDNA will map the graphene underlying structure. We also quantify the π−π stacking interaction by correlating the amount of deposited DNA with the graphene layer thickness. Our findings agree with reported electrostatic force microscopy (EFM) measurements. Finally, we inspected the suitability of using a graphene as a substrate for DNA origami-based nanostructures.

Thickness-dependent mobility in two-dimensional MoS₂ transistors.

Abstract: Two-dimensional (2D) semiconductors such as mono and few-layer molybdenum disulphide (MoS2) are very promising for integration in future electronics as they represent the ultimate miniaturization limit in the vertical direction. While monolayer MoS2 attracted considerable attention due to its broken inversion symmetry, spin/valley coupling and the presence of a direct band gap, few-layer MoS2 remains a viable option for technological application where its higher mobility and lower contact resistance are believed to offer an advantage. However, it remains unclear whether multilayers are intrinsically superior or if they are less affected by environmental effects. Here, we report the first systematic comparison of the field-effect mobilities in mono-, bi- and trilayer MoS2 transistors after thorough in situ annealing in vacuum. We show that the mobility of field-effect transistors (FETs) based on monolayer MoS2 is significantly higher than that of FETs based on two or three layers. We demonstrate that it is important to remove the influence of gaseous adsorbates and water before comparing mobilities, as monolayers exhibit the highest sensitivity to ambient air exposure. In addition, we study the influence of the substrate roughness and show that this parameter does not affect FET mobilities.

Buckling and kinking force measurements on individual multiwalled carbon nanotubes

Abstract: Using an atomic force microscope operated inside a transmission electron microscope, we have studied the forces involved in buckling and kinking an individual multiwalled carbon nanotube while observing its structure. In particular, we have measured an individual nanotube's asymptotic critical buckling load and critical kinking load. The buckling results are well described by classical elastic theory, while the observed kinking behavior requires a more involved analysis. Repeated buckling measurements on the same nanotube indicate an extremely high degree of elasticity and set a lower bound on the nanotube's yield strength of $1.7\phantom{\rule{0.3em}{0ex}}\mathrm{GPa}$, higher than the yield strength of steel. Plastic deformation of the nanotube was eventually observed following kinking.

Magnetoexcitons in large area CVD-grown monolayer MoS 2 and MoSe 2 on sapphire

Abstract: Magnetotransmission spectroscopy was employed to study the valley Zeeman effect in large area monolayer MoS2 and MoSe2. The extracted values of the valley g factors for both A and B excitons were found to be similar with g(v) similar or equal to -4.5. The samples are expected to be strained due to the CVD growth on sapphire at high temperature (700 degrees C). However, the estimated strain, which is maximum at low temperature, is only similar or equal to 0.2%. Theoretical considerations suggest that the strain is too small to significantly influence the electronic properties. This is confirmed by the measured value of the valley g factor, and the measured temperature dependence of the band gap, which are almost identical for CVD and mechanically exfoliated MoS2.

Fast parallel algorithms for short-range molecular dynamics

Abstract: Three parallel algorithms for classical molecular dynamics are presented. The first assigns each processor a fixed subset of atoms; the second assigns each a fixed subset of inter-atomic forces to compute; the third assigns each a fixed spatial region. The algorithms are suitable for molecular dynamics models which can be difficult to parallelize efficiently—those with short-range forces where the neighbors of each atom change rapidly. They can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors. The algorithms are tested on a standard Lennard-Jones benchmark problem for system sizes ranging from 500 to 100,000,000 atoms on several parallel supercomputers--the nCUBE 2, Intel iPSC/860 and Paragon, and Cray T3D. Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems. For large problems, the spatial algorithm achieves parallel efficiencies of 90% and a 1840-node Intel Paragon performs up to 165 faster than a single Cray C9O processor. Trade-offs between the three algorithms and guidelines for adapting them to more complex molecular dynamics simulations are also discussed.

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

Abstract: Single-layer metal dichalcogenides are two-dimensional semiconductors that present strong potential for electronic and sensing applications complementary to that of graphene.