Andras Kis

Bio: Andras Kis is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Monolayer & Semiconductor. The author has an hindex of 67, co-authored 165 publications receiving 53990 citations. Previous affiliations of Andras Kis include École Normale Supérieure & Lawrence Berkeley National Laboratory.

Superconducting 2D NbS2 Grown Epitaxially by Chemical Vapor Deposition.

Abstract: Metallic two-dimensional (2D) transition metal dichalcogenides (TMDCs) are attracting great attention because of their interesting low-temperature properties such as superconductivity, magnetism, a...

1 Nonvolatile Memory Cells Based on 2 MoS 2 /Graphene Heterostructures

Abstract: Memory cells are an important building block of digital electronics. We combine here the unique electronic properties of semiconducting monolayer MoS2 with the high conductivity of graphene to build a 2D heterostructure capable of information storage. MoS2 acts as a channel in an intimate contact with graphene electrodes in a field-effect transistor geometry. Our prototypical all-2D transistor is further integrated with a multilayer graphene charge trappinglayerintoadevicethatcanbeoperatedasanonvolatilememorycell.Becauseofitsbandgapand2Dnature,monolayerMoS2ishighlysensitiveto the presence of charges in the charge trapping layer, resulting in a factor of 10 4 difference between memory program and erase states. The two

Electro-optical modulator based on a layered semiconductor crystal structure

Abstract: An electro-optical modulator has a mono or multi-layered film of 2-dimensional semiconducting material (2D SC) having a layered crystal structure, 101, with electrodes, 102, formed at each side of the semiconducting material. The application of electrical potential to the electrodes and across the two-dimensional semiconducting material modulates the transmittance of light of certain wavelengths as a function of the voltage. The 2-dimensional semi-conducting material consist of a transition metal dichalcogenide, TMDC, (such MoS2, Molybdenum disulfide, MoSe2, Molybdenum diselenide, MoTe2, Molybdenum ditelluride, WS2,Tungsten (IV) sulphide, WSe2, Tungsten (IV) diselenide, WTe2, Tungsten (IV) ditelluride, ZrS2, Zirconium disulphide, HfS2, Hafnium disulphide or TiS2, Titanium disulphide), a transition metal trichalcogenide (such as TiS3, Titanium trisulphide), silicince germanene, black phosphorus, III-VI compounds (such as GaS, Gallium sulphide) or perovskites. One or more modulator may be incorporated into integrated photonic circuits and optical devices. Also disclosed is a method of manufacturing the electro-optical modulator of the invention.

Stable Al2O3 Encapsulation of MoS2‐FETs Enabled by CVD Grown h‐BN

Abstract: Molybdenum disulfide (MoS2) has great potential as a two‐dimensional semiconductor for electronic and optoelectronic application, but its high sensitivity to environmental adsorbents and charge transfer from neighboring dielectrics can lead to device variability and instability. Aluminum oxide (Al2O3) is widely used as an encapsulation layer in (opto)‐electronics, but it leads to detrimental charge transfer n‐doping to MoS2. Here, this work reports a scalable encapsulation approach for MoS2 field‐effect transistors (FETs) where hexagonal boron nitride (h‐BN) monolayers are employed as a barrier layer in‐between each of the Al2O3 and MoS2 interfaces. These devices exhibit a significant reduction of charge transfer, when compared to structures without h‐BN. This benefit of h‐BN in the gate stack is confirmed by ab initio density functional theory calculations. In addition, the devices with h‐BN layers show very low hysteresis even under ambient operating conditions.

Fast parallel algorithms for short-range molecular dynamics

Abstract: Three parallel algorithms for classical molecular dynamics are presented. The first assigns each processor a fixed subset of atoms; the second assigns each a fixed subset of inter-atomic forces to compute; the third assigns each a fixed spatial region. The algorithms are suitable for molecular dynamics models which can be difficult to parallelize efficiently—those with short-range forces where the neighbors of each atom change rapidly. They can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors. The algorithms are tested on a standard Lennard-Jones benchmark problem for system sizes ranging from 500 to 100,000,000 atoms on several parallel supercomputers--the nCUBE 2, Intel iPSC/860 and Paragon, and Cray T3D. Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems. For large problems, the spatial algorithm achieves parallel efficiencies of 90% and a 1840-node Intel Paragon performs up to 165 faster than a single Cray C9O processor. Trade-offs between the three algorithms and guidelines for adapting them to more complex molecular dynamics simulations are also discussed.

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

Abstract: Single-layer metal dichalcogenides are two-dimensional semiconductors that present strong potential for electronic and sensing applications complementary to that of graphene.